Sensitivity Of Soi Lateral Diodes For Bolometric Sensing
- doi: 10.1109/IRMMW-THz.2018.8510188
-
title: Sensitivity of SOI Lateral Diodes for Bolometric
Sensing
- publisher: IEEE
- isbn: 978-1-5386-3810-1
- issn: 2162-2027
- rank: 3520
- access_type: LOCKED
- content_type: Conferences
-
abstract: In this study we characterize the thermal
sensitivity of lateral diodes fabricated in a commercial 180 nm SOl-CMOS
process. The current responsivity to temperature and the low-frequency
noise were measured and correlated to the device dimensions. We also
report on a FPA microbolometer sensor for THz imaging (0.6-1.2 THz)
implemented with lateral diode detectors coupled to on-chip antennas.
- article_number: 8510188
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8510188
-
html_url:
https://ieeexplore.ieee.org/document/8510188/
-
abstract_url:
https://ieeexplore.ieee.org/document/8510188/
-
publication_title: 2018 43rd International Conference
on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
- conference_location: Nagoya, Japan
- conference_dates: 9-14 Sept. 2018
- publication_number: 8491395
- is_number: 8509838
- publication_year: 2018
- publication_date: 9-14 Sept. 2018
- start_page: 1
- end_page: 2
- citing_paper_count: 5
- citing_patent_count: 0
- download_count: 147
- insert_date: 20181028
-
index_terms:
-
ieee_terms:
- Temperature sensors
- Antennas
- Sensitivity
- Temperature measurement
- P-i-n diodes
-
dynamic_index_terms:
- Bolometer
- Low-frequency Noise
- Diode Detector
- Scanning Electron Microscopy
- Perimeter
- Power Spectral Density
- Spectral Function
- Thermal Insulation
- Heat Insulation
- Thermal Barrier
- Temperature Sensitivity
- Reactive Ion Etching
- Reactive-ion Etching
- Noise Power Spectral Density
-
isbn_formats:
-
format: Print on Demand(PoD) ISBN,
value: 978-1-5386-3810-1,
isbnType: New-2005
-
format: USB ISBN,
value: 978-1-5386-3808-8,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-5386-3809-5,
isbnType: New-2005
-
authors:
-
Author Name: Dan Corcos
Affiliation: ON Semiconductor, Haifa, Israel
Author URL:
https://ieeexplore.ieee.org/author/37698136300
ID: 37698136300
Order: 1
Author Affiliations:
- ON Semiconductor, Haifa, Israel
-
Author Name: Danny Elad
Affiliation: ON Semiconductor, Haifa, Israel
Author URL:
https://ieeexplore.ieee.org/author/37300719600
ID: 37300719600
Order: 2
Author Affiliations:
- ON Semiconductor, Haifa, Israel
-
Author Name: Thomas Morf
Affiliation: IBM Research, Zurich, Rüschlikon,
Switzerland
Author URL:
https://ieeexplore.ieee.org/author/37266745500
ID: 37266745500
Order: 3
Author Affiliations:
- IBM Research, Zurich, Rüschlikon, Switzerland
-
Author Name: Ute Drechsler
Affiliation: IBM Research, Zurich, Rüschlikon,
Switzerland
Author URL:
https://ieeexplore.ieee.org/author/37267355100
ID: 37267355100
Order: 4
Author Affiliations:
- IBM Research, Zurich, Rüschlikon, Switzerland
Image Sensor
- sensor_type: CMOS
- resolution: N/A
- dynamic_range: N/A
- pixel_size: N/A
- dark_current: N/A
Optical Data
- focal_length: N/A
- aperture: N/A
- field_of_view: N/A
- distortion: N/A
Performance Metrics
- frame_rate: N/A
- signal_to_noise_ratio: N/A
- sensitivity: N/A
- shutter_speed: N/A
- power_consumption: N/A
- noise: N/A
Applications & Benefits
- cell_imaging: N/A
- benefits: N/A
Supporting Organizations
-
supported_by: ON Semiconductor, IBM Research – Zurich
Manuscript Details
- publication_date: 9-14 Sept. 2018
Relevancy Score
- score: 5
-
missing_fields:
- resolution
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
- cell_imaging
- benefits
Processed JSON Filename
request_e774ff64-cc24-42cd-9058-34bfc8897d9b-sensitivity_of_soi_lateral_diodes_for_bolometric_sensing.json