Total Ionizing Dose Effects On 4Transistor Cmos Image Sensor Pixels

• doi: 10.1109/EDSSC.2010.5713738
• title: Total ionizing dose effects on 4-transistor CMOS image sensor pixels
• publisher: IEEE
• isbn: 978-1-4244-9996-0
• issn:
• partnum: 10EX5130
• rank: 3870
• access_type: LOCKED
• content_type: Conferences
• abstract: This work presents a study on the degradation mechanism of 4T CMOS Image Sensors (CIS) induced by X-Rays irradiation. The degradation is mainly demonstrated by measurements of increased dark signal and dark random noise. The radiation affects the sensor's behavior differently for different reset voltages and transfer gate control, which is evaluated in detail. The basic failure mechanism is presented and it shows that the radiation induced increase of random telegraph signal noise and dark random noise is mostly originated from the Si-SiO2 interface trap generation. Meanwhile, the charge trapping in the shallow trench isolation oxide (STI) is responsible for the post-irradiation dark signal increase as well. It is also illustrated that the post-irradiation pinned photodiode (PPD) and the transfer gate will obviously contribute to the sensor degradation as a post-irradiation dark signal and noise source.
• article_number: 5713738
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5713738
• html_url: https://ieeexplore.ieee.org/document/5713738/
• abstract_url: https://ieeexplore.ieee.org/document/5713738/
• publication_title: 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
• conference_location: Hong Kong, China
• conference_dates: 15-17 Dec. 2010
• publication_number: 5706405
• is_number: 5713670
• publication_year: 2010
• publication_date: 15-17 Dec. 2010
• start_page: 1
• end_page: 4
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 554
• insert_date: 20110214
• index_terms:
  • ieee_terms:
    • Atmospheric measurements
    • Particle measurements
    • CMOS integrated circuits
    • Logic gates
    • Size measurement
    • Sensors
    • Pixel
  • author_terms:
    • 4T CMOS Image Sensor
    • X-Rays irradiation
    • dark signal
    • dark random noise
    • pinned photodiode
    • interface trap
    • STI
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Sensor Pixel
    • Total Ionizing Dose Effect
    • Irradiation
    • Trapping
    • SNARE
    • Random Noise
    • Channel Noise
    • Noise Sources
    • Increase In Noise
    • Charge Trapping
    • Dark Noise
    • Dark Signal
    • Interface Trap
    • Reset Voltage
    • PIN Photodiode
    • CCD Camera
    • Charge-coupled Device
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
    • Integration Time
    • Dose Levels
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Radiation Tolerance
    • Radiation Hardness
    • Electrical Stress
    • Leakage Current Increases
    • Electric Distribution
    • Increase In Width
    • Bias Point
• isbn_formats:
  • format: CD, value: 978-1-4244-9996-0, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-9997-7, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-9998-4, isbnType: New-2005
• authors:
  • Author Name: Jiaming Tan
    Affiliation: Electronic Instrumentation Laboratory, Delft University of Technnology, Delft, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37087445397
    ID: 37087445397
    Order: 1
    Author Affiliations:
    • Electronic Instrumentation Laboratory, Delft University of Technnology, Delft, Netherlands
  • Author Name: Albert J. P. Theuwissen
    Affiliation: Harvest Imaging, Bree, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 2
    Author Affiliations:
    • Harvest Imaging, Bree, Belgium

Image Sensor

• sensor_type: CMOS
• resolution: 150x197 pixels
• dynamic_range: 12-bit
• pixel_size: 10µm
• dark_current: Not Specified

Optical Data

• focal_length: Not Specified
• aperture: Not Specified
• field_of_view: Not Specified
• distortion: Not Specified

Performance Metrics

• frame_rate: Not Specified
• signal_to_noise_ratio: Not Specified
• sensitivity: Not Specified
• shutter_speed: Not Specified
• power_consumption: Not Specified
• noise: Random telegraph signal noise, dark random noise

Applications & Benefits

• cell_imaging: Applications in medical imaging and satellite tracking
• benefits: Higher radiation tolerance compared to CCD sensors, promising future in radiation environment.

Supporting Organizations

• supported_by: Philips Health Care, Delft University of Technology

Manuscript Details

• publication_date: 15-17 Dec. 2010

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_3832cd70-3716-4725-b5c5-c433ae0e120d-total_ionizing_dose_effects_on_4transistor_cmos_image_sensor_pixels.json