Silicon Constituent In Modern Digital Fotoapparatus

• doi: 10.1109/SIBEDM.2005.195565
• title: Silicon constituent in modern digital fotoapparatus
• publisher: IEEE
• isbn: 5-7782-0491-4
• issn: 1815-3712
• partnum: 05EX1056
• rank: 3546
• access_type: LOCKED
• content_type: Conferences
• abstract: Usual circuit of forming the image of object is based on transformation of radiation with various intensity into the electrical signal with the aid of matrix photodetector devices (MPD) which can be formed on the devices with charge connection (DCC) or devices with charge injection (DCI). However, since 90th years of last century an energical attempt to use the structures built with the aid of CMOS technology have been made for creation the matrix image sensors. During last some years of recent century these quickly developing photo sensitive structures was named in the scientific literature as CMOS sensors. CMOS technology consists in forming the n-channel and p-channel transistors in the single substrate. Forming the n-channel transistor in the n-substrate is earring out in acceptor-doped field of the surface. The features of this technology allow increasing the density of elements on the crystal and to decrease the space of non-transparent metal interconnects. All these features allow forming more pixels on the unit of surface in comparison with DCC technology but allow saving the parameters of DCC sensors. It should be added that the CMOS technology allows forming the invertors and memory cell and, hence, forms the basis for computers. An important application of CMOS matrixes is fotoapparats and television. It's obviously that the CMOS matrixes are applied for computers, video-, photo- and television cameras, mobile phones, games and security systems.
• article_number: 1523170
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1523170
• html_url: https://ieeexplore.ieee.org/document/1523170/
• abstract_url: https://ieeexplore.ieee.org/document/1523170/
• publication_title: Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005.
• conference_location: Erlagol, Russia
• conference_dates: 1-5 July 2005
• publication_number: 10213
• is_number: 32576
• publication_year: 2005
• publication_date: 1-5 July 2005
• start_page: 3
• end_page: 7
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 35
• insert_date: 20051031
• index_terms:
  • ieee_terms:
    • Silicon
    • CMOS technology
    • Space technology
    • CMOS image sensors
    • TV
    • Photodetectors
    • Image sensors
    • Integrated circuit interconnections
    • Sensor phenomena and characterization
    • Inverters
  • dynamic_index_terms:
    • Mobile Phone
    • Video Camera
    • Cybersecurity
    • Security System
    • Memory Cells
    • Electrical Signals
    • Photodetector
    • Technological Features
    • Technological Characteristics
    • Single Substrate
    • Charge Injection
    • CMOS Technology
    • Sensor Parameters
    • Aid Of Technology
    • Photo Camera
    • Photographic Camera
    • Charged Device
    • Electrode
    • Photodiode
    • Polarizability
    • Color Images
    • External Electric Field
    • Non-volatile Memory
    • Green Filter
    • Red Filter
    • Blue Pixels
    • Nematic
    • Nematic Phase
    • Epitaxial Layer
    • Epilayer
• isbn_formats:
  • format: Print ISBN, value: 5-7782-0491-4, isbnType: Historical
• authors:
  • Author Name: I.G. Neizvestny
    Affiliation: Academician of Russian Academy of Sciences, SB RAS, Novosibirsk, Russia
    Author URL: https://ieeexplore.ieee.org/author/37282288600
    ID: 37282288600
    Order: 1
    Author Affiliations:
    • Academician of Russian Academy of Sciences, SB RAS, Novosibirsk, Russia

Image Sensor

• sensor_type: CMOS
• resolution: High (not specified)
• dynamic_range: Not specified
• pixel_size: Small (not specified)
• dark_current: Low (not specified)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: CMOS image sensors can be used in various imaging applications.
• benefits: Key advantages of CMOS sensors include lower power consumption and the ability to integrate additional functions onto the same chip.

Supporting Organizations

• supported_by: Institute of Semiconductor Physics SB RAS, Russian Academy of Sciences

Manuscript Details

• publication_date: 1-5 July 2005

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_90790f14-431c-4da0-a8b3-6db92a180f56-silicon_constituent_in_modern_digital_fotoapparatus.json