Temperature Effects On Feedforward Voltage In Standard Cmos Pinned Photodiodes

• doi: 10.1109/TED.2016.2544814
• title: Temperature Effects on Feedforward Voltage in Standard CMOS Pinned Photodiodes
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 3742
• access_type: LOCKED
• content_type: Journals
• abstract: The dynamic range and the signal-to-noise ratio of a CMOS image sensor depend on the saturation level of the photodiodes. A very high charge handling capacity or the full well of the photodiode is desired. The thermionic emission of the electrons from the photodiode to the collection node of the pixel reduces the full well capacity of the photodiode. The effect of operating temperature on this thermionic effect on full well capacity is studied in this paper. As the temperature increases, electrons gain thermal energy and are able to overcome the potential barrier between the photodiode and the collection node. This is observed as an increased feedforward voltage. The feedforward voltage shows a logarithmic relationship with temperature changes. The rate of change of the feedforward voltage is not uniform and depends on the position of the quasi-Fermi level. For lower temperature ranges, the change in the feedforward voltage observed is linear, while, for higher temperature ranges, the change is logarithmic in nature.
• article_number: 7445842
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7445842
• html_url: https://ieeexplore.ieee.org/document/7445842/
• abstract_url: https://ieeexplore.ieee.org/document/7445842/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 7457179
• publication_year: 2016
• publication_date: May 2016
• start_page: 1963
• end_page: 1968
• citing_paper_count: 11
• citing_patent_count: 0
• download_count: 843
• insert_date: 20160401
• index_terms:
  • ieee_terms:
    • Photodiodes
    • Feedforward neural networks
    • Electric potential
    • Temperature measurement
    • CMOS integrated circuits
    • Temperature distribution
    • Temperature sensors
  • author_terms:
    • Barrier height
    • charge transfer
    • CMOS image sensor
    • feedforward voltage
    • pinned photodiode.
    • Barrier height
    • charge transfer
    • CMOS image sensor
    • feedforward voltage
    • pinned photodiode
  • dynamic_index_terms:
    • Standard CMOS
    • PIN Photodiode
    • Voltage Feedforward
    • Increase In Temperature
    • Temperature Changes
    • Thermal Energy
    • Low Temperature Range
    • Thermionic Emission
    • Richardson Constant
    • quasi-Fermi Level
    • Logarithm
    • Log Transformed
    • Logarithmic Transformation
    • Electron Transfer
    • Kinetic Energy
    • Boltzmann Constant
    • Conduction Band
    • Absolute Temperature
    • Temperature In Kelvin
    • Thermodynamic Temperature
    • Electron Charge
    • Elementary Charge
    • Fermi Level
    • Barrier Height
    • Voltage Variation
    • Thermal Power Plants
    • Thermal Generation
    • Thermal Plants
    • Electron Kinetic Energy
    • Reset Voltage
    • Minimum Barrier
• authors:
  • Author Name: Mukul Sarkar
    Affiliation: Electrical Engineering Department, IIT Delhi, New Delhi, India
    Author URL: https://ieeexplore.ieee.org/author/37394227700
    ID: 37394227700
    Order: 1
    Author Affiliations:
    • Electrical Engineering Department, IIT Delhi, New Delhi, India
  • Author Name: Bernhard Büttgen
    Affiliation: Heptagon Advanced Robotics, Rüschlikon, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37595685500
    ID: 37595685500
    Order: 2
    Author Affiliations:
    • Heptagon Advanced Robotics, Rüschlikon, Switzerland
  • Author Name: Albert J. P. Theuwissen
    Affiliation: Harvest Imaging, Bree, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 3
    Author Affiliations:
    • Harvest Imaging, Bree, Belgium
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, The Netherlands

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 15 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Used in CMOS image sensors for various applications including smartphones, medical devices, and automotive systems.
• benefits: High dynamic range and signal-to-noise ratio, improved charge handling capability.

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: May 2016

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • supported_by

Processed JSON Filename

request_3b3b2754-ec8b-4979-a74f-f492daf19357-temperature_effects_on_feedforward_voltage_in_standard_cmos_pinned_photodiodes.json