Test Results Of Various Cmos Image Sensor Pixels

• doi: 10.1109/CCECE.2005.1557381
• title: Test results of various CMOS image sensor pixels
• publisher: IEEE
• isbn: 0-7803-8885-2
• issn: 0840-7789
• rank: 3756
• access_type: LOCKED
• content_type: Conferences
• abstract: Today, CMOS image sensors are increasingly used in consumer products. Digital cameras, Web cameras, optical mouses, and smart sensors are some examples. One of the most used CMOS image sensor architectures is based on the active pixel sensor (APS). In order to understand more design tradeoffs, a prototype chip was designed to evaluate different pixel architectures. This paper describes the prototype chip and the test results. The prototype chip is composed of 8 different pixels and a 3-to-8 row decoder. There are two different APS architectures, 3 transistor or 4 transistor. The 8 different pixels are based on the 2 APS architectures with some variations. These variations are 2 types of reset transistor, N/sub mos/ or P/sub mos/, and 2 types of photodiodes, n/sup +/ - p/sub sub/ and n/sub well/ - p/sub sub/. The prototype chip was manufactured in a standard 3.3 V 0.35 /spl mu/m 1-poly 4-metal CMOS process. The row decoder was designed using a pass transistor network, inverters, and pull-up transistors. The test results show that for white light, n/sup +/ - p/sub sub/ photodiodes and n/sub well/ - p/sub sub/ photodiodes have approximately the same response. Also, 4 transistor pixels have better response, but the voltage range for linear operation is smaller. 3 transistor pixels have larger voltage range for linear operation and less dark current. The results also confirm that the output of the pixels is inversely proportional to the distance of the light source.
• article_number: 1557381
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1557381
• html_url: https://ieeexplore.ieee.org/document/1557381/
• abstract_url: https://ieeexplore.ieee.org/document/1557381/
• publication_title: Canadian Conference on Electrical and Computer Engineering, 2005.
• conference_location: Saskatoon, SK, Canada
• conference_dates: 1-4 May 2005
• publication_number: 10384
• is_number: 33117
• publication_year: 2005
• publication_date: 1-4 May 2005
• start_page: 2017
• end_page: 2020
• citing_paper_count: 3
• citing_patent_count: 1
• download_count: 434
• insert_date: 20060103
• index_terms:
  • ieee_terms:
    • Testing
    • CMOS image sensors
    • Pixel
    • Prototypes
    • Photodiodes
    • Digital cameras
    • Intelligent sensors
    • Decoding
    • Voltage
    • Consumer products
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Sensor Pixel
    • Light Source
    • Digital Camera
    • Photodiode
    • Inverter
    • Dark Current
    • Smart Sensors
    • Web Camera
    • USB Camera
    • Slope Of Curve
    • Steep Slopes
    • Digital Signal
    • Printed Circuit Board
    • Halogen Lamp
    • Halogen Light
    • Parasitic Capacitance
    • P-n Junction
    • Current Amount
    • Current Quantity
    • Digital Input
• isbn_formats:
  • format: Print ISBN, value: 0-7803-8885-2, isbnType: Historical
• authors:
  • Author Name: D.C.-Y. Li
    Affiliation: Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, Canada
    Author URL: https://ieeexplore.ieee.org/author/37087665989
    ID: 37087665989
    Order: 1
    Author Affiliations:
    • Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, Canada
  • Author Name: V.C. Gaudet
    Affiliation: Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, Canada
    Author URL: https://ieeexplore.ieee.org/author/37271661800
    ID: 37271661800
    Order: 2
    Author Affiliations:
    • Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB, Canada
  • Author Name: A. Basu
    Affiliation: Department of Computing Science, University of Alberta, Edmonton, AB, Canada
    Author URL: https://ieeexplore.ieee.org/author/37272835400
    ID: 37272835400
    Order: 3
    Author Affiliations:
    • Department of Computing Science, University of Alberta, Edmonton, AB, Canada

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 6 µm by 6 µm for photodiodes; pixel sizes vary
• dark_current: Less in P mos reset and 3 transistor pixels compared to N mos reset and 4 transistor pixels; specific values not provided in the paper (effect takes time with no illumination around 5ms-100ms depending on pixel configuration).

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• power_consumption: Less than 3.3mW, simulated power consumption of the core is about 0.9mW
• noise: Specific noise levels not provided; discussed in context of dark current and integration time.

Applications & Benefits

• cell_imaging: Not specified
• benefits: Used in various consumer products such as digital cameras, web cameras, optical mice, and smart sensors.

Supporting Organizations

• supported_by: Canadian Microelectronics Corporation (CMC), Natural Sciences and Engineering Research Council of Canada (NSERC)

Manuscript Details

• publication_date: 1-4 May 2005

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

request_6e8a9551-8d27-4627-8aef-f8a2863fae85-test_results_of_various_cmos_image_sensor_pixels.json