Smart Cmos Image Sensor Arrays

• doi: 10.1109/16.628825
• title: Smart CMOS image sensor arrays
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 3591
• access_type: LOCKED
• content_type: Journals
• abstract: In this paper, we present several smart image sensor arrays intended for various applications. We discuss the realization of image sensors in CMOS technology and show some examples of one-dimensional (1-D) and two-dimensional (2-D) smart image arrays.
• article_number: 628825
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=628825
• html_url: https://ieeexplore.ieee.org/document/628825/
• abstract_url: https://ieeexplore.ieee.org/document/628825/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 13675
• publication_year: 1997
• publication_date: Oct. 1997
• start_page: 1699
• end_page: 1705
• citing_paper_count: 32
• citing_patent_count: 6
• download_count: 443
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Sensor arrays
    • CMOS image sensors
    • CMOS technology
    • Image sensors
    • CMOS process
    • Array signal processing
    • Smart pixels
    • Intelligent sensors
    • Geometry
    • Silicon
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Sensor Array
    • Image Sensor Array
    • One-dimensional Array
    • Photodiode
    • Photocurrent
    • Random Access
    • Light Sensitivity
    • Photophobic
    • Dark Current
    • Drain Current
    • CMOS Process
    • Illumination Levels
    • Chip Area
    • Weak Inverse
    • Pixel Pitch
    • Binary Signal
    • Edge Extraction
    • Output Line
    • Strong Inversion
• authors:
  • Author Name: M. Schanz
    Affiliation: Department of Electrical Engineering, The Chair of Microelectronic Systems, Gerhard Mercator University of Duisburg, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37374411100
    ID: 37374411100
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, The Chair of Microelectronic Systems, Gerhard Mercator University of Duisburg, Duisburg, Germany
  • Author Name: W. Brockherde
    Affiliation: Fraunhofer Institute of Microelectronic Circuits and System, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37275079200
    ID: 37275079200
    Order: 2
    Author Affiliations:
    • Fraunhofer Institute of Microelectronic Circuits and System, Duisburg, Germany
  • Author Name: R. Hauschild
    Affiliation: Fraunhofer Institute of Microelectronic Circuits and System, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37347011400
    ID: 37347011400
    Order: 3
    Author Affiliations:
    • Fraunhofer Institute of Microelectronic Circuits and System, Duisburg, Germany
  • Author Name: B.J. Hosticka
    Affiliation: Fraunhofer Institute of Microelectronic Circuits and System, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37275079700
    ID: 37275079700
    Order: 4
    Author Affiliations:
    • Fraunhofer Institute of Microelectronic Circuits and System, Duisburg, Germany
  • Author Name: M. Schwarz
    Affiliation: Fraunhofer Institute of Microelectronic Circuits and System, Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37357836300
    ID: 37357836300
    Order: 5
    Author Affiliations:
    • Fraunhofer Institute of Microelectronic Circuits and System, Duisburg, Germany

Image Sensor

• sensor_type: CMOS
• resolution: 128x1 for 1-D arrays, 32x16 for hexagonal 2-D arrays
• dynamic_range: 140 dB
• pixel_size: 16 µm (1-D array), 60 µm (2-D array)
• dark_current: up to 1 nA for photodiodes

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 200 kHz for serial readout
• sensitivity: 10 A/W in weak inversion for phototransistor, 0.3 A/W for photodiode
• power_consumption: 5 mW at 5 V power supply for 2-D sensor; 80 mW at 10 V for 1-D edge extraction
• noise: 0.6% FPN at monitoring array

Applications & Benefits

• cell_imaging: Used for various applications, including edge detection and image acquisition in real-time.
• benefits: High light sensitivity, low blooming effect, reduced noise, complex signal processing capabilities, random access to pixels

Supporting Organizations

• supported_by: Fraunhofer Institute of Microelectronic Circuits and Systems, Gerhard Mercartor University of Duisburg

Manuscript Details

• publication_date: Oct. 1997

Relevancy Score

• score: 10

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