Random Addressable 2048Spl Times2048 Active Pixel Image Sensor

• doi: 10.1109/16.628827
• title: Random addressable 2048/spl times/2048 active pixel image sensor
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 3378
• access_type: LOCKED
• content_type: Journals
• abstract: In this paper, we discuss the design, design issues, fabrication, and performance of a 2048/spl times/2048 active pixel image sensor in a 0.5-/spl mu/m standard CMOS process. Each pixel, 7.5/spl times/7.5 /spl mu/m/sup 2/, consists of three transistors and a photo diode, resulting in a 12-million transistor chip with a die size of 16.3/spl times/16.5 mm. The pixel has a nonintegrating direct readout architecture, with a logarithmic light-to-voltage conversion. This allows the array to be fully random accessible, both in space and time. The sensor has eight analog outputs, each with a pixel rate of 4.5 MHz, which implies a maximum frame rate of eight full frames per second. Sub-sampling or windowing makes higher frame rates possible. The yield of the sensor is high if one accepts a small number of bad pixels.
• article_number: 628827
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=628827
• html_url: https://ieeexplore.ieee.org/document/628827/
• abstract_url: https://ieeexplore.ieee.org/document/628827/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 13675
• publication_year: 1997
• publication_date: Oct. 1997
• start_page: 1716
• end_page: 1720
• citing_paper_count: 75
• citing_patent_count: 11
• download_count: 644
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Pixel
    • Image sensors
    • CMOS image sensors
    • Image resolution
    • Optical feedback
    • Thickness measurement
    • Space technology
    • Sensor systems
    • Optical amplifiers
    • Voltage
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Photodiode
    • Frame Rate
    • Analog Output
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Light Intensity
    • Field Experiments
    • Image Resolution
    • Image Size
    • Quantum Efficiency
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Photocurrent
    • Electrical Engineering
    • Electric Motor
    • Random Access
    • Pixel Array
    • Silicide
    • Readout Noise
    • Parallel Output
• authors:
  • Author Name: D. Scheffer
    Affiliation: IMEC, Leuven, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37442311300
    ID: 37442311300
    Order: 1
    Author Affiliations:
    • IMEC, Leuven, Belgium
  • Author Name: B. Dierickx
    Affiliation: IMEC, Leuven, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37331682800
    ID: 37331682800
    Order: 2
    Author Affiliations:
    • IMEC, Leuven, Belgium
  • Author Name: G. Meynants
    Affiliation: IMEC, Leuven, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37427148600
    ID: 37427148600
    Order: 3
    Author Affiliations:
    • IMEC, Leuven, Belgium

Image Sensor

• sensor_type: CMOS
• resolution: 2048x2048
• dynamic_range: not specified
• pixel_size: 7.5 µm
• dark_current: high (exact value not provided)

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 4.5 fps (9 full images per second achievable with sub-sampling)
• signal_to_noise_ratio: constant across dynamic range
• sensitivity: equivalent to 60 mV per decade of light
• power_consumption: less than 100 mW
• noise: 0.25 mV RMS

Applications & Benefits

• cell_imaging: used in industrial applications like optical inspection and robotics
• benefits: random access allows for faster examination of image regions than real-time

Supporting Organizations

• supported_by: Flemish Institute for the Promotion of Scientific Technological Research in Industry (IWT)

Manuscript Details

• publication_date: Oct. 1997

Relevancy Score

• score: 10

Processed JSON Filename

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