Subelectron Cis Noise Analysis In 65 Nm Process

• doi: 10.1109/ICECS.2016.7841263
• title: Sub-electron CIS noise analysis in 65 nm process
• publisher: IEEE
• isbn: 978-1-5090-6114-3
• issn:
• rank: 3665
• access_type: LOCKED
• content_type: Conferences
• abstract: For a 4T pixel-based CMOS image sensors (CIS) readout chain, with column-level amplification and CDS, we show that the input-referred total noise in a standard 65 nm process can be reduced to 0.37 e-rms. Based on transient noise simulation using Eldo, the deep sub-electron noise performance have been reached using only circuit techniques and optimal device choices. The simulation results have been favorably compared with analytical noise calculations. The shot noise associated to the gate tunneling current has been simulated and the possibility of photoelectron counting in this 65 nm process has been demonstrated.
• article_number: 7841263
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7841263
• html_url: https://ieeexplore.ieee.org/document/7841263/
• abstract_url: https://ieeexplore.ieee.org/document/7841263/
• publication_title: 2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)
• conference_location: Monte Carlo, Monaco
• conference_dates: 11-14 Dec. 2016
• publication_number: 7829200
• is_number: 7841114
• publication_year: 2016
• publication_date: 11-14 Dec. 2016
• start_page: 560
• end_page: 563
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 529
• insert_date: 20170206
• index_terms:
  • ieee_terms:
    • 1/f noise
    • Thermal noise
    • Logic gates
    • Transistors
    • Capacitance
    • Bandwidth
    • Transient analysis
  • author_terms:
    • CMOS
    • image sensors
    • 1/f noise
    • thermal noise
    • shot noise
    • deep sub-electron noise
    • photoelectron counting
  • dynamic_index_terms:
    • Noise Analysis
    • Simulation Results
    • Photoelectron
    • Photoelectric
    • Shot Noise
    • Poisson Noise
    • Transient Simulation
    • Noise Performance
    • Simulated Noise
    • Total Noise
    • Tunneling Current
    • Input-referred Noise
    • Noise Sources
    • Downscaling
    • Thermal Noise
    • Current Noise
    • Technology Node
    • Control Bandwidth
    • Flicker Noise
    • PIN Photodiode
    • Simulation Chain
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5090-6114-3, isbnType: New-2005
  • format: USB ISBN, value: 978-1-5090-6112-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5090-6113-6, isbnType: New-2005
• authors:
  • Author Name: Raffaele Capoccia
    Affiliation: École Poly technique Fédérale de Lausanne (EPFL), Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37085498112
    ID: 37085498112
    Order: 1
    Author Affiliations:
    • École Poly technique Fédérale de Lausanne (EPFL), Switzerland
  • Author Name: Assim Boukhayma
    Affiliation: École Poly technique Fédérale de Lausanne (EPFL), Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37085418249
    ID: 37085418249
    Order: 2
    Author Affiliations:
    • École Poly technique Fédérale de Lausanne (EPFL), Switzerland
  • Author Name: Christian Enz
    Affiliation: École Poly technique Fédérale de Lausanne (EPFL), Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37269686200
    ID: 37269686200
    Order: 3
    Author Affiliations:
    • École Poly technique Fédérale de Lausanne (EPFL), Switzerland

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: 0.37 e−rms

Applications & Benefits

• cell_imaging: Not specified
• benefits: Deep sub-electron noise performance for low-light applications.

Supporting Organizations

• supported_by: École Polytechnique Fédérale de Lausanne (EPFL)

Manuscript Details

• publication_date: 11-14 Dec. 2016

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • applications_benefits.cell_imaging
  • applications_benefits.benefits
  • manuscript_details.publication_date

Processed JSON Filename

request_11f70dc4-d370-4ca1-8927-b32357c0c922-subelectron_cis_noise_analysis_in_65_nm_process.json