Sub1v Cmos Image Sensor Using Timebased Readout Circuit

• doi: 10.1109/TED.2009.2035194
• title: Sub-1-V CMOS Image Sensor Using Time-Based Readout Circuit
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 3662
• access_type: LOCKED
• content_type: Journals
• abstract: This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13- ¿m standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.
• article_number: 5350740
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5350740
• html_url: https://ieeexplore.ieee.org/document/5350740/
• abstract_url: https://ieeexplore.ieee.org/document/5350740/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 5357518
• publication_year: 2010
• publication_date: Jan. 2010
• start_page: 222
• end_page: 227
• citing_paper_count: 13
• citing_patent_count: 0
• download_count: 971
• insert_date: 20091208
• index_terms:
  • ieee_terms:
    • Pixel
    • Partial discharges
    • Dynamic range
    • Logic gates
    • Voltage measurement
    • CMOS image sensors
    • Noise
  • author_terms:
    • CMOS active pixel sensor
    • CMOS image sensor (CIS)
    • low power
    • low voltage
    • time-based readout (TBR)
  • dynamic_index_terms:
    • Readout Circuit
    • Dynamic Range
    • Low Voltage
    • Gate Electrode
    • Sufficient Range
    • Power Supply Voltage
    • Standard CMOS
    • Voltage Drop
    • Potential Drop
    • IR Drop
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Negative Bias
    • Wireless Sensor Networks
    • Turn Off
    • CMOS Process
    • Signal Points
    • Exposure Phase
    • Reset Voltage
    • Dark Illumination
    • Pulsewidth Modulation Scheme
    • Pulsewidth Modulation Strategy
• authors:
  • Author Name: Kunhee Cho
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37675250600
    ID: 37675250600
    Order: 1
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Dongmyung Lee
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/38184394200
    ID: 38184394200
    Order: 2
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Jeonghwan Lee
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37578616100
    ID: 37578616100
    Order: 3
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Gunhee Han
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37270066200
    ID: 37270066200
    Order: 4
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: 192 x 128 pixels
• dynamic_range: 54.2 dB
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 15 fps
• power_consumption: 1.6 μW with 0.75-V power-supply voltage

Applications & Benefits

• cell_imaging: Suitable for low-voltage applications such as wireless sensor networks and biomedical systems.
• benefits: Operation under sub-1-V power supply, sufficient dynamic range in low voltage.

Supporting Organizations

• supported_by: Ministry of Knowledge Economy, Korea; Samsung Electronics Company, Ltd.

Manuscript Details

• publication_date: Jan. 2010

Relevancy Score

• score: 10
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

request_0af454be-9a1a-4109-ae0e-62dc1dc57572-sub1v_cmos_image_sensor_using_timebased_readout_circuit.json