Widedynamicrange Cmos Image Sensorscomparative Performance Analysis

• doi: 10.1109/TED.2009.2030599
• title: Wide-Dynamic-Range CMOS Image Sensors—Comparative Performance Analysis
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 4009
• access_type: LOCKED
• content_type: Journals
• abstract: A large variety of solutions for widening the dynamic range (DR) of CMOS image sensors has been proposed throughout the years. We propose a set of criteria upon which an effective comparative analysis of the performance of wide-DR (WDR) sensors can be done. Sensors for WDR are divided into seven categories: 1) companding sensors; 2) multimode sensors; 3) clipping sensors; 4) frequency-based sensors; 5) time-to-saturation (time-to-first spike) sensors; 6) global-control-over-the-integration-time sensors; and 7) autonomous-control-over-the-integration-time sensors. The comparative analysis for each category is based upon the quantitative assessments of the following parameters: signal-to-noise ratio, DR extension, noise floor, minimal transistor count, and sensitivity. These parameters are assessed using consistent assumptions and definitions, which are common to all WDR sensor categories. The advantages and disadvantages of each category in the sense of power consumption and data rate are discussed qualitatively. The influence of technology advancements on the proposed set of criteria is discussed as well.
• article_number: 5272465
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5272465
• html_url: https://ieeexplore.ieee.org/document/5272465/
• abstract_url: https://ieeexplore.ieee.org/document/5272465/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 5290333
• publication_year: 2009
• publication_date: Nov. 2009
• start_page: 2446
• end_page: 2461
• citing_paper_count: 96
• citing_patent_count: 4
• download_count: 2385
• insert_date: 20090929
• index_terms:
  • ieee_terms:
    • Sensors
    • Pixel
    • Signal to noise ratio
    • Sensitivity
    • Noise measurement
    • Capacitance
  • author_terms:
    • Active pixel sensor (APS)
    • CMOS image sensors (CIS)
    • dynamic range (DR)
    • noise floor (NF)
    • sensitivity
    • sensors
    • signal-to-noise ratio (SNR)
  • dynamic_index_terms:
    • Power Consumption
    • Noise Floor
    • Light Intensity
    • Integration Time
    • Linear Response
    • Sensitivity Of The Sensor
    • Threshold Voltage
    • Bottom Of Page
    • Linear Mode
    • Linear Transition
    • Pixel Level
    • Autonomic Control
    • High Dynamic Range
    • Dark Current
    • Memory Unit
    • Illumination Levels
    • Pixel Array
    • Conventional Sensors
    • End Of Frame
    • Reference Sensor
    • Additional Capacitance
    • Group Of Sensors
    • Reference Pixels
    • Spatial Resolution
    • Signal Processing
    • Frame Rate
    • Operation Mode
    • Sensor Operation
    • High Illumination
    • Implementation Of Method
    • Timing Of Events
• authors:
  • Author Name: Arthur Spivak
    Affiliation: VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/38270880100
    ID: 38270880100
    Order: 1
    Author Affiliations:
    • VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
  • Author Name: Alexander Belenky
    Affiliation: VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/38276353100
    ID: 38276353100
    Order: 2
    Author Affiliations:
    • VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
  • Author Name: Alexander Fish
    Affiliation: VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
    Author URL: https://ieeexplore.ieee.org/author/37268457100
    ID: 37268457100
    Order: 3
    Author Affiliations:
    • VLSI Systems Center, Ben-Gurion University of the Negev, Beersheba, Israel
  • Author Name: Orly Yadid-Pecht
    Affiliation: Electrical and Computer Engineering Department, University of Calgary, Calgary, AB, Canada
    Author URL: https://ieeexplore.ieee.org/author/38298354100
    ID: 38298354100
    Order: 4
    Author Affiliations:
    • Electrical and Computer Engineering Department, University of Calgary, Calgary, AB, Canada

Image Sensor

• sensor_type: CMOS
• resolution: Not explicitly mentioned in the text.
• dynamic_range: High (exact dB not specified)
• pixel_size: Not explicitly mentioned in the text.
• dark_current: Assumed to be 0.1 fA (based on assumptions in the paper)

Optical Data

• focal_length: Not explicitly mentioned in the text.
• aperture: Not explicitly mentioned in the text.
• field_of_view: Not explicitly mentioned in the text.
• distortion: Not explicitly mentioned in the text.

Performance Metrics

• frame_rate: 30 fps (common for the types of sensors discussed)
• signal_to_noise_ratio: Quantitative assessments provided, specifics not detailed
• sensitivity: Volts per picoampere (exact values not specified)
• shutter_speed: Not explicitly mentioned in the text.
• power_consumption: Discussed qualitatively depending on category of WDR sensors but not quantified
• noise: Minimum readout noise is 3 e−; other noise sources discussed include fixed-pattern noise and thermal noise.

Applications & Benefits

• cell_imaging: Applications in smartphones, medical devices, and automotive systems.
• benefits: High dynamic range, improved sensitivity and resolution, ability to capture high-contrast scenes.

Supporting Organizations

• supported_by: Not explicitly mentioned in the text.

Manuscript Details

• publication_date: Nov. 2009

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • focal_length
  • aperture
  • field_of_view
  • distortion

Processed JSON Filename

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