Tfetbased Pixel Source Follower Of Cmos Image Sensor For Improved Linearity And High Signaltonoise Ratio

• doi: 10.1109/JSEN.2023.3296518
• title: TFET-Based Pixel Source Follower of CMOS Image Sensor for Improved Linearity and High Signal-to-Noise Ratio
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 3700
• access_type: LOCKED
• content_type: Journals
• abstract: In the mobile industry, pixel shrinkage is becoming increasingly important for achieving high resolution and cost reduction, which requires scaling the source follower (SF) as a short channel. This article presents a comprehensive study of SF gain linearity, which is a major cause of nonlinearity in CMOS image sensor (CIS). We also analyze the effectiveness of using the tunneling field effect transistor (TFET) as a pixel SF through technology computer aided design (TCAD) modeling and simulations. In short channel devices, the output resistance, which used to be a very large value in pixel SF gain, decreases and becomes a key factor in the gain value of pixel SF and CIS nonlinearity. Based on our analysis, we found that TFET SF has superior SF gain value and linearity compared to the conventional NMOS SF due to its larger output resistance and lack of body effect. In addition, TFET offers better immunity to side effects caused by channel shortening and more uniform characteristics in process variations, resulting in very low pixel-to-pixel output variation. These advantages are particularly crucial for device scaling in large arrays, where high resolution and reduced device variation are required. Therefore, we propose the use of TFET as a pixel SF that can provide a high signal-to-noise ratio (SNR) and excellent linearity for mobile CIS applications.
• article_number: 10190327
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10190327
• html_url: https://ieeexplore.ieee.org/document/10190327/
• abstract_url: https://ieeexplore.ieee.org/document/10190327/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 10235271
• publication_year: 2023
• publication_date: 1 Sept.1, 2023
• start_page: 19239
• end_page: 19244
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 789
• insert_date: 20230721
• index_terms:
  • ieee_terms:
    • MOS devices
    • Linearity
    • TFETs
    • Tunneling
    • Signal to noise ratio
    • Sensors
    • Logic gates
  • author_terms:
    • CMOS image sensor (CIS)
    • linearity
    • photon response nonuniformity (PRNU)
    • signal-to-noise ratio (SNR)
    • source follower (SF)
    • tunneling field effect transistor (TFET)
  • dynamic_index_terms:
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Pixel Source Follower
    • Output Variables
    • Yield Variability
    • Field-effect Transistors
    • Gain Values
    • Output Resistance
    • Short Channel
    • Light Intensity
    • Light Absorption
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Channel Length
    • Good Linearity
    • Transconductance
    • Conductive Transfer
    • High Linearity
    • Tunnel Junction
    • Low Illumination
    • High Illumination
    • Gate Length
    • Pixel Pitch
    • Conversion Gain
    • PIN Photodiode
• authors:
  • Author Name: Haewon Lee
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37089495893
    ID: 37089495893
    Order: 1
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Ilgu Yun
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37270533800
    ID: 37270533800
    Order: 2
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: n/a
• dynamic_range: n/a
• pixel_size: <1 µm
• dark_current: n/a

Optical Data

• focal_length: n/a
• aperture: n/a
• field_of_view: n/a
• distortion: n/a

Performance Metrics

• frame_rate: n/a
• signal_to_noise_ratio: high
• sensitivity: n/a
• shutter_speed: n/a
• power_consumption: n/a
• noise: low

Applications & Benefits

• cell_imaging: Used in smartphones, medical devices, and automotive systems
• benefits: Offers improved linearity, high signal-to-noise ratio, and reduced device variation for high-resolution applications.

Supporting Organizations

• supported_by: IC Design Education Center (IDEC)

Manuscript Details

• publication_date: 1 Sept.1, 2023

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_460e3fac-f2a9-4059-8f0d-925c967c0df5-tfetbased_pixel_source_follower_of_cmos_image_sensor_for_improved_linearity_and_high_signaltonoise_ratio.json