Thirty Twostage Cmos Tdi Image Sensor With Onchip Analog Accumulator

• doi: 10.1109/TVLSI.2013.2256809
• title: Thirty Two-Stage CMOS TDI Image Sensor With On-Chip Analog Accumulator
• publisher: IEEE
• isbn:
• issn: 1557-9999
• rank: 3837
• access_type: LOCKED
• content_type: Journals
• abstract: This brief presents a 32-stage CMOS time delay integration image sensor with on-chip column parallel analog accumulator. Temporal oversampling technique is applied in the sensor to realize synchronous signal capturing. A column parallel analog accumulator with layout size of 0.09 mm2 is integrated at both sides of pixel array. Through adopting input-offset storing technique, a column fixed pattern noise because of the amplifier's offset variations is reduced by the accumulator. The accumulator also acts as a pixel noise canceller. The fabricated chip in 0.18- μm one-poly four-metal 1.8/3.3-V CMOS technology achieves the maximum line rate of 3875 lines/s. The measured signal-to-noise ratio of the fabricated sensor is improved on average by 11.9 dB at 16 stages and 14.2 dB at 32 stages. The presented sensor is suitable for application in low illumination, high scanning speed, and remote sensing systems.
• article_number: 6514054
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6514054
• html_url: https://ieeexplore.ieee.org/document/6514054/
• abstract_url: https://ieeexplore.ieee.org/document/6514054/
• publication_title: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
• conference_location:
• conference_dates:
• publication_number: 92
• is_number: 6774899
• publication_year: 2014
• publication_date: April 2014
• start_page: 951
• end_page: 956
• citing_paper_count: 25
• citing_patent_count: 1
• download_count: 1437
• insert_date: 20130506
• index_terms:
  • author_terms:
    • Analog accumulator
    • CMOS image sensors
    • readout circuits
    • signal-to-noise ratio (SNR)
    • time delay integration (TDI)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Time Delay Integration
    • Signal-to-noise
    • Signal-to-noise Ratio
    • CMOS Technology
    • Pixel Array
    • Low Illumination
    • Pixel Noise
    • High Scanning Speed
    • Square Root
    • Effect Of Noise
    • Stochastic Events
    • Stochastic Effects
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Thermal Noise
    • Current Noise
    • Capacity Of Samples
    • Reference Curve
    • Charge Injection
    • Transmittance Curves
    • Mean Relative Difference
    • Mean Relative Deviation
    • Flicker Noise
    • Readout Circuit
• authors:
  • Author Name: Kaiming Nie
    Affiliation: Tianjin University, School of Electronic Information and Engineering, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37085670429
    ID: 37085670429
    Order: 1
    Author Affiliations:
    • Tianjin University, School of Electronic Information and Engineering, Tianjin, China
  • Author Name: Suying Yao
    Affiliation: Tianjin University, School of Electronic Information and Engineering, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37402574300
    ID: 37402574300
    Order: 2
    Author Affiliations:
    • Tianjin University, School of Electronic Information and Engineering, Tianjin, China
  • Author Name: Jiangtao Xu
    Affiliation: Tianjin University, School of Electronic Information and Engineering, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37577831800
    ID: 37577831800
    Order: 3
    Author Affiliations:
    • Tianjin University, School of Electronic Information and Engineering, Tianjin, China
  • Author Name: Jing Gao
    Affiliation: Tianjin University, School of Electronic Information and Engineering, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/38239776100
    ID: 38239776100
    Order: 4
    Author Affiliations:
    • Tianjin University, School of Electronic Information and Engineering, Tianjin, China

Image Sensor

• sensor_type: CMOS
• resolution: 128 x 32 pixels
• dynamic_range: 40.5 dB (at stage=32)
• pixel_size: 15 µm x 15 µm
• dark_current: Not directly specified, but contributions from pixel architecture mentioned.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 3875 lines/s
• signal_to_noise_ratio: 14.2 dB (at 32 stages)
• sensitivity: 76.9 V/lux·s (at stage=32)
• power_consumption: 110 mW at 3875 lines/s
• noise: 1.98 LSB (rms) at stage=32

Applications & Benefits

• cell_imaging: Suitable for remote sensing, low light conditions, and high scanning speed applications.
• benefits: Improved SNR, suitable for various imaging applications.

Supporting Organizations

• supported_by: National Natural Science Foundation of China (Grants 61036004, 61274021)

Manuscript Details

• publication_date: April 2014

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion

Processed JSON Filename

request_26d5b844-b088-4126-8f2c-173898b0707f-thirty_twostage_cmos_tdi_image_sensor_with_onchip_analog_accumulator.json