Visible Light Sensitivity Enhancement Of Cmos Image Sensor With Pseudo
High Refractive Index Film Integrated By Directed Selfassembly Process
- doi: 10.1109/EDTM50988.2021.9420898
-
title: Visible Light Sensitivity Enhancement of CMOS
Image Sensor with Pseudo High Refractive Index Film Integrated by
Directed Self-Assembly Process
- publisher: IEEE
- isbn: 978-1-7281-8177-6
- issn:
- rank: 3970
- access_type: LOCKED
- content_type: Conferences
-
abstract: We have developed a back-illuminated CMOS
image sensor (BI -CIS) using a pseudo high refractive index film (pHRF)
consisting of an array of minute holes. The new process architecture for
the low reflectivity surface is achieved by integrating the directed
self-assembly (DSA) process with the conventional process. This is the
first report of an image sensor fabricated using the DSA process. The
proposed sensor has low dark current and has enhanced sensitivity for
wavelengths ranging from 400 nm to 550 nm.
- article_number: 9420898
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9420898
-
html_url:
https://ieeexplore.ieee.org/document/9420898/
-
abstract_url:
https://ieeexplore.ieee.org/document/9420898/
-
publication_title: 2021 5th IEEE Electron Devices
Technology & Manufacturing Conference (EDTM)
- conference_location: Chengdu, China
- conference_dates: 8-11 April 2021
- publication_number: 9420829
- is_number: 9420830
- publication_year: 2021
- publication_date: 8-11 April 2021
- start_page: 1
- end_page: 3
- citing_paper_count: 0
- citing_patent_count: 0
- download_count: 1725
- insert_date: 20210512
-
index_terms:
-
ieee_terms:
- Reflectivity
- Sensitivity
- Self-assembly
- Surface waves
- Refractive index
- Dark current
- CMOS image sensors
-
dynamic_index_terms:
- Visible Light
- Visible Region
- Visible Spectrum
- Visible-light
- Refractive Index
- Refractive Indices
- Image Sensor
- Camera Sensor
- Directed Self-assembly
- Directed Self-assembly Process
- Wavelength Range
- Range Of Wavelengths
- Low Reflectance
- Dark Current
- Processing Architecture
- Hole Array
- Low Dark Current
- Wavelength Of Light
- Wavelengths Of Light
- Quantum Efficiency
- Process Flow
- Block Copolymers
- Hole Diameter
- Conventional Design
- Conventional Structure
- Visible Light Range
- Visible-light Range
- Pitch Size
- Passive Film
- Dry Etching
-
isbn_formats:
-
format: Print on Demand(PoD) ISBN,
value: 978-1-7281-8177-6,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-7281-8176-9,
isbnType: New-2005
-
authors:
-
Author Name: I. Oshiyama
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37702307100
ID: 37702307100
Order: 1
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: T. Shigetoshi
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37541911600
ID: 37541911600
Order: 2
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: I. Mita
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37088860972
ID: 37088860972
Order: 3
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: N. Sumitani
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37088862041
ID: 37088862041
Order: 4
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: T. Oinoue
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37086288391
ID: 37086288391
Order: 5
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: S. Saito
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/38238076100
ID: 38238076100
Order: 6
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: T. Okawa
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37088861491
ID: 37088861491
Order: 7
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: Y. Ebiko
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37333274000
ID: 37333274000
Order: 8
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: K. Yokochi
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37088862008
ID: 37088862008
Order: 9
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: Y. Kitano
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37085829248
ID: 37085829248
Order: 10
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: Y. Hagimoto
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37297581900
ID: 37297581900
Order: 11
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: T. Hirano
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37285319700
ID: 37285319700
Order: 12
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
-
Author Name: H. Iwamoto
Affiliation: Sony Semiconductor Solutions Corp.,
Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37297571400
ID: 37297571400
Order: 13
Author Affiliations:
- Sony Semiconductor Solutions Corp., Kanagawa, Japan
Image Sensor
- sensor_type: CMOS
- resolution: 20 Mega pixels (1.4 μm pitch)
- dynamic_range: not specified
- pixel_size: 1.4 μm
-
dark_current: equivalent to conventional structure
(exact value not specified)
Optical Data
- focal_length: not specified
- aperture: not specified
- field_of_view: not specified
- distortion: not specified
Performance Metrics
-
signal_to_noise_ratio: higher due to increased quantum
efficiency
Applications & Benefits
-
cell_imaging: enabled enhanced sensitivity for
wavelengths from 400 nm to 550 nm
-
benefits: Improvement in quantum efficiency (QE) and
signal-to-noise ratio (SNR) with the new pHRF structure
Supporting Organizations
- supported_by: Sony Semiconductor Solutions Corp.
Manuscript Details
- publication_date: 8-11 April 2021
Relevancy Score
- score: 10
-
missing_fields:
- dynamic_range
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- sensitivity
- shutter_speed
- power_consumption
- noise
Processed JSON Filename
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