Zerocrossingpredictionbased Singleslope Adc With A Constant Charge Bias Amplifier For Low Power Image Sensors

• doi: 10.1109/ISCAS48785.2022.9937251
• title: Zero-crossing-prediction-based Single-slope ADC with a Constant Charge Bias Amplifier for Low Power Image Sensors
• publisher: IEEE
• isbn: 978-1-6654-8486-2
• issn: 0271-4302
• rank: 4030
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper presents a single-slope analog-to-digital converter (SS-ADC) with a proposed zero-crossing (ZC)-prediction-based power-gating technique for low-power complementary metal-oxide-semiconductor (CMOS) image sensor applications. The proposed ZC prediction utilizes the DC gain difference between the preamplifier and main comparator in the SS-ADC without an additional ramp signal. For a consistent prediction with a low power operation, the constant charge bias amplifier (CQBA) is implemented as a preamplifier, which exhibits input level independent output common mode and gain response. The proposed SS-ADC is demonstrated for a 110-nm CMOS image sensor process, assuming a $640\times 480$ image resolution, a 10-bit ADC resolution, and 120 frames/s. The simulation results show that the CQBA output common mode and gain response only vary by 1% and 6.4%, respectively. Furthermore, the overall power consumption of the sensor is reduced by about 80% compared with the static comparator by the prediction-based power-gating, achieving high energy efficiency (51. 5 pJ/pixel of the Figure of merit).
• article_number: 9937251
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9937251
• html_url: https://ieeexplore.ieee.org/document/9937251/
• abstract_url: https://ieeexplore.ieee.org/document/9937251/
• publication_title: 2022 IEEE International Symposium on Circuits and Systems (ISCAS)
• conference_location: Austin, TX, USA
• conference_dates: 27 May-1 June 2022
• publication_number: 9937201
• is_number: 9937203
• publication_year: 2022
• publication_date: 27 May-1 June 2022
• start_page: 2787
• end_page: 2791
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 675
• insert_date: 20221111
• index_terms:
  • ieee_terms:
    • Power demand
    • Image resolution
    • Simulation
    • Heuristic algorithms
    • Energy resolution
    • CMOS image sensors
    • Prediction algorithms
  • author_terms:
    • Single-slope ADC
    • Zero-crossing prediction
    • Constant charge bias amplifier
    • Power gating
    • Image sensor
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Constant Bias
    • Constant Biases
    • Low Power Images
    • Energy Efficiency
    • Power Consumption
    • Common Mode
    • Low-power Operation
    • Output Gain
    • Current Source
    • Current Regulations
    • Current Flow
    • Dynamic Performance
    • Dynamic Operation
    • Input Voltage
    • Settling Time
    • Colonial Times
    • Target Information
    • Supply Voltage
    • Input Range
    • Conversion Time
    • Total Power Consumption
    • Gain Variation
    • Zero-crossing Point
    • Constant Gain
    • Readout Circuit
    • Prediction Window
    • Common-mode Voltage
    • Weak Inverse
    • Weak Inversion
    • Charge Flow
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-6654-8486-2, isbnType: New-2005
  • format: USB ISBN, value: 978-1-6654-8484-8, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-6654-8485-5, isbnType: New-2005
• authors:
  • Author Name: Keunyeol Park
    Affiliation: Department of Semiconductor Science, Dongguk University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/37085992237
    ID: 37085992237
    Order: 1
    Author Affiliations:
    • Department of Semiconductor Science, Dongguk University, Seoul, Korea
  • Author Name: Hohyeon Lee
    Affiliation: Department of Semiconductor Science, Dongguk University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/37088852070
    ID: 37088852070
    Order: 2
    Author Affiliations:
    • Department of Semiconductor Science, Dongguk University, Seoul, Korea
  • Author Name: Soo Youn Kim
    Affiliation: Department of Semiconductor Science, Dongguk University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/37859344600
    ID: 37859344600
    Order: 3
    Author Affiliations:
    • Department of Semiconductor Science, Dongguk University, Seoul, Korea

Image Sensor

• sensor_type: CMOS
• resolution: 640×480
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 120 fps
• power_consumption: 1.9 mW

Applications & Benefits

• cell_imaging: Used in mobile applications, internet of things, augmented reality.
• benefits: Low power operation, high energy efficiency (51.5 pJ/pixel), good linearity performance.

Supporting Organizations

• supported_by: Samsung Electronics Co., Ltd., MSIT (Ministry of Science and ICT), Korea, IITP (Institute for Information & communications Technology Promotion)

Manuscript Details

• publication_date: 27 May-1 June 2022

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

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