Radiation Hardness Study On A Fully Depleted Pinned Photodiode Cmos Image Sensor

• doi: 10.1109/NSS/MIC42101.2019.9060009
• title: Radiation Hardness Study on a Fully Depleted Pinned Photodiode CMOS Image Sensor
• publisher: IEEE
• isbn: 978-1-7281-4165-7
• issn: 1082-3654
• rank: 3366
• access_type: LOCKED
• content_type: Conferences
• abstract: The radiation hardness of a fully depleted Pinned Photodiode (PPD) CMOS image sensor (CIS) has been evaluated with gamma and proton irradiations. The sensors employ an additional n-type implant in pixel which allows full depletion to be achieved by reversing biasing the substrate, and have been irradiated alongside reference devices in which the implant has been omitted. Event analysis under X-ray illumination has been used to study the charge collection and charge diffusion in the sensors. The results show no obvious charge collection degradation at 10 MeV equivalent proton fluence of up to 1011 p/cm2. Moreover, it has been shown that charge diffusion is largely suppressed in the fully depleted sensors. After exposure to a total dose of 100 krad(Si), both the fully depleted and the reference sensors show high sense node leakage current. This is believed to be due to an exposed edge of the shallow trench insulation (STI) oxide near the sense node. Dark signal distribution shows that hot pixels are dominant for both sensors after proton irradiation. An activation energy of ~0.62 eV derived from the temperature-dependent dark current result suggests that irradiation induced bulk defects is the main dark current source.
• article_number: 9060009
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9060009
• html_url: https://ieeexplore.ieee.org/document/9060009/
• abstract_url: https://ieeexplore.ieee.org/document/9060009/
• publication_title: 2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
• conference_location: Manchester, UK
• conference_dates: 26 Oct.-2 Nov. 2019
• publication_number: 9039702
• is_number: 9059608
• publication_year: 2019
• publication_date: 26 Oct.-2 Nov. 2019
• start_page: 1
• end_page: 2
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 222
• insert_date: 20200409
• index_terms:
  • ieee_terms:
    • Protons
    • Radiation effects
    • Dark current
    • Sensor phenomena and characterization
    • CMOS image sensors
    • Photodiodes
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Radiation Tolerance
    • Radiation-tolerant
    • Radiation Hardness
    • PIN Photodiode
    • Activation Energy
    • Gamma Irradiation
    • Gamma Radiation
    • Dark Current
    • High Leakage
    • Charge Collection
    • Charge Diffusion
    • Dark Signal
    • Bulk Defects
    • Reference Sample
    • Cluster Size
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-7281-4165-7, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-7281-4164-0, isbnType: New-2005
• authors:
  • Author Name: Xiao Meng
    Affiliation: Centre for Electronic Imaging, The Open University, Milton Keynes, U.K
    Author URL: https://ieeexplore.ieee.org/author/37088366250
    ID: 37088366250
    Order: 1
    Author Affiliations:
    • Centre for Electronic Imaging, The Open University, Milton Keynes, U.K
  • Author Name: Konstantin D. Stefanov
    Affiliation: Centre for Electronic Imaging, The Open University, Milton Keynes, U.K
    Author URL: https://ieeexplore.ieee.org/author/37296468900
    ID: 37296468900
    Order: 2
    Author Affiliations:
    • Centre for Electronic Imaging, The Open University, Milton Keynes, U.K
  • Author Name: Michael A. Holland
    Affiliation: Centre for Electronic Imaging, The Open University, Milton Keynes, U.K
    Author URL: https://ieeexplore.ieee.org/author/37088362478
    ID: 37088362478
    Order: 3
    Author Affiliations:
    • Centre for Electronic Imaging, The Open University, Milton Keynes, U.K
  • Author Name: Andrew D. Holland
    Affiliation: Centre for Electronic Imaging, The Open University, Milton Keynes, U.K
    Author URL: https://ieeexplore.ieee.org/author/38181840900
    ID: 38181840900
    Order: 4
    Author Affiliations:
    • Centre for Electronic Imaging, The Open University, Milton Keynes, U.K

Image Sensor

• sensor_type: CMOS Image Sensor
• resolution: Not explicitly stated
• dynamic_range: Not explicitly stated
• pixel_size: Not explicitly stated
• dark_current: High sense node leakage current observed after irradiation, specific value not given.

Optical Data

• focal_length: Not applicable
• aperture: Not applicable
• field_of_view: Not applicable
• distortion: Not applicable

Performance Metrics

• frame_rate: Not explicitly stated
• signal_to_noise_ratio: Not explicitly stated
• sensitivity: Not explicitly stated
• shutter_speed: Not explicitly stated
• power_consumption: Not explicitly stated
• noise: High leakage current noted.

Applications & Benefits

• cell_imaging: Used in various imaging applications including Time-of-Flight (ToF) ranging, space remote sensing, and particle detection.
• benefits: Low noise and low dark current, high quantum efficiency at NIR and soft X-ray wavelengths.

Supporting Organizations

• supported_by: The Open University, U.K. Space Agency.

Manuscript Details

• publication_date: 26 Oct.-2 Nov. 2019

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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