Radiation Effects On A Radiationtolerant Cmos Active Pixel Sensor
- doi: 10.1109/TNS.2004.835108
-
title: Radiation effects on a radiation-tolerant CMOS
active pixel sensor
- publisher: IEEE
- isbn:
- issn: 1558-1578
- rank: 3371
- access_type: LOCKED
- content_type: Journals
-
abstract: A comprehensive cobalt60, proton, and heavy
ion evaluation of the Fillfactory STAR-250 CMOS active pixel sensor has
been performed for space applications up to 100 krd(Si). It was possible
to eliminate image lag by adjustment of the bias voltage and this
allowed a reduction in proton-induced dark signal. Both cobalt60 and
proton irradiation produced a decrease in responsivity, which is thought
to be due to total dose effects. There was also an increase in
photoresponse nonuniformity (PRNU). No major single event effects
(latch-up or functional interrupt) where seen at the maximum linear
energy transfer (LET) of 68MeV/(mg/cm/sup 2/).
- article_number: 1344413
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1344413
-
html_url:
https://ieeexplore.ieee.org/document/1344413/
-
abstract_url:
https://ieeexplore.ieee.org/document/1344413/
-
publication_title: IEEE Transactions on Nuclear Science
- conference_location:
- conference_dates:
- publication_number: 23
- is_number: 29605
- publication_year: 2004
- publication_date: Oct. 2004
- start_page: 2753
- end_page: 2762
- citing_paper_count: 37
- citing_patent_count: 0
- download_count: 681
- insert_date: 20041018
-
index_terms:
-
ieee_terms:
- Radiation effects
- Protons
- CMOS technology
- CMOS image sensors
- Testing
- Voltage
- Energy exchange
- Pixel
- Charge coupled devices
- Clocks
-
dynamic_index_terms:
- Heavy Ions
- Heavy-ion Collisions
- Linear Energy Transfer
- Dark Signal
- Factor 2
- Changes In Response
- CCD Camera
- Charge-coupled Device
- Integration Time
- Analog-to-digital Converter
- Analog-to-digital
- Digital-to-analog Converter
- Reduction In Response
- Threshold Voltage
- Saturation Effect
- Dark Current
- Reduction In Gain
- Increase In Noise
- Readout Noise
-
authors:
-
Author Name: G.R. Hopkinson
Affiliation: Sira Limited, Kent, UK
Author URL:
https://ieeexplore.ieee.org/author/37267628600
ID: 37267628600
Order: 1
Author Affiliations:
-
Author Name: A. Mohammadzadeh
Affiliation: European Space Agency, ESTEC,
Noordwijk, Netherlands
Author URL:
https://ieeexplore.ieee.org/author/37267625800
ID: 37267625800
Order: 2
Author Affiliations:
- European Space Agency, ESTEC, Noordwijk, Netherlands
-
Author Name: R. Harboe-Sorensen
Affiliation: European Space Agency, ESTEC,
Noordwijk, Netherlands
Author URL:
https://ieeexplore.ieee.org/author/38274180100
ID: 38274180100
Order: 3
Author Affiliations:
- European Space Agency, ESTEC, Noordwijk, Netherlands
Image Sensor
- sensor_type: CMOS Active Pixel Sensor (APS)
- resolution: 512 x 512
- dynamic_range: Not specified
- pixel_size: 25 um
-
dark_current: 5 electrons/pixel/s (maximum after
radiation)
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
- frame_rate: 5 MHz
- signal_to_noise_ratio: 60-70 electrons rms
-
power_consumption: Approx. 29 mA during irradiation
Applications & Benefits
-
cell_imaging: CMOS image sensors applied in space
applications and potentially in smartphones and medical devices.
-
benefits: Lower power consumption, reduced complexity
by integrating additional functionality on-chip, improved radiation
tolerance over CCDs.
Supporting Organizations
- supported_by: European Space Agency
Manuscript Details
- publication_date: Oct. 2004
Relevancy Score
- score: 9
-
missing_fields:
- dynamic_range
- focal_length
- aperture
- field_of_view
- distortion
- sensitivity
- shutter_speed
- noise
Processed JSON Filename
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