Total Dose Evaluation Of Deep Submicron Cmos Imaging Technology Through Elementary Device And Pixel Array Behavior Analysis

• doi: 10.1109/TNS.2008.2005294
• title: Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 3866
• access_type: LOCKED
• content_type: Journals
• abstract: Ionizing radiation effects on CMOS image sensors (CIS) manufactured using a 0.18 mum imaging technology are presented through the behavior analysis of elementary structures, such as field oxide FET, gated diodes, photodiodes and MOSFETs. Oxide characterizations appear necessary to understand ionizing dose effects on devices and then on image sensors. The main degradations observed are photodiode dark current increases (caused by a generation current enhancement), minimum size NMOSFET off-state current rises and minimum size PMOSFET radiation induced narrow channel effects. All these effects are attributed to the shallow trench isolation degradation which appears much more sensitive to ionizing radiation than inter layer dielectrics. Unusual post annealing effects are reported in these thick oxides. Finally, the consequences on sensor design are discussed thanks to an irradiated pixel array and a comparison with previous work is discussed.
• article_number: 4723808
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4723808
• html_url: https://ieeexplore.ieee.org/document/4723808/
• abstract_url: https://ieeexplore.ieee.org/document/4723808/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 4723712
• publication_year: 2008
• publication_date: Dec. 2008
• start_page: 3494
• end_page: 3501
• citing_paper_count: 32
• citing_patent_count: 0
• download_count: 651
• insert_date: 20090119
• index_terms:
  • ieee_terms:
    • CMOS technology
    • Pixel
    • Image analysis
    • Sensor arrays
    • CMOS image sensors
    • Ionizing radiation
    • Photodiodes
    • Degradation
    • MOSFET circuits
    • Computational Intelligence Society
  • author_terms:
    • Active pixel sensors (APS)
    • CMOS image sensors (CIS)
    • field oxide FET (FOXFET)
    • gated diode
    • inter layer dielectric FET (ILDFET)
    • ionizing radiation
    • radiation-hardening-by-design (RHDB)
    • total dose
  • dynamic_index_terms:
    • Total Dose
    • Pixel Array
    • Deep Submicron
    • Minimum Size
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Current Increases
    • Image Sensor
    • Camera Sensor
    • Field-effect Transistors
    • Sensor Design
    • Dark Current
    • Oxide Thickness
    • Effects Of Ionizing Radiation
    • Voltage-gated
    • Gate Voltage
    • Low Voltage
    • Threshold Voltage
    • Chemical Doping
    • Doped Silicon
    • P-doping
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Annealing Step
    • Linear Density
    • Interface States
    • Interface Conditions
    • Reverse Current
    • Opposite Currents
    • Gate Oxide
    • Charge Trapping
    • Interface Trap
    • Threshold Voltage Shift
    • Doping Density
    • Transistor Channel
    • Radiation Tolerance
    • Radiation Hardness
    • P-channel
    • Space Applications
• authors:
  • Author Name: V. Goiffon
    Affiliation: ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 1
    Author Affiliations:
    • ISAE, Université de Toulouse, Toulouse, France
  • Author Name: P. Magnan
    Affiliation: ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 2
    Author Affiliations:
    • ISAE, Université de Toulouse, Toulouse, France
  • Author Name: O. Saint-pe
    Affiliation: EADS Astrium GmbH, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38274783700
    ID: 38274783700
    Order: 3
    Author Affiliations:
    • EADS Astrium GmbH, Toulouse, France
  • Author Name: F. Bernard
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38274727300
    ID: 38274727300
    Order: 4
    Author Affiliations:
    • CNES, Toulouse, France
  • Author Name: G. Rolland
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37424863500
    ID: 37424863500
    Order: 5
    Author Affiliations:
    • CNES, Toulouse, France

Image Sensor

• sensor_type: CMOS
• resolution: 128x128 pixels
• dynamic_range: Not explicitly stated
• pixel_size: Not explicitly stated
• dark_current: Increased due to generation current enhancement related to radiation effects, specific values not provided, but generally observed to rise with total dose radiation exposure, e.g., increases in dark current across various photodiode structures tested in the paper during and after irradiation processes.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: Increased dark current after radiation, specific values not provided.

Applications & Benefits

• cell_imaging: CMOS Image Sensors are widely used in applications such as smartphones, medical devices, and automotive systems.
• benefits: Benefits include high integration, low power consumption, and adaptability for digital imaging applications.

Supporting Organizations

• supported_by: EADS Astrium, CNES, Université de Toulouse, ISAE, ONERA.

Manuscript Details

• publication_date: Dec. 2008

Relevancy Score

• score: 8
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • design features like microlenses and on-chip color filters, global or rolling shutters, backside illumination

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