Spectroscopic Imaging Of Xrays A New Look
- doi: 10.1109/NSSMIC.2003.1352036
-
title: Spectroscopic imaging of x-rays : a new look
- publisher: IEEE
- isbn: 0-7803-8257-9
- issn: 1082-3654
- partnum: 03CH37515
- rank: 3620
- access_type: LOCKED
- content_type: Conferences
-
abstract: In recent hybrid imaging devices a segmented
(50-100/spl mu/m) semiconductor sensor matrix is matched to a separate
readout chip made in some standard silicon CMOS technology. The large
number of contacts are made by high-density bump bonding interconnect
technology. Extended functionality with hundreds of transistors in each
electronics cell can serve a variety of purposes. Fluctuations in the
response of the sensor matrix ran be compensated in real-time. A single
photon processing circuit in each pixel can achieve spectroscopic
imaging by energy measurement even at high rates. However, it is
necessary to take into account the distribution of the signals over
adjacent pixels. Another possibility is the discrimination by energy of
photon conversions in stacked layers with increasing absorption.
- article_number: 1352036
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1352036
-
html_url:
https://ieeexplore.ieee.org/document/1352036/
-
abstract_url:
https://ieeexplore.ieee.org/document/1352036/
-
publication_title: 2003 IEEE Nuclear Science Symposium.
Conference Record (IEEE Cat. No.03CH37515)
- conference_location: Portland, OR, USA
- conference_dates: 19-25 Oct. 2003
- publication_number: 9356
- is_number: 29714
- publication_year: 2003
- publication_date: 19-25 Oct. 2003
- start_page: 228
- end_page: 231 Vol.1
- citing_paper_count: 2
- citing_patent_count: 0
- download_count: 31
- insert_date: 20041122
-
index_terms:
-
ieee_terms:
- Spectroscopy
- Optical imaging
- X-rays
- CMOS technology
- CMOS image sensors
- Optoelectronic and photonic sensors
- Image segmentation
- Silicon
- Bonding
- Integrated circuit interconnections
-
dynamic_index_terms:
- Silicon
- Imaging Device
- CMOS Technology
- Fluctuations In Response
- Large Number Of Contacts
- Semiconductor Sensors
- Sensor Matrix
- Sensor Matrices
- Medical Applications
- Photon Counting
- Single Pixel
- Double Hit
-
isbn_formats:
-
format: Print ISBN,
value: 0-7803-8257-9,
isbnType: Historical
-
authors:
Image Sensor
- sensor_type: CMOS
- resolution: 256x256 pixels
- dynamic_range: Not explicitly stated
- pixel_size: 55µm x 55µm
-
dark_current: Not specified in detail, but high
currents up to 100µA/cm² mentioned as manageable without contributing
noise in counting imagers.
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
- frame_rate: MHz speed (exact fps not specified)
-
signal_to_noise_ratio: Not explicitly stated,
comparator precision mentioned with r.m.s. values from <100 electrons to
2500 electrons
-
power_consumption: Low power for pulse processing
electronics is emphasized, but specific values not provided.
-
noise: Equivalent noise charge (ENC) for a pixel can be
of the order of 100 electrons r.m.s. or less.
Applications & Benefits
-
cell_imaging: Applicable for medical imaging and
industrial applications, particularly in the X-ray photon window.
-
benefits: High rate capability, real-time fluctuations
compensation, single photon processing, and ability for energy
discrimination.
Supporting Organizations
- supported_by: CERN, EP-Division
Manuscript Details
- publication_date: 19-25 Oct. 2003
Relevancy Score
- score: 10
-
missing_fields:
- dynamic_range
- focal_length
- aperture
- field_of_view
- distortion
- sensitivity
- shutter_speed
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