Radiation Effects In Ccd On Cmos Devices First Analysis Of Tid And Ddd Effects

• doi: 10.1109/TNS.2015.2497405
• title: Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 3357
• access_type: LOCKED
• content_type: Journals
• abstract: As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations.
• article_number: 7348799
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7348799
• html_url: https://ieeexplore.ieee.org/document/7348799/
• abstract_url: https://ieeexplore.ieee.org/document/7348799/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 7348735
• publication_year: 2015
• publication_date: Dec. 2015
• start_page: 2965
• end_page: 2970
• citing_paper_count: 6
• citing_patent_count: 0
• download_count: 702
• insert_date: 20151217
• index_terms:
  • ieee_terms:
    • CMOS image sensors
    • Radiation effects
    • Charge transfer
    • Charge coupled devices
  • author_terms:
    • Charge
    • charge coupled devices
    • charge transfer
    • CMOS image sensors (CIS)
    • deep submicrometer process
    • radiation effects
    • transfer inefficiency
    • trapped charge
  • dynamic_index_terms:
    • CCD Camera
    • Charge-coupled Device
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Total Ionizing Dose Effect
    • Irradiation
    • Image Sensor
    • Camera Sensor
    • Dark Current
    • Radiation Tolerance
    • Radiation Hardness
    • Test Chip
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Background Radiation
    • Ambient Radiation
    • Radiation Environment
    • Channel Surface
    • CMOS Technology
    • Gate Oxide
    • Gate Structure
    • Bulk Defects
    • PIN Photodiode
• authors:
  • Author Name: O. Marcelot
    Affiliation: Image Sensor Research Team, ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37643741500
    ID: 37643741500
    Order: 1
    Author Affiliations:
    • Image Sensor Research Team, ISAE, Université de Toulouse, Toulouse, France
  • Author Name: V. Goiffon
    Affiliation: Image Sensor Research Team, ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 2
    Author Affiliations:
    • Image Sensor Research Team, ISAE, Université de Toulouse, Toulouse, France
  • Author Name: M. Raine
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37540551800
    ID: 37540551800
    Order: 3
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: O. Duhamel
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/38341897200
    ID: 38341897200
    Order: 4
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: M. Gaillardin
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37428401600
    ID: 37428401600
    Order: 5
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: R. Molina
    Affiliation: Image Sensor Research Team, ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38285932500
    ID: 38285932500
    Order: 6
    Author Affiliations:
    • Image Sensor Research Team, ISAE, Université de Toulouse, Toulouse, France
  • Author Name: P. Magnan
    Affiliation: Image Sensor Research Team, ISAE, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 7
    Author Affiliations:
    • Image Sensor Research Team, ISAE, Université de Toulouse, Toulouse, France

Image Sensor

• sensor_type: CCD on CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Varies by design, around 140 pA for 'Ref' and 'Poly shift' designs, 210 pA for 'Pwell shift' before irradiation; increased significantly after TID irradiation (factor of about 5-10) and under DDD conditions (by factors of 10 at high DDD) according to design specifics.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Used in space imaging applications and potentially in nuclear physics experiments.
• benefits: Combines advantages of CMOS integration and charge transfer for imaging applications.

Supporting Organizations

• supported_by: ISAE, CEA, DAM, DIF, Université de Toulouse, leading Asian company in CMOS imaging technology.

Manuscript Details

• publication_date: Dec. 2015

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_434558f0-c3bd-4524-9675-70412b1ca5e3-radiation_effects_in_ccd_on_cmos_devices_first_analysis_of_tid_and_ddd_effects.json