Session 5 Overview Image Sensors Immd Subcommittee

• doi: 10.1109/ISSCC.2018.8310192
• title: Session 5 overview: Image sensors: IMMD subcommittee
• publisher: IEEE
• isbn: 978-1-5386-2227-8
• issn: 2376-8606
• rank: 3527
• access_type: EPHEMERA
• content_type: Conferences
• abstract: The session presents advances in image sensors covering BSI, global shuttering, organic photoconductive film, pixel scaling, dynamic vision, high frame rate imaging, 3D time-of-flight, and SPADs. The first paper, by Sony, presents a BSI global shutter with in-pixel ADC. Then, Panasonic presents a global shutter using organic film with in-pixel noise cancellation. Samsung presents a 0.9μm pixel with complete deep-trench isolation. Sony presents a low-power event-driven imager with motion detection. TSMC presents a 13.5Mpixel BSI image sensor with a readout subsampling architecture that allows 514fps at 720p. NHK presents a high-speed image sensor achieving 8K video up to 480fps. Toshiba presents a LiDAR SoC enabling range measurements up to 200m. Microsoft presents a BSI time-of-flight image sensor with 3.5μm global-shutter pixels with modulation frequencies up to 320MHz. Delft University presents a direct time-of-flight image sensor with modular SPAD-based pixel arrays fabricated in 3D-stacked 45/65nm CMOS. Finally, FBK presents a SPAD array coupled with TDCs to measure spatial correlations of entangled photons at a rate of 800kHz.
• article_number: 8310192
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8310192
• html_url: https://ieeexplore.ieee.org/document/8310192/
• abstract_url: https://ieeexplore.ieee.org/document/8310192/
• publication_title: 2018 IEEE International Solid-State Circuits Conference - (ISSCC)
• conference_location: San Francisco, CA, USA
• conference_dates: 11-15 Feb. 2018
• publication_number: 8304413
• is_number: 8310156
• publication_year: 2018
• publication_date: 11-15 Feb. 2018
• start_page: 78
• end_page: 79
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 1330
• insert_date: 20180312
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5386-2227-8, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5090-4940-0, isbnType: New-2005
• authors:
  • Author Name: Hayato Wakabayashi
    Affiliation: Sony Electronics, San Jose, CA
    Author URL: https://ieeexplore.ieee.org/author/37830445700
    ID: 37830445700
    Order: 1
    Author Affiliations:
    • Sony Electronics, San Jose, CA
  • Author Name: Makoto Ikeda
    Affiliation: University of Tokyo, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089111023
    ID: 37089111023
    Order: 2
    Author Affiliations:
    • University of Tokyo, Tokyo, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 1.46MP, 8K4K, 24MP, 13.5MP, 33MP, 3.9MP
• dynamic_range: 10dB (compared to silicon sensor)
• pixel_size: 0.9μm, 1.1μm, 2.1μm, 3.5μm, 44.64μm
• dark_current: 7.74nA (Sony), unspecified for others

Optical Data

• focal_length: unspecified
• aperture: unspecified
• field_of_view: unspecified
• distortion: unspecified

Performance Metrics

• frame_rate: 60fps, 514fps, 480fps, 10fps
• signal_to_noise_ratio: unspecified
• sensitivity: unspecified
• shutter_speed: unspecified
• power_consumption: 1.1mW (Sony specific for 10fps)
• noise: 3.2e- (random noise for NHK)

Applications & Benefits

• cell_imaging: not specified
• benefits: High resolution, low-power consumption, global shutter capability.

Supporting Organizations

• supported_by: Sony Semiconductor Solutions, Panasonic, Samsung Electronics, TSMC, NHK, Toshiba, Microsoft, Delft University of Technology, FBK

Manuscript Details

• publication_date: 11-15 Feb. 2018

Relevancy Score

• score: 10

Processed JSON Filename

request_d9d8f8d0-d627-4359-aee9-04855217aa58-session_5_overview_image_sensors_immd_subcommittee.json