Similarities Between Proton And Neutron Induced Dark Current Distribution In Cmos Image Sensors

• doi: 10.1109/TNS.2012.2203317
• title: Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 3551
• access_type: LOCKED
• content_type: Journals
• abstract: Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared. It appears that for a given displacement damage dose, the hot pixel tail distributions are very similar, if normalized properly. This behavior is observed on all the tested CIS designs (4 designs, 2 technologies) and all the tested particles (protons from 50 MeV to 500 MeV and neutrons from 14 MeV to 22 MeV). Thanks to this result, all the dark current distribution presented in this paper can be fitted by a simple model with a unique set of two factors (not varying from one experimental condition to another). The proposed normalization method of the dark current histogram can be used to compare any dark current distribution to the distributions observed in this work. This paper suggests that this model could be applied to other devices and/or irradiation conditions.
• article_number: 6243250
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6243250
• html_url: https://ieeexplore.ieee.org/document/6243250/
• abstract_url: https://ieeexplore.ieee.org/document/6243250/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 6268392
• publication_year: 2012
• publication_date: Aug. 2012
• start_page: 927
• end_page: 936
• citing_paper_count: 54
• citing_patent_count: 0
• download_count: 933
• insert_date: 20120718
• index_terms:
  • ieee_terms:
    • Dark current
    • Protons
    • Radiation effects
    • Neutrons
    • Photodiodes
    • CMOS image sensors
    • Silicon
  • author_terms:
    • Active pixel sensor (APS)
    • CMOS image sensor (CIS)
    • dark current distribution model
    • displacement damage dose (DDD)
    • monolithic active pixel sensor (MAPS)
  • dynamic_index_terms:
    • Current Distribution
    • Dark Current
    • Proton Beam
    • Test Particle
    • Activation Energy
    • Radiation Dose
    • Irradiation Dose
    • Probability Density Function
    • Gamma Distribution
    • Energy Distribution
    • Exponential Distribution
    • Effect Of Ions
    • Technology Model
    • Engineering Model
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Particle Energy
    • Account In Model
    • Pixel Array
    • Electric Field Enhancement
    • Inelastic Collisions
    • Inelastic Interactions
    • Neutron Irradiation
    • Neutron Radiation
    • PIN Photodiode
    • Interaction Cross Section
    • Bulk Defects
    • Exponential Tail
    • Current Source
    • Current Regulations
    • Average Number Of Interactions
    • Conversion Factor
    • Energy Deposition
    • CCD Camera
    • Charge-coupled Device
    • Background Radiation
    • Ambient Radiation
    • Radiation Environment
• authors:
  • Author Name: Cedric Virmontois
    Affiliation: ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38327725000
    ID: 38327725000
    Order: 1
    Author Affiliations:
    • ISAE, Université de Toulouse, Toulouse, France
  • Author Name: Vincent Goiffon
    Affiliation: ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 2
    Author Affiliations:
    • ISAE, Université de Toulouse, Toulouse, France
  • Author Name: Pierre Magnan
    Affiliation: ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 3
    Author Affiliations:
    • ISAE, Université de Toulouse, Toulouse, France
  • Author Name: Sylvain Girard
    Affiliation: DIF, CEA, DAM, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37272737300
    ID: 37272737300
    Order: 4
    Author Affiliations:
    • DIF, CEA, DAM, Arpajon, France
  • Author Name: Olivier Saint-Pe
    Affiliation: EADS Astrium, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38274783700
    ID: 38274783700
    Order: 5
    Author Affiliations:
    • EADS Astrium, Toulouse, France
  • Author Name: Sophie Petit
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37587030900
    ID: 37587030900
    Order: 6
    Author Affiliations:
    • CNES, Toulouse, France
  • Author Name: Guy Rolland
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37424863500
    ID: 37424863500
    Order: 7
    Author Affiliations:
    • CNES, Toulouse, France
  • Author Name: Alain Bardoux
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38332888100
    ID: 38332888100
    Order: 8
    Author Affiliations:
    • CNES, Toulouse, France

Image Sensor

• sensor_type: CMOS Image Sensor
• resolution: 128x128 pixels (3T-pixels), 256x256 pixels (4T-pixels)
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified in detail, observed values in context of dark current increase distributions after radiation exposure

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: Quantified as dark current increase in electrons (e-) after radiation exposure, precise values not detailed

Applications & Benefits

• cell_imaging: Used in scientific and industrial applications, especially where radiation exposure is a concern in space instruments and scientific imaging
• benefits: Designed to operate in intense radiation environments, providing improved performance and reliability for high radiation applications

Supporting Organizations

• supported_by: EADS Astrium, CNES, and Université de Toulouse

Manuscript Details

• publication_date: Aug. 2012

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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