Xray Radiation Effect On Cmos Imagers With Inpixel Buriedchannel Source Follower

• doi: 10.1109/ESSDERC.2011.6044211
• title: X-ray radiation effect on CMOS imagers with in-pixel buried-channel source follower
• publisher: IEEE
• isbn: 978-1-4577-0706-3
• issn: 1930-8876
• partnum: 11EX5535
• rank: 4026
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper presents a CMOS image sensor (CIS) with pinned-photodiode 5T active pixels which use an in-pixel buried channel source follower (BSF) with an optimized row selector (RS). According to our previous work [1][2], using in-pixel BSFs with optimized RS can achieve significant pixel dark random noise reduction, i.e. 50% reduction, specially for random telegraph signal (RTS) noise, and an increase of the pixel output swing and dynamic range. With significant dark random noise reduction, in order to evaluate the performance for perspective space or medical imaging application, this proposed pixel structure using 0.18μm CMOS image sensor process is also further characterized under X-ray radiation. The results show that although X-ray radiation induced additional acceptor-like interface traps will increase dark random noise, the BSF pixels are able to constrain the dark random noise increase after X-ray radiation.
• article_number: 6044211
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6044211
• html_url: https://ieeexplore.ieee.org/document/6044211/
• abstract_url: https://ieeexplore.ieee.org/document/6044211/
• publication_title: 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
• conference_location: Helsinki, Finland
• conference_dates: 12-16 Sept. 2011
• publication_number: 6034694
• is_number: 6044153
• publication_year: 2011
• publication_date: 12-16 Sept. 2011
• start_page: 155
• end_page: 158
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 376
• insert_date: 20111013
• index_terms:
  • ieee_terms:
    • Noise
    • Logic gates
    • Current measurement
    • CMOS image sensors
    • MOSFETs
    • Photonics
  • dynamic_index_terms:
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
    • X-ray Irradiation
    • X-ray Radiation
    • Random Noise
    • Channel Noise
    • Increase In Noise
    • Medical Imaging Applications
    • Dark Noise
    • Interface Trap
    • Output Pixel
    • Radiation Exposure
    • Quantum Efficiency
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Gate Electrode
    • Gate Bias
    • CMOS Process
    • Average Noise
    • Node Voltage
• isbn_formats:
  • format: Online ISBN, value: 978-1-4577-0706-3, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4577-0707-0, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4577-0708-7, isbnType: New-2005
• authors:
  • Author Name: Yue Chen
    Affiliation: Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37900416600
    ID: 37900416600
    Order: 1
    Author Affiliations:
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
  • Author Name: Jiaming Tan
    Affiliation: Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37592981800
    ID: 37592981800
    Order: 2
    Author Affiliations:
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
  • Author Name: Xinyang Wang
    Affiliation: CMOSIS nv, Antwerp, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37293620200
    ID: 37293620200
    Order: 3
    Author Affiliations:
    • CMOSIS nv, Antwerp, Belgium
  • Author Name: Adri J. Mierop
    Affiliation: Teledyne DALSA B.V., Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37294018800
    ID: 37294018800
    Order: 4
    Author Affiliations:
    • Teledyne DALSA B.V., Eindhoven, Netherlands
  • Author Name: Albert J. P. Theuwissen
    Affiliation: Harvest Imaging, Bree, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 5
    Author Affiliations:
    • Harvest Imaging, Bree, Belgium
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands

Image Sensor

• sensor_type: CMOS image sensor (CIS)
• resolution: 200 rows x 150 columns with 10 μm pixel pitches
• dynamic_range: approximately 100% improvement in output swing (exact value not provided)
• pixel_size: 10 µm
• dark_current: Not provided in the text.

Optical Data

• focal_length: Not provided in the text.
• aperture: Not provided in the text.
• field_of_view: Not provided in the text.
• distortion: Not provided in the text.

Performance Metrics

• frame_rate: 17 fps
• signal_to_noise_ratio: 41.6 dB at saturation
• sensitivity: Not provided in the text.
• shutter_speed: Not provided in the text.
• power_consumption: Not provided in the text.
• noise: Average dark random noise increased from 270 μVrms to 700 μVrms after radiation exposure.

Applications & Benefits

• cell_imaging: Medical imaging applications and perspective space imaging.
• benefits: Significant dark random noise reduction, improved output swing and dynamic range, constrained dark random noise increases after X-ray radiation.

Supporting Organizations

• supported_by: Dutch technology foundation IOP Photonic Devices project.

Manuscript Details

• publication_date: 12-16 Sept. 2011

Relevancy Score

• score: 10
• missing_fields:
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_fbe8f716-cc86-453e-8fec-6823639e193d-xray_radiation_effect_on_cmos_imagers_with_inpixel_buriedchannel_source_follower.json