Study On Low Power Backside Deep Trench Isolation Etching On Stackbsi Cmos Image Sensor

• doi: 10.1109/CSTIC52283.2021.9461581
• title: Study on Low Power Back-Side Deep Trench Isolation Etching on Stack-BSI CMOS Image Sensor
• publisher: IEEE
• isbn: 978-1-6654-4946-5
• issn:
• rank: 3650
• access_type: LOCKED
• content_type: Conferences
• abstract: The leakage of pixel is a significant index to characterize quality of CMOS image sensor (CIS), which is classified into white pixel (WP) and dark current (DC) in the yield test. It is widely observed by researches that WP and DC are induced by metal contamination or plasma damage. And many solutions are attempted in order to reduce WP and DC. One of a popular method is, for the back-side illuminated (BSI) product, deep trench isolation (DTI) with high-K film by holes accumulation layer formation. However, this passivation film could not be strong enough for pixel protection if the deep trench etching is produced by high power process or unreasonable integration. So deep study is excused by this paper on both lower down the plasma damage and remove plasma damaged region. And the benefit result of experiment is shown finally.
• article_number: 9461581
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9461581
• html_url: https://ieeexplore.ieee.org/document/9461581/
• abstract_url: https://ieeexplore.ieee.org/document/9461581/
• publication_title: 2021 China Semiconductor Technology International Conference (CSTIC)
• conference_location: Shanghai, China
• conference_dates: 14-15 March 2021
• publication_number: 9461249
• is_number: 9461251
• publication_year: 2021
• publication_date: 14-15 March 2021
• start_page: 1
• end_page: 3
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 1574
• insert_date: 20210629
• index_terms:
  • ieee_terms:
    • Metals
    • CMOS image sensors
    • Etching
    • Silicon
    • Plasmas
    • Indexes
    • High-k dielectric materials
  • dynamic_index_terms:
    • Etching
    • Deep Etching
    • Deep Trench
    • Deep Trench Isolation
    • Damaged Region
    • White Pixels
    • Passive Film
    • Aspect Ratio
    • Photodiode
    • Quantum Efficiency
    • Reactive Ion Etching
    • Reactive-ion Etching
    • Bulk Silicon
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-6654-4946-5, isbnType: New-2005
  • format: USB ISBN, value: 978-1-6654-4944-1, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-6654-4945-8, isbnType: New-2005
• authors:
  • Author Name: Zhuo Yin
    Affiliation: Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37088900658
    ID: 37088900658
    Order: 1
    Author Affiliations:
    • Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
  • Author Name: Jianjun Li
    Affiliation: Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37088901168
    ID: 37088901168
    Order: 2
    Author Affiliations:
    • Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
  • Author Name: Xinruo Su
    Affiliation: Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37088903588
    ID: 37088903588
    Order: 3
    Author Affiliations:
    • Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
  • Author Name: Dejing Ma
    Affiliation: Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37088902531
    ID: 37088902531
    Order: 4
    Author Affiliations:
    • Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
  • Author Name: Hanming Wu
    Affiliation: School of Microelectronics, Zhejiang University, Hangzhou, China
    Author URL: https://ieeexplore.ieee.org/author/37279672200
    ID: 37279672200
    Order: 5
    Author Affiliations:
    • School of Microelectronics, Zhejiang University, Hangzhou, China
  • Author Name: Xing Zhang
    Affiliation: Semiconductor Manufacturing International Corporation (SMIC), Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37279335000
    ID: 37279335000
    Order: 6
    Author Affiliations:
    • Semiconductor Manufacturing International Corporation (SMIC), Beijing, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Used in a variety of applications such as smartphones, medical devices, and automotive systems, providing benefits of low noise, high sensitivity, and efficient power consumption.
• benefits: Enabling digital imaging in various fields.

Supporting Organizations

• supported_by: Semiconductor Manufacturing International Corporation (SMIC), Peking University, Zhejiang University.

Manuscript Details

• publication_date: 14-15 March 2021

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_01616cd9-c129-4d6f-bf15-6fc8140b9e25-study_on_low_power_backside_deep_trench_isolation_etching_on_stackbsi_cmos_image_sensor.json