Random Telegraph Noises In Cmos Image Sensors Caused By Variable Gateinduced Sense Node Leakage Due To Xray Irradiation

• doi: 10.1109/JEDS.2019.2893299
• title: Random Telegraph Noises in CMOS Image Sensors Caused by Variable Gate-Induced Sense Node Leakage Due to X-Ray Irradiation
• publisher: IEEE
• isbn:
• issn: 2168-6734
• rank: 3377
• access_type: OPEN_ACCESS
• content_type: Journals
• abstract: The effects of X-ray irradiation on the random noises, especially the random telegraph noises (RTN), of a 45-nm on 65-nm stacked CMOS image sensor with 8.3M 1.1 μm pixels are investigated. It is found that before X-ray irradiation the dominant type of RTN among the noisiest pixels is the source follower (SF) MOSFET channel RTN. In contrast, after X-ray irradiation up to a total ionizing dose of 1 Mrad(SiO2), the RTN becomes dominated by the variable transfer-gate-induced sense node (SN) leakage. These two different types of RTN can be distinguished by their dependence on the transfer gate (TG) OFF voltage and the time between the correlated double sampling (CDS). The magnitude of the RTN from the variable SN leakage is proportional to the CDS time and can be suppressed effectively by increasing the TG OFF voltage, whereas the SF RTN is independent of the CDS time or the TG OFF voltage.
• article_number: 8612927
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8612927
• html_url: https://ieeexplore.ieee.org/document/8612927/
• abstract_url: https://ieeexplore.ieee.org/document/8612927/
• publication_title: IEEE Journal of the Electron Devices Society
• conference_location:
• conference_dates:
• publication_number: 6245494
• is_number: 8656606
• publication_year: 2019
• publication_date: 2019
• start_page: 227
• end_page: 238
• citing_paper_count: 11
• citing_patent_count: 0
• download_count: 2207
• insert_date: 20190115
• index_terms:
  • ieee_terms:
    • Logic gates
    • Radiation effects
    • Dark current
    • Voltage control
    • Charge transfer
    • X-ray imaging
    • CMOS image sensors
  • author_terms:
    • Random noise (RN)
    • random telegraph noise (RTN)
    • random telegraph signal (RTS)
    • CMOS image sensor (CIS)
    • pinned photodiode (PPD)
    • active pixel sensor (APS)
    • correlated double sampling (CDS)
    • gate induced drain leakage (GIDL)
    • variable junction leakage (VJL)
    • variable retention time (VRT)
    • radiation damage
    • X-ray
    • total ionizing dose (TID)
  • dynamic_index_terms:
    • Random Noise
    • Channel Noise
    • X-ray Irradiation
    • X-ray Radiation
    • Sensing Nodes
    • Sensor-nodes
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Histogram
    • Waveform
    • Scatter Plot
    • Time Constant
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Long Tail
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Tail Of Distribution
    • Voltage Signal
    • Contact Region
    • Discrete Levels
    • Dark Current
    • Quantile Function
    • Inverse Cumulative Distribution Function
    • Inverse Distribution Function
    • Time-domain Waveform
    • Time Domain Waveform
    • Dark Signal
    • Log-linear Relationship
    • PIN Photodiode
    • Random Switching
• authors:
  • Author Name: Calvin Yi-Ping Chao
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37085699985
    ID: 37085699985
    Order: 1
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Thomas M.-H. Wu
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37086202276
    ID: 37086202276
    Order: 2
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Shang-Fu Yeh
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37708389500
    ID: 37708389500
    Order: 3
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Kuo-Yu Chou
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/38248164500
    ID: 38248164500
    Order: 4
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Honyih Tu
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37849197500
    ID: 37849197500
    Order: 5
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Chih-Lin Lee
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37086696807
    ID: 37086696807
    Order: 6
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Chin Yin
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/38247208400
    ID: 38247208400
    Order: 7
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Philippe Paillet
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37283486900
    ID: 37283486900
    Order: 8
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: Vincent Goiffon
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 9
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France

Image Sensor

• sensor_type: CMOS
• resolution: 8.3 Mpixel (3,296 x 2,512)
• dynamic_range: not specified
• pixel_size: 1.1 µm
• dark_current: <0.1 e/s (before X-ray irradiation), increased to 256.5 e/s after 1 Mrad(SiO2) TID

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: up to 10 MHz data rate for ADC
• signal_to_noise_ratio: increased from 1.29 e-rms (before irradiation) to 4.19 e-rms (after X-ray irradiation)
• sensitivity: investigated through leakage currents and random telegraph noise (RTN)
• noise: RMS of 100 frames pixel by pixel indicating random noise (RN) measured

Applications & Benefits

• cell_imaging: used in high-end smartphone cameras
• benefits: high resolution, low RN, small footprint

Supporting Organizations

• supported_by: Taiwan Semiconductor Manufacturing Company, CEA, DAM, ISAE-SUPAERO

Manuscript Details

• publication_date: 2019

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • temporal noise
  • fixed-pattern noise
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

request_2f68f0c5-aeb6-451a-a716-cfdeb60757fa-random_telegraph_noises_in_cmos_image_sensors_caused_by_variable_gateinduced_sense_node_leakage_due_to_xray_irradiation.json