Two Dimensional Model For Lateral Photodiode

• doi: 10.1109/DTIS.2006.1708671
• title: Two dimensional model for lateral photodiode
• publisher: IEEE
• isbn: 0-7803-9726-6
• issn:
• rank: 3906
• access_type: LOCKED
• content_type: Conferences
• abstract: The design of mixed signal systems on chip is nowadays challenging, especially those including active pixel sensors (APS) for imaging. To simulate such systems, it is necessary to use optoelectronic models of the behavior of the photodetectors. The most used photodetectors in CMOS technologies are vertical photodiodes, but for specific applications, lateral photodiodes are needed. Vertical photodiodes can be described by one dimensional models but in lateral photodiode, bidimensional effects appear. Therefore a physical two dimensional model of lateral photodiode has been developed. An electrical model was defined and physical parameters which take place in this model, were presented. The results were compared to an approximated one dimensional model and show that a two dimensional model is needed to simulate the light response of lateral photodiodes
• article_number: 1708671
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1708671
• html_url: https://ieeexplore.ieee.org/document/1708671/
• abstract_url: https://ieeexplore.ieee.org/document/1708671/
• publication_title: International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.
• conference_location: Tunis, Tunisia
• conference_dates: 5-7 Sept. 2006
• publication_number: 11202
• is_number: 36064
• publication_year: 2006
• publication_date: 5-7 Sept. 2006
• start_page: 294
• end_page: 298
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 231
• insert_date: 20061016
• index_terms:
  • ieee_terms:
    • Photodiodes
    • Semiconductor device modeling
    • Photodetectors
    • CMOS technology
    • Signal design
    • System-on-a-chip
    • Pixel
    • Image sensors
    • Sensor systems
    • CMOS image sensors
  • dynamic_index_terms:
    • Photodiode
    • Dimensional Model
    • Photodetector
    • Mixed Signals
    • Placement Model
    • System-on-chip
    • Abscisic Acid
    • Abscission
    • Absorption Coefficient
    • General Solution
    • Weak Solution
    • Electric Current
    • Photocurrent
    • Electron Hole Pairs
    • Carrier Concentration
    • Charge Carrier Density
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • near-UV
    • Near-ultraviolet
    • Doping Level
    • Spectrum Efficiency
    • Ultraviolet Region
    • P-n Junction
    • Previous Equation
    • Neutral Regions
    • Diffusion Current
    • Drift Current
    • Diffusion Zone
    • Minority Carrier
    • Diffusion Region
    • Regional Dissemination
    • Regional Dispersal
    • Electron Density
    • Electronic Absorption
    • Electron Concentration
    • Blue Region
    • Carrier Generation
    • Multiple Exciton Generation
    • Carrier Multiplication
• isbn_formats:
  • format: Print ISBN, value: 0-7803-9726-6, isbnType: Historical
• authors:
  • Author Name: A. Alexandre
    Affiliation: Laboratoire des Instruments et Systèmes d'lle de France case 252, Université Pierre et Marie Curie, Paris cedex 05, France
    Author URL: https://ieeexplore.ieee.org/author/37862600700
    ID: 37862600700
    Order: 1
    Author Affiliations:
    • Laboratoire des Instruments et Systèmes d'lle de France case 252, Université Pierre et Marie Curie, Paris cedex 05, France
  • Author Name: F. Dadouche
    Affiliation: Laboratoire des Instruments et Systèmes d'lle de France case 252, Université Pierre et Marie Curie, Paris cedex 05, France
    Author URL: https://ieeexplore.ieee.org/author/37085396582
    ID: 37085396582
    Order: 2
    Author Affiliations:
    • Laboratoire des Instruments et Systèmes d'lle de France case 252, Université Pierre et Marie Curie, Paris cedex 05, France
  • Author Name: P. Garda
    Affiliation: Laboratoire des Instruments et Systèmes d'lle de France case 252, Université Pierre et Marie Curie, Paris cedex 05, France
    Author URL: https://ieeexplore.ieee.org/author/37271520100
    ID: 37271520100
    Order: 3
    Author Affiliations:
    • Laboratoire des Instruments et Systèmes d'lle de France case 252, Université Pierre et Marie Curie, Paris cedex 05, France

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: CMOS image sensors are crucial in medical devices for cell imaging.
• benefits: Enable digital imaging in applications such as smartphones, medical devices, and automotive systems.

Supporting Organizations

• supported_by: Laboratoire des Instruments et Systèmes d’Ile de France, Université Pierre et Marie Curie

Manuscript Details

• publication_date: 5-7 Sept. 2006

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • publication_date

Processed JSON Filename

request_8e39590c-8911-4e8a-be77-9372e4125952-two_dimensional_model_for_lateral_photodiode.json