Quantified Temperature Effect In A Cmos Image Sensor

• doi: 10.1109/TED.2009.2037389
• title: Quantified Temperature Effect in a CMOS Image Sensor
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 3343
• access_type: LOCKED
• content_type: Journals
• abstract: In recent years, CMOS image sensors (CISs) have increasingly become major players in the solid-state imaging market, a market in which charge-coupled device image sensors were once the dominant product. Exceptional circuit integration capability makes CMOS imagers suitable for implementation in a single-chip imaging system while inducing the temperature variation of an image sensor. In this paper, global and local high-leakage nonuniformities induced by on-chip temperature variations were controlled by both a Peltier junction device and on-chip resistors. Two test chips were fabricated using TSMC 0.13-¿m CIS processes and TSMC 1-poly 6-metal 0.18-¿m process technology, respectively. As expected, fixed-pattern noise increased with temperature. To quantify the influence of temperature, the maximum depth of an affected region was defined as DAR. The experimental results revealed that the DAR index increased with either an increase in power consumption or a space reduction between the resistor and the pixel array. The DAR index not only characterized affected regions in the experiment but also provided a valuable reference regarding temperature protection for future imager designs.
• article_number: 5373944
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5373944
• html_url: https://ieeexplore.ieee.org/document/5373944/
• abstract_url: https://ieeexplore.ieee.org/document/5373944/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 5393266
• publication_year: 2010
• publication_date: Feb. 2010
• start_page: 422
• end_page: 428
• citing_paper_count: 16
• citing_patent_count: 1
• download_count: 1088
• insert_date: 20100108
• index_terms:
  • ieee_terms:
    • Noise
    • Pixel
    • Temperature sensors
    • Heating
    • Arrays
    • System-on-a-chip
    • Resistors
  • author_terms:
    • CMOS image sensor (CIS)
    • depth of the affected region (DAR)
    • resistive heater
    • temperature variation
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Imaging System
    • Temporal Variation
    • Power Consumption
    • Pixel Array
    • Increased Power Consumption
    • Peltier Effect
    • Peltier Plate
    • Peltier Coefficient
    • Test Chip
    • High Temperature
    • Local Variations
    • Random Noise
    • Channel Noise
    • Heat Source
    • Heat Resistance
    • Joule Heating
    • Ohmic Heating
    • Noise Sources
    • Global Temperature
    • Local Temperature
    • Binary Image
    • Thermal Noise
    • Current Noise
    • Circuit Design
    • Influence Of Sources
    • Dark Current
    • Sensor Array
    • Shot Noise
    • Poisson Noise
    • Security Cameras
    • High Power Consumption
    • Reset Voltage
    • Entire Chip
    • Peripheral Circuits
    • Image Quality
    • Temperature Distribution
• authors:
  • Author Name: Dong-Long Lin
    Affiliation: Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37531499400
    ID: 37531499400
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
  • Author Name: Ching-Chun Wang
    Affiliation: R&D Department, Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37440784200
    ID: 37440784200
    Order: 2
    Author Affiliations:
    • R&D Department, Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, Taiwan
  • Author Name: Chia-Ling Wei
    Affiliation: Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37419349600
    ID: 37419349600
    Order: 3
    Author Affiliations:
    • Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan

Image Sensor

• sensor_type: CMOS
• resolution: 640x480, 100x50
• dynamic_range: Not specified
• pixel_size: 3.3x3.3 μm, 3.8x3.9 μm
• dark_current: Varies with temperature, specifically quantified as q/kBT, doubling every 10°C increase in temperature.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• power_consumption: Varies (up to 180 mW for local variation experiments)
• noise: Includes shot noise and reset noise, but specific values not extracted.

Applications & Benefits

• cell_imaging: The study involved evaluating temperature effects on CMOS image sensor performance and noise.
• benefits: Lower power consumption and smaller dimensions compared to CCD image sensors.

Supporting Organizations

• supported_by: National Science Council, Taiwan, TSMC.

Manuscript Details

• publication_date: Feb. 2010

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed

Processed JSON Filename

request_7857b131-de26-47da-bedf-0a54c714d3a6-quantified_temperature_effect_in_a_cmos_image_sensor.json