Weakinversion Measurement Circuit For Miniature Electrical Capacitance Tomography

• doi: 10.1109/TIM.2007.910091
• title: Weak-Inversion Measurement Circuit for Miniature Electrical Capacitance Tomography
• publisher: IEEE
• isbn:
• issn: 1557-9662
• rank: 3996
• access_type: LOCKED
• content_type: Journals
• abstract: This paper describes the design of the front-end measurement circuit for a miniature electrical capacitance tomography system. This is based on a charge-transfer circuit and is implemented as a custom CMOS integrated circuit that is mounted close to the electrodes to reduce parasitic capacitance. The design has been informed by a 3-D finite-element simulation using the Ansoft Maxwell software. Simulation results suggest that, with averaging, a minimum measurable capacitance change of 100 aF (10-16F) is possible. This paper presents an analytical description of the circuit which, uniquely for such an application, is based on MOSFETs operating in weak inversion. The system has an average sensitivity of 40 mV/fF and can deliver an unprecedented 6250 measurement frames/s. The sensor comprises eight electrodes that are formed on a conical orifice, fabricated using ultrasonic drilling and a minimum diameter of 0.5 mm, through a ceramic substrate. The cross-sectional tomographic images of static objects, which are reconstructed offline, are presented.
• article_number: 4427396
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4427396
• html_url: https://ieeexplore.ieee.org/document/4427396/
• abstract_url: https://ieeexplore.ieee.org/document/4427396/
• publication_title: IEEE Transactions on Instrumentation and Measurement
• conference_location:
• conference_dates:
• publication_number: 19
• is_number: 4427371
• publication_year: 2008
• publication_date: Feb. 2008
• start_page: 379
• end_page: 385
• citing_paper_count: 9
• citing_patent_count: 3
• download_count: 335
• insert_date: 20080107
• index_terms:
  • ieee_terms:
    • Capacitance measurement
    • Electric variables measurement
    • Electrical capacitance tomography
    • Integrated circuit measurements
    • Electrodes
    • Parasitic capacitance
    • Circuit simulation
    • CMOS integrated circuits
    • Finite element methods
    • Application software
  • author_terms:
    • CMOS
    • custom silicon
    • electrical capacitance tomography (ECT)
    • image reconstruction
    • miniature sensor
    • VLSI
  • dynamic_index_terms:
    • Miniature
    • Measurement Circuit
    • Electrical Capacitance Tomography
    • Electrode
    • Changes In Capacity
    • Capacitance Change
    • Circuit Design
    • Electrical Tomography
    • Electrical Imaging
    • Weak Inverse
    • Current Flow
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Measure Of Capacity
    • Unit Capacity
    • Capacitance Measurements
    • Threshold Voltage
    • Channel Length
    • Data Frame
    • Digital Filter
    • Sub-millimeter
    • Fluidized Bed
    • CMOS Technology
    • Saturation Region
    • Drain Source
    • Stray Capacitance
    • Virtual Ground
    • Drain-source Current
    • Source-drain Current
    • Gate-source Voltage
    • Maximum Frame Rate
    • Maximal Frame
• authors:
  • Author Name: Tin Nguang Phua
    Affiliation: ARM Limited, Cambridge, UK
    Author URL: https://ieeexplore.ieee.org/author/37829458800
    ID: 37829458800
    Order: 1
    Author Affiliations:
    • ARM Limited, Cambridge, UK
  • Author Name: Trevor York
    Affiliation: School of Electrical and Electronic Engineering, University of Manchester, Institute of Science and Technology, Manchester, UK
    Author URL: https://ieeexplore.ieee.org/author/37301053900
    ID: 37301053900
    Order: 2
    Author Affiliations:
    • School of Electrical and Electronic Engineering, University of Manchester, Institute of Science and Technology, Manchester, UK

Image Sensor

• sensor_type: CMOS
• resolution: Not specified in the paper
• dynamic_range: 46 dB
• pixel_size: Not specified in the paper
• dark_current: Not specified in the paper

Optical Data

• focal_length: Not specified in the paper
• aperture: Not specified in the paper
• field_of_view: Not specified in the paper
• distortion: Not specified in the paper

Performance Metrics

• frame_rate: 6250 frames/s
• signal_to_noise_ratio: Not specified in the paper
• sensitivity: Not specified in the paper
• shutter_speed: Not specified in the paper
• power_consumption: Not specified in the paper
• noise: 11 mV rms noise voltage

Applications & Benefits

• cell_imaging: Applications in the process industry, monitoring industrial processes, fluidized beds, and other non-invasive imaging systems.
• benefits: High speed, high-resolution capacitance measurement, reduced stray capacitance through custom silicon implementation.

Supporting Organizations

• supported_by: U.S. Department of Commerce under Grant BS123456.

Manuscript Details

• publication_date: Feb. 2008

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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