Threedimensional Integrated Circuits And Stacked Cmos Image Sensors Using Direct Bonding Of Soi Layers

• doi: 10.1109/3DIC.2015.7334562
• title: Three-dimensional integrated circuits and stacked CMOS image sensors using direct bonding of SOI layers
• publisher: IEEE
• isbn: 978-1-4673-9384-3
• issn:
• rank: 3844
• access_type: LOCKED
• content_type: Conferences
• abstract: We report on three-dimensionally (3D) integrated circuits and stacked CMOS image sensors by using the direct bonding of silicon-on-insulator (SOI) layers. Since the developed process allows small embedded Au electrodes by damascene process, high-density integration is possible within an image sensor pixel area of a few micrometers, beyond the limit of the conventional technique such as through silicon vias (TSVs). We confirmed a successful operation of the developed 3D integrated circuits with NFETs and PFETs bonded from separate wafers. We also demonstrated stacked CMOS image sensor with pixel-wise 3D integration, which indicates that our technology is promising for high-density integrated circuits and CMOS image sensors.
• article_number: 7334562
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7334562
• html_url: https://ieeexplore.ieee.org/document/7334562/
• abstract_url: https://ieeexplore.ieee.org/document/7334562/
• publication_title: 2015 International 3D Systems Integration Conference (3DIC)
• conference_location: Sendai, Japan
• conference_dates: 31 Aug.-2 Sept. 2015
• publication_number: 7328029
• is_number: 7334459
• publication_year: 2015
• publication_date: 31 Aug.-2 Sept. 2015
• start_page: TS9.2.1
• end_page: TS9.2.4
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 505
• insert_date: 20151123
• index_terms:
  • ieee_terms:
    • Electrodes
    • Gold
    • Artificial intelligence
    • Three-dimensional displays
    • CMOS integrated circuits
    • Bonding
    • Through-silicon vias
  • author_terms:
    • CMOS integrated circuits
    • CMOS image sensors
    • silicon-on-insulator (SOI)
    • three-dimensional integration
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Au Electrode
    • High-density Integration
    • 3D Integration
    • Signal Processing
    • Shear Stress
    • Inverter
    • Ar Plasma
• isbn_formats:
  • format: USB ISBN, value: 978-1-4673-9384-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4673-9385-0, isbnType: New-2005
• authors:
  • Author Name: Masahide Goto
    Affiliation: NHK Science and Technology Research Laboratories, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37330360100
    ID: 37330360100
    Order: 1
    Author Affiliations:
    • NHK Science and Technology Research Laboratories, Tokyo, Japan
  • Author Name: Kei Hagiwara
    Affiliation: NHK Science and Technology Research Laboratories, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37399139900
    ID: 37399139900
    Order: 2
    Author Affiliations:
    • NHK Science and Technology Research Laboratories, Tokyo, Japan
  • Author Name: Yoshinori Iguchi
    Affiliation: NHK Science and Technology Research Laboratories, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37429827800
    ID: 37429827800
    Order: 3
    Author Affiliations:
    • NHK Science and Technology Research Laboratories, Tokyo, Japan
  • Author Name: Hiroshi Ohtake
    Affiliation: NHK Science and Technology Research Laboratories, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37331518200
    ID: 37331518200
    Order: 4
    Author Affiliations:
    • NHK Science and Technology Research Laboratories, Tokyo, Japan
  • Author Name: Takuya Saraya
    Affiliation: The University of Tokyo, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37293949700
    ID: 37293949700
    Order: 5
    Author Affiliations:
    • The University of Tokyo, Tokyo, Japan
  • Author Name: Masaharu Kobayashi
    Affiliation: The University of Tokyo, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37085444063
    ID: 37085444063
    Order: 6
    Author Affiliations:
    • The University of Tokyo, Tokyo, Japan
  • Author Name: Eiji Higurashi
    Affiliation: The University of Tokyo, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37265713900
    ID: 37265713900
    Order: 7
    Author Affiliations:
    • The University of Tokyo, Tokyo, Japan
  • Author Name: Hiroshi Toshiyoshi
    Affiliation: The University of Tokyo, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37274513000
    ID: 37274513000
    Order: 8
    Author Affiliations:
    • The University of Tokyo, Tokyo, Japan
  • Author Name: Toshiro Hiramoto
    Affiliation: The University of Tokyo, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37268252200
    ID: 37268252200
    Order: 9
    Author Affiliations:
    • The University of Tokyo, Tokyo, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 64 pixels
• dynamic_range: Not specified
• pixel_size: 80 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Video images captured by the developed CMOS image sensor showed successful conversion of incident light into electrical signals for all pixels.
• benefits: Enhanced sensitivity, improved imaging resolution, operation speed, and dynamic range for illumination.

Supporting Organizations

• supported_by: NHK Science and Technology Research Laboratories, University of Tokyo.

Manuscript Details

• publication_date: 31 Aug.-2 Sept. 2015

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources

Processed JSON Filename

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