Which Photodiode To Use A Comparison Of Cmoscompatible Structures

• doi: 10.1109/JSEN.2009.2021805
• title: Which Photodiode to Use: A Comparison of CMOS-Compatible Structures
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 4001
• access_type: LOCKED
• content_type: Journals
• abstract: While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n+/p-sub, n-well/p-sub and p+/n-well/p-sub. All structures were fabricated in a 0.5 mum 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated-the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well /p-sub diode performed best in terms of sensitivity (an improvement of 3.5 times and 1.6 times over the n+/p-sub and p+/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1. 5times and 1.2 times improvement over the n+/p-sub and p+/n-well/p-sub diodes, respectively) while the p+/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity.
• article_number: 4957497
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4957497
• html_url: https://ieeexplore.ieee.org/document/4957497/
• abstract_url: https://ieeexplore.ieee.org/document/4957497/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 4957493
• publication_year: 2009
• publication_date: July 2009
• start_page: 752
• end_page: 760
• citing_paper_count: 60
• citing_patent_count: 1
• download_count: 2513
• insert_date: 20090519
• index_terms:
  • ieee_terms:
    • Photodiodes
    • Diodes
    • Dark current
    • Fabrication
    • CMOS technology
    • Solid state circuits
    • Image sensors
    • CMOS process
    • Capacitive sensors
    • Capacitance
  • author_terms:
    • Active pixel sensors
    • CMOS
    • photodiodes
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Thermal Noise
    • Current Noise
    • Dark Current
    • Spectral Sensitivity
    • CMOS Process
    • Wavelength Of Light
    • Quantum Efficiency
    • Photocurrent
    • Optical Power
    • Lens Power
    • Refractive Power
    • Electron Hole Pairs
    • Carrier Concentration
    • Charge Carrier Density
    • Effective Capacity
    • Effective Capacitance
    • Incident Radiation
    • Incident Irradiance
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Shot Noise
    • Poisson Noise
    • Small Capacity
    • Small Capacitance
    • Interface States
    • Interface Conditions
    • CMOS Technology
    • Phototransduction
    • Free Charge Carriers
    • Free Carrier Concentration
    • Free Carrier Absorption
    • Output Pixel
    • Generate Electron Hole Pairs
    • Generation Of Electron-hole Pairs
    • Junction Capacitance
    • Low Dark Current
    • Pixel Pitch
    • Spectral Power
    • Radiation Power
    • Radiative Flux
    • Irradiation Power
    • Pixel Array
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Absolute Temperature
    • Temperature In Kelvin
    • Thermodynamic Temperature
    • Fill Factor
• authors:
  • Author Name: Kartikeya Murari
    Affiliation: Department of Biomedical Engineering, Johns Hopkins University School of Medicine, Baltimore, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/37424380500
    ID: 37424380500
    Order: 1
    Author Affiliations:
    • Department of Biomedical Engineering, Johns Hopkins University School of Medicine, Baltimore, MD, USA
  • Author Name: Ralph Etienne-Cummings
    Affiliation: Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/38271387300
    ID: 38271387300
    Order: 2
    Author Affiliations:
    • Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, MD, USA
  • Author Name: Nitish Thakor
    Affiliation: Department of Biomedical Engineering, Johns Hopkins University School of Medicine, Baltimore, MD, USA
    Author URL: https://ieeexplore.ieee.org/author/37275752200
    ID: 37275752200
    Order: 3
    Author Affiliations:
    • Department of Biomedical Engineering, Johns Hopkins University School of Medicine, Baltimore, MD, USA
  • Author Name: Gert Cauwenberghs
    Affiliation: Division of Biology, University of California, San Diego, La Jolla, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37270866000
    ID: 37270866000
    Order: 4
    Author Affiliations:
    • Division of Biology, University of California, San Diego, La Jolla, CA, USA

Image Sensor

• sensor_type: CMOS
• resolution: Not explicitly mentioned.
• dynamic_range: Not explicitly mentioned.
• pixel_size: 30 µm (in presented design, however not all photodiode geometries were constant).
• dark_current: Not explicitly mentioned.

Optical Data

• focal_length: Not explicitly mentioned.
• aperture: Not explicitly mentioned.
• field_of_view: Not explicitly mentioned.
• distortion: Not explicitly mentioned.

Performance Metrics

• frame_rate: Not explicitly mentioned.
• signal_to_noise_ratio: SNR improvements of 1.5 and 1.2 for the /110-well /61/112-sub diode over the /110-sub and /110-well /61/112-sub diodes, respectively.
• sensitivity: Improvement of 3.5 and 1.6 times for the /110-well /61/112-sub diode over the /110-sub and /110-well /61/112-sub diodes, respectively.
• shutter_speed: Not explicitly mentioned.
• power_consumption: Not explicitly mentioned.
• noise: Measured noise across different pixels with data suggesting complexity in noise measurement.

Applications & Benefits

• cell_imaging: The sensors were designed considering various imaging needs, including biological fluorescence imaging which requires low dark current and high sensitivity.
• benefits: High sensitivity and low dark current are emphasized as benefits in specific applications.

Supporting Organizations

• supported_by: NIH grant R01AG029681, chips fabricated through the MOSIS foundry service.

Manuscript Details

• publication_date: July 2009

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • dynamic_range
  • specific_noise_values
  • power_consumption

Processed JSON Filename

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