Scaleable Singlephoton Avalanche Diode Structures In Nanometer Cmos Technology

• doi: 10.1109/TED.2011.2141138
• title: Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 3500
• access_type: LOCKED
• content_type: Journals
• abstract: Single-photon avalanche photodiodes (SPADs) operating in Geiger mode offer exceptional time resolution and optical sensitivity. Implementation in modern nanometer-scale complementary metal-oxide-semiconductor (CMOS) technologies to create dense high-resolution arrays requires a device structure that is scaleable down to a few micrometers. A family of three SPAD structures with sub-100-Hz mean dark count rate (DCR) is proposed in 130-nm CMOS image sensor technology. Based on a novel retrograde buried n-well guard ring, these detectors are shown to readily scale from 32 to 2 μm with improving DCR, jitter, and yield. One of these detectors is compatible with standard triple-well digital CMOS, and the others bring the first low-DCR realizations at the 130-nm node of shallow-trench-isolation-bounded and enhancement SPADs.
• article_number: 5770197
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5770197
• html_url: https://ieeexplore.ieee.org/document/5770197/
• abstract_url: https://ieeexplore.ieee.org/document/5770197/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 5896011
• publication_year: 2011
• publication_date: July 2011
• start_page: 2028
• end_page: 2035
• citing_paper_count: 133
• citing_patent_count: 0
• download_count: 3549
• insert_date: 20110519
• index_terms:
  • ieee_terms:
    • CMOS integrated circuits
    • Electric breakdown
    • Implants
    • Junctions
    • Pixel
    • Doping
    • Tunneling
  • author_terms:
    • Biomedical imaging
    • complementary metal–oxide–semiconductor (CMOS) integrated circuits
    • image sensors
    • photodetectors
    • photodiodes
    • p-n junctions
  • dynamic_index_terms:
    • Complementary Metal Oxide Semiconductor Technology
    • Single-photon Avalanche Diode
    • Dark Count
    • Dark Count Rate
    • Active Area
    • Field Strength
    • Field Intensity
    • High Field
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Fill Factor
    • Detectable Size
    • Modernization Process
    • Fluorescence Lifetime Imaging Microscopy
    • FLIM
    • Fluorescence Lifetime Imaging
    • Processing Nodes
    • Planar Regions
    • Microlenses
    • Micro Lens
    • Pixel Pitch
    • Interface Trap
• authors:
  • Author Name: Justin A. Richardson
    Affiliation: Dialog Semiconductor (U.K.) Limited, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37576718300
    ID: 37576718300
    Order: 1
    Author Affiliations:
    • Dialog Semiconductor (U.K.) Limited, Edinburgh, UK
  • Author Name: Eric A. G. Webster
    Affiliation: Institute for Integrated Micro and Nano Systems, School of Electrical and Electronic Engineering, University of Edinburgh, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37599902600
    ID: 37599902600
    Order: 2
    Author Affiliations:
    • Institute for Integrated Micro and Nano Systems, School of Electrical and Electronic Engineering, University of Edinburgh, Edinburgh, UK
  • Author Name: Lindsay A. Grant
    Affiliation: ST Microelectronics Imaging Division, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37268638300
    ID: 37268638300
    Order: 3
    Author Affiliations:
    • ST Microelectronics Imaging Division, Edinburgh, UK
  • Author Name: Robert K. Henderson
    Affiliation: Institute for Integrated Micro and Nano Systems, School of Electrical and Electronic Engineering, University of Edinburgh, Edinburgh, UK
    Author URL: https://ieeexplore.ieee.org/author/37294086900
    ID: 37294086900
    Order: 4
    Author Affiliations:
    • Institute for Integrated Micro and Nano Systems, School of Electrical and Electronic Engineering, University of Edinburgh, Edinburgh, UK

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: sub-100 µm
• dark_current: sub-100 Hz DCR for typical 8-µm devices (achieved 9 Hz in smaller configurations)

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: <100 Hz DCR with certain configurations, behavior of devices improves with scaling down

Applications & Benefits

• cell_imaging: used in medical imaging such as fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy.
• benefits: low noise, potential for dense integration in high-resolution imaging applications.

Supporting Organizations

• supported_by: STMicroelectronics, Institute for Integrated Micro and Nano Systems, The University of Edinburgh.

Manuscript Details

• publication_date: July 2011

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • pixel_size
  • readout_speed
  • noise_sources

Processed JSON Filename

request_67968300-a73c-4d19-80c2-d03d537f6244-scaleable_singlephoton_avalanche_diode_structures_in_nanometer_cmos_technology.json