Subthz Sensor Array With Embedded Signal Processing In 90 Nm Cmos Technology

• doi: 10.1109/JSEN.2013.2291316
• title: Sub-THz Sensor Array With Embedded Signal Processing in 90 nm CMOS Technology
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 3663
• access_type: LOCKED
• content_type: Journals
• abstract: The architecture and the operation of a sub-THz sensor array are presented, which have been implemented in standard 90 nm CMOS technology. The integrated sensor array is arranged around of 12 silicon field effect plasma wave detectors with integrated planar antennas. The received signals are further processed by pre-amplifiers, analog to digital converters, and a time shared digital domain lock-in amplifier. The system automatically locks to external modulation and provides standard digital streaming output. Instead of building a uniform array, seven different antenna types with various polarization properties (horizontal and vertical linear; left and right handed circular polarization) and spectral responsivity have been integrated. The sensors altogether provide broadband response from 0.25 to 0.75 THz. The peak amplified responsivity of the sensors is 185 kV/W at 365 GHz and at the detectivity maximum, the noise equivalent power (NEP) is near to 40 pW/√Hz. Under nonzero drain current, the peak sensitivity rises above 1.2 MV/W with a moderate NEP ~ 200 pW/ Hz at 50 nA source-drain current. Application example is provided as a multi-wavelength transmission imaging case study.
• article_number: 6670039
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6670039
• html_url: https://ieeexplore.ieee.org/document/6670039/
• abstract_url: https://ieeexplore.ieee.org/document/6670039/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 6841675
• publication_year: 2014
• publication_date: Aug. 2014
• start_page: 2432
• end_page: 2441
• citing_paper_count: 18
• citing_patent_count: 0
• download_count: 1032
• insert_date: 20131119
• index_terms:
  • ieee_terms:
    • Detectors
    • Field effect transistors
    • Noise
    • Metals
    • Broadband antennas
  • author_terms:
    • Terahertz
    • focal plane detector array
    • lock-in amplifier
    • plasma-wave detector
    • CMOS
    • Terahertz
    • focal plane detector array
    • lock-in amplifier
    • plasma-wave detector
    • CMOS
  • dynamic_index_terms:
    • Sensor Array
    • CMOS Technology
    • Broadband
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Lock-in Amplifier
    • Drain Current
    • Types Of Antennas
    • Right-handed Circularly Polarized
    • Plasma Waves
    • Drain-source Current
    • Source-drain Current
    • Noise Equivalent Power
    • High Resistance
    • High Impedance
    • Modulation Frequency
    • Low Noise
    • Field-effect Transistors
    • Thermal Noise
    • Current Noise
    • Metal Layer
    • Sensor Response
    • Power Meter
    • Antenna Size
    • EM Simulation
    • Digital Circuits
    • Digital Circuitry
    • Lock-in Detection
    • Lower Cut-off Frequency
    • Amplifier Input
    • Antenna Structure
    • Flicker Noise
    • Open Drains
    • Top Metal Layer
    • Bolometer
• authors:
  • Author Name: Gergely Károlyi
    Affiliation: Department of Broadband Infocommunications and Electromagnetic Theory, Budapest University of Technology and Economics, Budapest, Hungary
    Author URL: https://ieeexplore.ieee.org/author/37397028100
    ID: 37397028100
    Order: 1
    Author Affiliations:
    • Department of Broadband Infocommunications and Electromagnetic Theory, Budapest University of Technology and Economics, Budapest, Hungary
  • Author Name: Domonkos Gergelyi
    Affiliation: Computer and Automation Research Institute, Hungarian Academy of Sciences, Budapest, Hungary
    Author URL: https://ieeexplore.ieee.org/author/37397982800
    ID: 37397982800
    Order: 2
    Author Affiliations:
    • Computer and Automation Research Institute, Hungarian Academy of Sciences, Budapest, Hungary
  • Author Name: Péter Földesy
    Affiliation: Faculty of Information Technology, Péter Pázmány Catholic University, Budapest, Hungary
    Author URL: https://ieeexplore.ieee.org/author/37332040400
    ID: 37332040400
    Order: 3
    Author Affiliations:
    • Faculty of Information Technology, Péter Pázmány Catholic University, Budapest, Hungary

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: not specified
• benefits: enables digital imaging in a variety of applications such as smartphones, medical devices, and automotive systems.

Supporting Organizations

• supported_by: Hungarian National Development Agency, Hungarian Scientific Research, János Bolyai Research Scholarship of the Hungarian Academy of Sciences

Manuscript Details

• publication_date: Aug. 2014

Relevancy Score

• score: 2
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

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