Underexposure Control In Cmosoxram Pixel
- doi: 10.1109/ICEmElec.2016.8074568
-
title: Under-exposure control in CMOS-OxRAM pixel
- publisher: IEEE
- isbn: 978-1-5090-3660-8
- issn:
- rank: 3937
- access_type: LOCKED
- content_type: Conferences
-
abstract: In this paper we build on our previous work
on the capacitive use of OxRAM devices inside CMOS image sensors (CIS).
Previously we had shown how capacitive properties of OxRAM devices can
be exploited to overcome the issue of over-exposure (bright-light). In
this work, we show a methodology for correction of under-exposure
(dim-light). HfOx based OxRAM device is used as a programmable
capacitive load in a conventional 4T-APS (active pixel sensor) circuit,
simulated at 180 nm technology node. Through the proposed under-exposure
correction a DR improvement of ~ 20 dB was acheived.
- article_number: 8074568
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8074568
-
html_url:
https://ieeexplore.ieee.org/document/8074568/
-
abstract_url:
https://ieeexplore.ieee.org/document/8074568/
-
publication_title: 2016 3rd International Conference on
Emerging Electronics (ICEE)
- conference_location: Mumbai, India
- conference_dates: 27-30 Dec. 2016
- publication_number: 8055054
- is_number: 8074411
- publication_year: 2016
- publication_date: 27-30 Dec. 2016
- start_page: 1
- end_page: 4
- citing_paper_count: 2
- citing_patent_count: 0
- download_count: 115
- insert_date: 20171019
-
index_terms:
-
ieee_terms:
- Capacitance
- Gain
- Hafnium compounds
- Photodiodes
- Dynamic range
- Gain control
- Electrodes
-
author_terms:
- RRAM
- OxRAM
- pixel conversion gain
- CMOS Image Sensor
- Under exposure
-
dynamic_index_terms:
- Technology Node
- Sensor Pixel
- Electrode
- Dynamic Range
- Control Signal
- Detection Range
- I-V Curves
- Current Voltage Characteristics
- I-V Characteristics
- Bright Light
- Depletion Region
- Space Charge Region
- Depletion Layer
- Depletion Zone
- Impact Of Transfer
- Conversion Gain
- dB Improvement
- Light Integral
-
isbn_formats:
-
format: Print on Demand(PoD) ISBN,
value: 978-1-5090-3660-8,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-5090-3659-2,
isbnType: New-2005
-
authors:
-
Author Name: Ashwani Kumar
Affiliation: Indian Institute of Technology Delhi,
New Delhi, India
Author URL:
https://ieeexplore.ieee.org/author/37085771739
ID: 37085771739
Order: 1
Author Affiliations:
- Indian Institute of Technology Delhi, New Delhi, India
-
Author Name: Manan Suri
Affiliation: Indian Institute of Technology Delhi,
New Delhi, India
Author URL:
https://ieeexplore.ieee.org/author/37902980300
ID: 37902980300
Order: 2
Author Affiliations:
- Indian Institute of Technology Delhi, New Delhi, India
Image Sensor
- sensor_type: CMOS
- resolution: Not specified in the text
- dynamic_range: 62.2 dB
- pixel_size: Not specified in the text
- dark_current: Not specified in the text
Optical Data
- focal_length: Not specified in the text
- aperture: Not specified in the text
- field_of_view: Not specified in the text
- distortion: Not specified in the text
Performance Metrics
- frame_rate: Not specified in the text
- signal_to_noise_ratio: Not specified in the text
- sensitivity: Not specified in the text
- shutter_speed: Not specified in the text
- power_consumption: Not specified in the text
- noise: Not specified in the text
Applications & Benefits
-
cell_imaging: Mentioned as applicable for surveillance
and medical imaging.
-
benefits: Improvement of dynamic range under varying
lighting conditions.
Supporting Organizations
-
supported_by: Department of Science and Technology
(DST), Government of India
Manuscript Details
- publication_date: 27-30 Dec. 2016
Relevancy Score
- score: 10
-
missing_fields:
- resolution
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
Processed JSON Filename
request_f1d4755c-af13-4660-94c8-90fbbd08368b-underexposure_control_in_cmosoxram_pixel.json