Randomly Accessible Active Pixel Sensor With Logarithmicexponential
Response Enabling Low Dose And Wide Dynamic Range Indirectconversion Xray
Imaging
- doi: 10.1109/JSEN.2024.3496761
-
title: Randomly Accessible Active Pixel Sensor With
Logarithmic-Exponential Response Enabling Low Dose and Wide Dynamic
Range Indirect-Conversion X-Ray Imaging
- publisher: IEEE
- isbn:
- issn: 2379-9153
- rank: 3380
- access_type: LOCKED
- content_type: Journals
-
abstract: Active pixel sensor (APS) outperforms passive
pixel sensor (PPS) in sensitivity and frame rate, and although dominates
in CMOS technology, has not yet been adopted in thin-film transistor
(TFT)-based flat-panel X-ray detectors (FPDs) for medical imaging due to
low fill factor, leading to reduced sensitivity. In this work, a novel
APS with a logarithmic-exponential response based on two dual-gate TFTs
is proposed and intended for high-performance large-area
indirect-conversion X-ray imaging. Leveraging the in-pixel TFT
amplifier, the pixelated sensor demonstrates a low off current of $\sim
10^{-{12}}$ A, a high gain of over 4% $\times 10^{{5}}$ %, a high
responsivity of $10^{{5}}$ A/W, and a wide dynamic range (DR) of over
120 dB at 550 nm with a detection limit of 200 pW/cm2. Such an
architecture leads to a randomly accessible 75- $\mu $ m $256\times 256$
APS array with integrating a high-resolution medical-grade gadolinium
oxysulfide (GOS) scintillator for low-dose indirect-conversion X-ray
imaging, requiring high resolution, wide DR, and high frame rate for
low-dose mammographic imaging.
- article_number: 10756559
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10756559
-
html_url:
https://ieeexplore.ieee.org/document/10756559/
-
abstract_url:
https://ieeexplore.ieee.org/document/10756559/
- publication_title: IEEE Sensors Journal
- conference_location:
- conference_dates:
- publication_number: 7361
- is_number: 10823640
- publication_year: 2025
- publication_date: 1 Jan.1, 2025
- start_page: 426
- end_page: 433
- citing_paper_count: 0
- citing_patent_count: 0
- download_count: 211
- insert_date: 20241118
-
index_terms:
-
ieee_terms:
- Thin film transistors
- Sensors
- Logic gates
- Noise
- Transistors
- Sensitivity
- X-ray imaging
- Photonics
- Electrodes
- Threshold voltage
-
author_terms:
- Active pixel sensor (APS)
- logarithmic-exponential response
- low dose X-ray imaging
- randomly accessible
- thin-film transistor
- wide dynamic range
-
dynamic_index_terms:
- Active Sensors
- Low-dose Images
- Sensor Pixel
- Dynamic X-ray
- Active Pixel Sensor
- Dynamic X-ray Imaging
- High-resolution
- Frame Rate
- High Gain
- X-ray Detector
- High Frame Rate
- Electrode
- Light Intensity
- Analog-to-digital Converter
- Analog-to-digital
- Digital-to-analog Converter
- Output Current
- Dielectric Layer
- Insulation Layer
- Passivation Layer
- Surface Passivation
- Random Access
- Plasma-enhanced Chemical Vapor Deposition
- PECVD
- PIN Photodiode
- Top Gate
- Pixel Array
- Bottom Gate
- Pixel Pitch
- Least Significant Bit
- Low Bit
- Amorphous Silicon
- Silicon Thin Film
- Readout System
-
authors:
-
Author Name: Xianming Li
Affiliation: Guangdong Province Key Laboratory of
Display Material and Technology and the State Key Laboratory of
Optoelectronic Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
Author URL:
https://ieeexplore.ieee.org/author/37088717483
ID: 37088717483
Order: 1
Author Affiliations:
-
Guangdong Province Key Laboratory of Display Material and
Technology and the State Key Laboratory of Optoelectronic
Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
-
Author Name: Weisheng Wu
Affiliation: Guangdong Province Key Laboratory of
Display Material and Technology and the State Key Laboratory of
Optoelectronic Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
Author URL:
https://ieeexplore.ieee.org/author/37089951720
ID: 37089951720
Order: 2
Author Affiliations:
-
Guangdong Province Key Laboratory of Display Material and
Technology and the State Key Laboratory of Optoelectronic
Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
-
Author Name: Weikang Yan
Affiliation: Guangdong Province Key Laboratory of
Display Material and Technology and the State Key Laboratory of
Optoelectronic Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
Author URL:
https://ieeexplore.ieee.org/author/374467479456923
ID: 374467479456923
Order: 3
Author Affiliations:
-
Guangdong Province Key Laboratory of Display Material and
Technology and the State Key Laboratory of Optoelectronic
Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
-
Author Name: Haorong Xie
Affiliation: Guangdong Province Key Laboratory of
Display Material and Technology and the State Key Laboratory of
Optoelectronic Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
Author URL:
https://ieeexplore.ieee.org/author/236543830750446
ID: 236543830750446
Order: 4
Author Affiliations:
-
Guangdong Province Key Laboratory of Display Material and
Technology and the State Key Laboratory of Optoelectronic
Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
-
Author Name: Xinghui Liu
Affiliation: Guangdong Province Key Laboratory of
Display Material and Technology and the State Key Laboratory of
Optoelectronic Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
Author URL:
https://ieeexplore.ieee.org/author/37085797471
ID: 37085797471
Order: 5
Author Affiliations:
-
Guangdong Province Key Laboratory of Display Material and
Technology and the State Key Laboratory of Optoelectronic
Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
-
Author Name: Kai Wang
Affiliation: Guangdong Province Key Laboratory of
Display Material and Technology and the State Key Laboratory of
Optoelectronic Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
Author URL:
https://ieeexplore.ieee.org/author/37085375952
ID: 37085375952
Order: 6
Author Affiliations:
-
Guangdong Province Key Laboratory of Display Material and
Technology and the State Key Laboratory of Optoelectronic
Materials and Technologies, School of Electronics and
Information Technology, Sun Yat-sen University, Guangzhou, China
Image Sensor
-
sensor_type: Active Pixel Sensor (APS) based on
dual-gate TFTs
- resolution: 256 x 256 pixels
- dynamic_range: over 120 dB
- pixel_size: 75 µm
-
dark_current: approximately 10^-12 A (estimate based on
typical noise performance of the technology used)
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
-
frame_rate: High frame rate compatible with medical
imaging
- sensitivity: over 10^5 A/W
- noise: Low OFF current of approximately 10^-12 A
Applications & Benefits
-
cell_imaging: Designed for low-dose indirect-conversion
X-ray imaging in medical applications such as mammography.
-
benefits: High performance in low light conditions,
enhanced image quality, random access, and high dynamic range.
Supporting Organizations
-
supported_by: National Key Research and Development
Program of China, National Natural Science Foundation of China, Toray
Industries Inc.
Manuscript Details
- publication_date: 1 Jan.1, 2025
Relevancy Score
- score: 9
-
missing_fields:
- focal_length
- aperture
- field_of_view
- distortion
- signal_to_noise_ratio
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