Tsv Stress Testing And Modeling

• doi: 10.1109/ECTC.2010.5490650
• title: TSV stress testing and modeling
• publisher: IEEE
• isbn: 978-1-4244-6411-1
• issn: 0569-5503
• partnum: 10CH38220
• rank: 3704
• access_type: LOCKED
• content_type: Conferences
• abstract: 3D interconnect technology bonds semiconductor wafers and dies to produce multilevel chips with an optimum combination of cost, functionality, performance, and power consumption. This technology provides a pathway toward integrating CMOS ICs, as well as CMOS chips with emerging technologies. One major challenge of 3D IC integration is the reliability due to thermal stress during the process. The investigation on the stress measurement and analysis of through-silicon vias (TSVs) is important for 3D IC development. This work will summarize the measurement setup and finite element method (FEM) modeling results to investigate the stress profiles and processing effects for TSVs based on the use of a Piezo stress sensor embedded in a test element group (TEG) and a digital image analyzer (DIA). The results can be used to develop guidelines for the TSV density and pitch affecting Si damage.
• article_number: 5490650
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5490650
• html_url: https://ieeexplore.ieee.org/document/5490650/
• abstract_url: https://ieeexplore.ieee.org/document/5490650/
• publication_title: 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)
• conference_location: Las Vegas, NV, USA
• conference_dates: 1-4 June 2010
• publication_number: 5482824
• is_number: 5490635
• publication_year: 2010
• publication_date: 1-4 June 2010
• start_page: 1273
• end_page: 1280
• citing_paper_count: 9
• citing_patent_count: 1
• download_count: 1144
• insert_date: 20100621
• index_terms:
  • ieee_terms:
    • Through-silicon vias
    • CMOS technology
    • Thermal stresses
    • Three-dimensional integrated circuits
    • Stress measurement
    • Semiconductor device testing
    • Semiconductor device modeling
    • Cost function
    • Energy consumption
    • Semiconductor device measurement
  • dynamic_index_terms:
    • Through Silicon Via
    • Finite Element Method
    • Thermal Stress
    • Heat Load
    • Measures Of Stress
    • Stress Sensor
    • Digital Image Analysis
    • Temperature Range
    • Temperature Dependence
    • Annealing Temperature
    • Poisson’s Ratio
    • Tensile Stress
    • Compressive Stress
    • Magnitude Of Stress
    • Sensor Resistance
    • Metal Lines
    • Biaxial Stress
    • Axis Of The Graph
    • Axis Of Each Graph
• isbn_formats:
  • format: Online ISBN, value: 978-1-4244-6411-1, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-6410-4, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-6412-8, isbnType: New-2005
• authors:
  • Author Name: Masazumi Amagai
    Affiliation: TMG Japan, Texas Instruments, Modeling Group, Inashiki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37353032100
    ID: 37353032100
    Order: 1
    Author Affiliations:
    • TMG Japan, Texas Instruments, Modeling Group, Inashiki, Japan
  • Author Name: Yutaka Suzuki
    Affiliation: TMG Japan, Texas Instruments, Modeling Group, Inashiki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37958864200
    ID: 37958864200
    Order: 2
    Author Affiliations:
    • TMG Japan, Texas Instruments, Modeling Group, Inashiki, Japan

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Not specified
• benefits: Not specified

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: 1-4 June 2010

Relevancy Score

• score: 3
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits
  • supported_by

Processed JSON Filename

request_12cb8e5b-ede1-4463-9642-78191e50b596-tsv_stress_testing_and_modeling.json