Soi Wafer Selection For Ccdsoicmos Technology

• doi: 10.1109/SOI.2000.892807
• title: SOI wafer selection for CCD/SOI-CMOS technology
• publisher: IEEE
• isbn: 0-7803-6389-2
• issn: 1078-621X
• partnum: 00CH37125
• rank: 3488
• access_type: LOCKED
• content_type: Conferences
• abstract: We have developed a process that monolithically integrates fully depleted SOI CMOS (FDSOI) with high-performance CCD image sensors (Suntharalingam et al, 2000). This integrated technology enables charge-coupled devices (CCDs) to be in close proximity to, yet isolated from, FDSOI circuits. This approach exploits both the advantages of FDSOI (fast, low-power CMOS with potentially enhanced radiation performance) and those of CCDs (high quantum efficiency, low noise, and architectural flexibility). This 3.3 V, 0.3 /spl mu/m CCD/FDSOI-CMOS technology thus enables fabrication of low-power, compact imaging systems. Material requirements for CCD imagers are perhaps the most stringent of any device and require special attention to the quality of the bulk or handle wafer (Gregory et al, 1996). We report here characterization of various SOI handle wafers for use in fabrication of bulk imaging devices.
• article_number: 892807
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=892807
• html_url: https://ieeexplore.ieee.org/document/892807/
• abstract_url: https://ieeexplore.ieee.org/document/892807/
• publication_title: 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125)
• conference_location: Wakefield, MA, USA
• conference_dates: 2-5 Oct. 2000
• publication_number: 7145
• is_number: 19242
• publication_year: 2000
• publication_date: 2-5 Oct. 2000
• start_page: 136
• end_page: 137
• citing_paper_count: 1
• citing_patent_count: 1
• download_count: 215
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Charge coupled devices
    • CMOS technology
    • Surface morphology
    • Wafer bonding
    • Rough surfaces
    • Surface roughness
    • Surface resistance
    • Silicon
    • Surface contamination
    • Isolation technology
  • dynamic_index_terms:
    • CCD Camera
    • Charge-coupled Device
    • Standard Process
    • Silicon Wafer
    • Dark Current
    • Deep State
    • Bulk States
    • Dislocation Slip
    • Optical Inspection
• isbn_formats:
  • format: Print ISBN, value: 0-7803-6389-2, isbnType: Historical
• authors:
  • Author Name: V. Suntharalingam
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37348650100
    ID: 37348650100
    Order: 1
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: B.E. Burke
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37268760700
    ID: 37268760700
    Order: 2
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: C.K. Chen
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37367497900
    ID: 37367497900
    Order: 3
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: M.J. Cooper
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37089125667
    ID: 37089125667
    Order: 4
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: C.L. Keast
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37266797000
    ID: 37266797000
    Order: 5
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA

Image Sensor

• sensor_type: CCD/SOI-CMOS
• resolution: 640x480 and 512x1024
• dynamic_range: Not specified
• pixel_size: 24μm and 15μm
• dark_current: 0.5 nA/cm² (average), with bright defects showing higher currents (tail extending to >5 times the mean)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Bulk imaging devices fabrication for applications including charge-coupled devices (CCDs) used in various imaging systems
• benefits: Low-power compact imaging systems with enhanced radiation performance and potential for high quantum efficiency.

Supporting Organizations

• supported_by: U.S. Government under contract F19628-95-C-0002

Manuscript Details

• publication_date: 2-5 Oct. 2000

Relevancy Score

• score: 10

Processed JSON Filename

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