Spice Models Of Fluorineionirradiated Cmos Devices
- doi: 10.1109/TED.2007.901240
-
title: SPICE Models of Fluorine-Ion-Irradiated CMOS
Devices
- publisher: IEEE
- isbn:
- issn: 1557-9646
- rank: 3493
- access_type: LOCKED
- content_type: Journals
-
abstract: CMOS image sensors are attractive for space
applications due to their low-power and system-on-chip features. The
typical active pixel sensor (APS) is composed of a photodiode and
several transistors. Using Fluorine +7 ions with an energy of 17 MeV,
the effects of radiation are investigated on photodiodes and transistors
manufactured using a standard 0.35-mum CMOS process. Simulation results
show that the range of these ions overlaps with the active region of the
device. Thus, the proximity effect of the ions on the performance of the
device can be important. The tested photodiode showed a leakage current
increase after it was irradiated with fluorine ions. The ideality factor
of recombination current is observed to increase up to 4. Moreover, an
increase in leakage current and absolute threshold voltage was observed
in fluorine-ion-irradiated nMOS and pMOS transistors. In this paper,
behavioral SPICE models are developed to analyze the contribution of
these components to an overall increase in dark current of a CMOS APS.
- article_number: 4277968
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4277968
-
html_url:
https://ieeexplore.ieee.org/document/4277968/
-
abstract_url:
https://ieeexplore.ieee.org/document/4277968/
-
publication_title: IEEE Transactions on Electron
Devices
- conference_location:
- conference_dates:
- publication_number: 16
- is_number: 4277948
- publication_year: 2007
- publication_date: Aug. 2007
- start_page: 1963
- end_page: 1971
- citing_paper_count: 1
- citing_patent_count: 0
- download_count: 256
- insert_date: 20070723
-
index_terms:
-
ieee_terms:
- Ions
- Photodiodes
- Semiconductor device modeling
- CMOS integrated circuits
- Transistors
- MOSFETs
- Radiation effects
-
author_terms:
- CMOS images sensors
- heavy ion
- MOS transistor
- photodiode
- radiation effects
- SPICE model
-
dynamic_index_terms:
- SPICE Model
- Effects Of Radiation
- Effects Of Radiotherapy
- Effect Of Irradiation
- Current Voltage
- Effect Of Ions
- Image Sensor
- Camera Sensor
- Threshold Voltage
- Dark Current
- CMOS Process
- Ideality Factor
- Absolute Voltage
- Leakage Current Increases
- High Voltage
- Higher Tendency
- Voltage-gated
- Gate Voltage
- Energy Range
- Heavy Ions
- Heavy-ion Collisions
- Metal Layer
- Dielectric Layer
- Insulation Layer
- Gating Function
- Box Function
- Rectangular Function
- Pulse Function
- P-n Junction
- Oxide Capacitance
- Threshold Voltage Shift
- Linear Energy Transfer
- Decrease In Mobility
- Diode Characteristics
- Carrier Generation
- Multiple Exciton Generation
- Carrier Multiplication
- Range Of Ions
- Stopping And Range Of Ions In Matter
- Neutron Irradiation
- Neutron Radiation
- Faraday Cup
- Incident Ions
-
authors:
-
Author Name: Henok T. Mebrahtu
Affiliation: Department of Physics, Duke
University, Durham, NC, USA
Author URL:
https://ieeexplore.ieee.org/author/37938138400
ID: 37938138400
Order: 1
Author Affiliations:
- Department of Physics, Duke University, Durham, NC, USA
-
Author Name: Wei Gao
Affiliation: Computer Science and Engineering
Department, York University, Toronto, ONT, Canada
Author URL:
https://ieeexplore.ieee.org/author/37401574600
ID: 37401574600
Order: 2
Author Affiliations:
-
Computer Science and Engineering Department, York University,
Toronto, ONT, Canada
-
Author Name: William E. Kieser
Affiliation: Iso Trace Laboratory, University of
Toronto, Toronto, ONT, Canada
Author URL:
https://ieeexplore.ieee.org/author/37938135300
ID: 37938135300
Order: 3
Author Affiliations:
-
Iso Trace Laboratory, University of Toronto, Toronto, ONT,
Canada
-
Author Name: Xiaolei L. Zhao
Affiliation: Iso Trace Laboratory, University of
Toronto, Toronto, ONT, Canada
Author URL:
https://ieeexplore.ieee.org/author/37935276900
ID: 37935276900
Order: 4
Author Affiliations:
-
Iso Trace Laboratory, University of Toronto, Toronto, ONT,
Canada
-
Author Name: Paul J. Thomas
Affiliation: Topaz Technology, Inc., Toronto, ONT,
Canada
Author URL:
https://ieeexplore.ieee.org/author/37274648500
ID: 37274648500
Order: 5
Author Affiliations:
- Topaz Technology, Inc., Toronto, ONT, Canada
-
Author Name: Richard I. Hornsey
Affiliation: School of Engineering, York
University, Toronto, ONT, Canada
Author URL:
https://ieeexplore.ieee.org/author/37273160700
ID: 37273160700
Order: 6
Author Affiliations:
-
School of Engineering, York University, Toronto, ONT, Canada
Image Sensor
- sensor_type: CMOS
- resolution: not specified
- dynamic_range: not specified
- pixel_size: not specified
-
dark_current: increased by an order of magnitude after
irradiation, specific value not provided
Optical Data
- focal_length: not specified
- aperture: not specified
- field_of_view: not specified
- distortion: not specified
Performance Metrics
-
noise: increased due to leakage current in photodiodes
and MOS transistors, specific value not provided
Applications & Benefits
-
cell_imaging: CMOS image sensors are attractive for
space applications due to their low-power features, on-chip integration
of analog and digital components, and lower cost.
-
benefits: Effective for a variety of applications
including smartphones, medical devices, and automotive systems.
Supporting Organizations
-
supported_by: Topaz Technology Inc., Center for
Research in Earth and Space Technology
Manuscript Details
- publication_date: Aug. 2007
Relevancy Score
- score: 10
-
missing_fields:
- resolution
- dynamic_range
- pixel_size
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
Processed JSON Filename
request_798b4b83-7095-4d9b-bc6b-48445d901851-spice_models_of_fluorineionirradiated_cmos_devices.json