Subthz High Gain Wideband Low Noise Amplifiers In 90Nm Rf Cmos Technology

• doi: 10.1109/ICECS.2010.5724482
• title: Sub-THz high gain wide-band low noise amplifiers in 90nm RF CMOS technology
• publisher: IEEE
• isbn: 978-1-4244-8156-9
• issn:
• partnum: 10EX4661
• rank: 3664
• access_type: LOCKED
• content_type: Conferences
• abstract: In the future, CMOS technology is expected to enable low-cost sub-THz applications such as high data-rate communication links, passive and active imaging and sensor systems, and instrumentation and measurements equipment. This paper presents key design techniques for different CMOS LNA topologies with over 20 GHz bandwidth ranging from 90 GHz to 110 GHz. The proposed LNA topologies are, the three-stage cascode RF NMOS configuration and four-stage Common Gate followed by Common Source configuration. Simulation results show that the first topology can achieve a peak gain of 23.5 dB at 92.1 GHz with a 3-dB bandwidth of 25 GHz, and a noise figure less than 5.5 dB over the entire bandwidth. The achieved peak gain from the second topology is 23.2 dB at 105 GHz with a 3-dB bandwidth of 15 GHz and a noise figure less than 6.1 dB over the entire bandwidth. The LNAs are designed in 90 nm RF CMOS and consume 27 mW/40 mW for topology I/topology II respectively.
• article_number: 5724482
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5724482
• html_url: https://ieeexplore.ieee.org/document/5724482/
• abstract_url: https://ieeexplore.ieee.org/document/5724482/
• publication_title: 2010 17th IEEE International Conference on Electronics, Circuits and Systems
• conference_location: Athens, Greece
• conference_dates: 12-15 Dec. 2010
• publication_number: 5720492
• is_number: 5724436
• publication_year: 2010
• publication_date: 12-15 Dec. 2010
• start_page: 174
• end_page: 177
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 666
• insert_date: 20110307
• index_terms:
  • ieee_terms:
    • CMOS integrated circuits
    • Voltage-controlled oscillators
    • CMOS technology
    • Logic gates
  • dynamic_index_terms:
    • CMOS Technology
    • 90-nm CMOS
    • 90-nm CMOS Technology
    • Simulation Results
    • Noise Figure
    • Peak Gain
    • GHz Bandwidth
    • Entire Bandwidth
    • Frequency Band
    • Transmission Line
    • Cadence
    • Circuit Design
    • Active Devices
    • Device Size
    • Electromagnetic Simulation
    • CMOS Process
    • Output Impedance
    • Entire Band
    • Input Matching
    • Transistor Size
    • Transistor Count
    • Output Matching
• isbn_formats:
  • format: CD, value: 978-1-4244-8156-9, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-8155-2, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-8157-6, isbnType: New-2005
• authors:
  • Author Name: Amneh Akour
    Affiliation: ElectroScience Lab/VLSI Laboratory, Ohio State Uinversity, Columbus, OH, USA
    Author URL: https://ieeexplore.ieee.org/author/37541169800
    ID: 37541169800
    Order: 1
    Author Affiliations:
    • ElectroScience Lab/VLSI Laboratory, Ohio State Uinversity, Columbus, OH, USA
  • Author Name: Waleed Khalil
    Affiliation: ElectroScience Lab/VLSI Laboratory, Ohio State Uinversity, Columbus, OH, USA
    Author URL: https://ieeexplore.ieee.org/author/37278870600
    ID: 37278870600
    Order: 2
    Author Affiliations:
    • ElectroScience Lab/VLSI Laboratory, Ohio State Uinversity, Columbus, OH, USA
  • Author Name: Mohammed Ismail
    Affiliation: ElectroScience Lab/VLSI Laboratory, Ohio State Uinversity, Columbus, OH, USA
    Author URL: https://ieeexplore.ieee.org/author/37276742100
    ID: 37276742100
    Order: 3
    Author Affiliations:
    • ElectroScience Lab/VLSI Laboratory, Ohio State Uinversity, Columbus, OH, USA

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• power_consumption: 27mW/40mW for different topologies

Applications & Benefits

• cell_imaging: Not specified
• benefits: Not specified

Supporting Organizations

• supported_by: The Ohio State University, ElectroScience Lab, VLSI Lab

Manuscript Details

• publication_date: 12-15 Dec. 2010

Relevancy Score

• score: 3
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

request_04eeb3aa-520f-4184-a0f0-4613acf8d0c1-subthz_high_gain_wideband_low_noise_amplifiers_in_90nm_rf_cmos_technology.json