Study On Optimization Of Image Lag Process Based On 4T Cmos Image Sensor

• doi: 10.1109/ICIBA56860.2023.10165307
• title: Study on optimization of image lag process based on 4T CMOS image sensor
• publisher: IEEE
• isbn: 978-1-6654-9080-1
• issn:
• rank: 3654
• access_type: LOCKED
• content_type: Conferences
• abstract: The trap energy level and electric potential deviations caused by the presence of non-ideal effects in CMOS image sensor pixel cells during the manufacturing process often lead to incomplete charge transfer during the transfer of photo-generated signal charge from the PPD to the FD, resulting in image lag from the residual charge trapped in the PD, thus affects the sensor imaging effect. The commonest method to improve the image lag phenomenon is to optimize individual process parameters. In this paper, a more systematic process parameter optimization method which is simulated and optimized for the image lag aimed at two aspects: the threshold voltage implantation adjustment of TG channel and the implantation dose of N-type impurities in PPD is proposed. The optimal process state and operating conditions for minimizing image drag are obtained as follows: TG channel implantation dose 8.0e12 cm-2 and PPD N impurity implantation dose 3.0e12 cm-2. The research method in this paper provides theoretical guidelines for optimizing and improving the performance of 4T pixel design for CMOS image sensor.
• article_number: 10165307
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10165307
• html_url: https://ieeexplore.ieee.org/document/10165307/
• abstract_url: https://ieeexplore.ieee.org/document/10165307/
• publication_title: 2023 IEEE 3rd International Conference on Information Technology, Big Data and Artificial Intelligence (ICIBA)
• conference_location: Chongqing, China
• conference_dates: 26-28 May 2023
• publication_number: 10164832
• is_number: 10164812
• publication_year: 2023
• publication_date: 26-28 May 2023
• start_page: 846
• end_page: 850
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 475
• insert_date: 20230706
• index_terms:
  • ieee_terms:
    • Systematics
    • Manufacturing processes
    • Impurities
    • Simulation
    • Optimization methods
    • CMOS image sensors
    • Threshold voltage
  • author_terms:
    • 4T CMOS image sensor
    • low image lag
    • process optimization
    • implantation tuning
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Manufacturing Process
    • Process Parameters
    • Charged Residues
    • Method In This Paper
    • Methods Paper
    • Optimal Process Parameters
    • Photo-generated Charge
    • Non-ideal Effects
    • Simulation Results
    • Bottom Of The Wells
    • Bottom Of Each Well
    • Potential Well
    • Storage Nodes
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-6654-9080-1, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-6654-9079-5, isbnType: New-2005
• authors:
  • Author Name: Kai Zhang
    Affiliation: Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
    Author URL: https://ieeexplore.ieee.org/author/37089899887
    ID: 37089899887
    Order: 1
    Author Affiliations:
    • Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
  • Author Name: Ting Li
    Affiliation: Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
    Author URL: https://ieeexplore.ieee.org/author/37089897042
    ID: 37089897042
    Order: 2
    Author Affiliations:
    • Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
    • Key Laboratory of National Defense Science and Technology for Irradiation Resistant Integrated Circuits, Xi’an, Shaanxi, China
  • Author Name: Weidong Xu
    Affiliation: Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
    Author URL: https://ieeexplore.ieee.org/author/37089901255
    ID: 37089901255
    Order: 3
    Author Affiliations:
    • Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
  • Author Name: Jie He
    Affiliation: Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
    Author URL: https://ieeexplore.ieee.org/author/37089899294
    ID: 37089899294
    Order: 4
    Author Affiliations:
    • Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
    • Key Laboratory of National Defense Science and Technology for Irradiation Resistant Integrated Circuits, Xi’an, Shaanxi, China
  • Author Name: Haisong Li
    Affiliation: Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
    Author URL: https://ieeexplore.ieee.org/author/37089897399
    ID: 37089897399
    Order: 5
    Author Affiliations:
    • Xi’an Institute of Microelectronics Technology, Xi’an, Shaanxi, China
    • Key Laboratory of National Defense Science and Technology for Irradiation Resistant Integrated Circuits, Xi’an, Shaanxi, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Enabled digital imaging in applications such as smartphones and medical devices; crucial for automotive systems as well.
• benefits: Improvements in pixel structure and charge transfer efficiency reduce image lag, enhance sensor performance and overall image quality.

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: 26-28 May 2023

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • supported_by
  • publication_date

Processed JSON Filename

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