The Features And Characteristics Of 5M Cmos Image Sensor With 19Spl
Times19spl Mumsup 2 Pixels
- doi: 10.1109/IEDM.2005.1609475
-
title: The features and characteristics of 5M CMOS
image sensor with 1.9/spl times/1.9/spl mu/m/sup 2/ pixels
- publisher: IEEE
- isbn: 0-7803-9268-X
- issn: 2156-017X
- partnum: 05CH37703C
- rank: 3807
- access_type: LOCKED
- content_type: Conferences
-
abstract: 5 mega CMOS image sensor with 1.9mum-pitch
pixels has been implemented with 0.13 mum low power CMOS process. By
applying 4-shared pixel architecture, 2.5V operation voltage, and tight
design rules for some critical layers in pixels, high fill factor and
the corresponding high saturation could be obtained. Image lag was
sufficiently suppressed by pulse-boosting of transfer gate voltage and
electrical cross-talk was suppressed by use of n-type epitaxial layer.
It is shown that several sophisticated processes improve sensitivity,
temporal random noise, and dark current. With this technology, full
5-mega density CMOS image sensor chips have been successfully developed
- article_number: 1609475
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1609475
-
html_url:
https://ieeexplore.ieee.org/document/1609475/
-
abstract_url:
https://ieeexplore.ieee.org/document/1609475/
-
publication_title: IEEE InternationalElectron Devices
Meeting, 2005. IEDM Technical Digest.
- conference_location: Washington, DC, USA
- conference_dates: 5-5 Dec. 2005
- publication_number: 10701
- is_number: 33791
- publication_year: 2005
- publication_date: 5-5 Dec. 2005
- start_page: 4 pp.
- end_page: 798
- citing_paper_count: 2
- citing_patent_count: 5
- download_count: 326
- insert_date: 20060403
-
index_terms:
-
ieee_terms:
- CMOS image sensors
- Pixel
- CMOS technology
- Logic arrays
- CMOS process
- Voltage
- Optical crosstalk
- Optical saturation
- Optical sensors
- Logic devices
-
dynamic_index_terms:
- Image Sensor
- Camera Sensor
- Random Noise
- Channel Noise
- Open Voltage
- High Saturation
- Fill Factor
- Dark Current
- Epitaxial Layer
- Epilayer
- High Fill Factor
- Temporal Noise
- N-type Layer
- Thermal Noise
- Current Noise
- 3D Simulation
- Geometric Factor
- Pixel Array
- Gate Oxide
- Pixel Scale
- Saturated Pixels
-
isbn_formats:
-
format: Print ISBN,
value: 0-7803-9268-X,
isbnType: Historical
-
authors:
-
Author Name: Chang-Rok Moon
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37087496055
ID: 37087496055
Order: 1
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Jongwan Jung
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37087650581
ID: 37087650581
Order: 2
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Doowon Kwon
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37088667952
ID: 37088667952
Order: 3
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Seok-Ha Lee
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37087391611
ID: 37087391611
Order: 4
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Jae-seob Roh
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37088668815
ID: 37088668815
Order: 5
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Kee-Hyun Paik
Affiliation: Technology Development Team, CAE
Team,Memory Division, Samsung Electronics Company Limited, Yongin
si, Gyeonggi, South Korea
Author URL:
https://ieeexplore.ieee.org/author/37087390837
ID: 37087390837
Order: 6
Author Affiliations:
-
Technology Development Team, CAE Team,Memory Division, Samsung
Electronics Company Limited, Yongin si, Gyeonggi, South Korea
- Technology Development Team, CAE Team
-
Author Name: Doo-Cheol Park
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37087652840
ID: 37087652840
Order: 7
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: HongKi Kim
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37087628606
ID: 37087628606
Order: 8
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Heegeun Jeongc
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37088669491
ID: 37088669491
Order: 9
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Jae-Hwang Sim
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37088668884
ID: 37088668884
Order: 10
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Hyunpil Noh
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37087257744
ID: 37087257744
Order: 11
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Kangbok Lee
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37088666338
ID: 37088666338
Order: 12
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Duckhyung Lee
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37087152811
ID: 37087152811
Order: 13
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
-
Author Name: Kinam Kim
Affiliation: Memory Division, Samsung Electronics
Co., Ltd., Yongin-City, Gyeonggi-Do, KOREA
Author URL:
https://ieeexplore.ieee.org/author/37085932160
ID: 37085932160
Order: 14
Author Affiliations:
-
Memory Division, Samsung Electronics Co., Ltd., Yongin-City,
Gyeonggi-Do, KOREA
Image Sensor
- sensor_type: CMOS
- resolution: 2592x1944
- dynamic_range: 40.4dB
- pixel_size: 1.9µm
- dark_current: <80e-/s at 60°C
Optical Data
- focal_length:
- aperture:
- field_of_view:
- distortion:
Performance Metrics
- frame_rate:
- signal_to_noise_ratio: 40.4dB
- sensitivity: 10000e-/lux*sec
- shutter_speed:
- power_consumption: Low (2.5V operation)
- noise: ~4e-
Applications & Benefits
- cell_imaging:
-
benefits: High saturation, high sensitivity, low dark
current and temporal noise.
Supporting Organizations
- supported_by: Samsung Electronics Co., Ltd.
Manuscript Details
- publication_date: 5-5 Dec. 2005
Relevancy Score
- score: 10
-
missing_fields:
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
Processed JSON Filename
request_0c35e53c-8423-4cf6-b50f-aa805d2911a5-the_features_and_characteristics_of_5m_cmos_image_sensor_with_19spl_times19spl_mumsup_2_pixels.json