Pulsed Timeofflight 3Dcmos Imaging Using Photogatebased Active Pixel Sensors

• doi: 10.1109/ESSCIRC.2009.5325991
• title: Pulsed time-of-flight 3D-CMOS imaging using photogate-based active pixel sensors
• publisher: IEEE
• isbn: 978-1-4244-4354-3
• issn: 1930-8833
• partnum: 09EX2870
• rank: 3339
• access_type: LOCKED
• content_type: Conferences
• abstract: A novel time-of-flight (ToF) 3D-image sensor based on photogate (PG) active pixel structures fabricated in a standard 0.35 mum CMOS process is presented. Distance measurements are performed using a pulsed near-infrared (lambda = 905 nm) laser with pulse widths of 30 ns to 60 ns for distance measurements up to 9 m. The developed ToF pixel consists of a photogate (APG = 30 x 30 mum2) and four floating diffusion (FD) readout nodes, which enable the detection of reflected laser pulse delay and efficient ambient light suppression. Our fabricated sensor contains 4 x 16 pixels and exhibits a dynamic range of 56 dB and a noise equivalent power of 4.46 W/m2 using a single laser pulse.
• article_number: 5325991
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5325991
• html_url: https://ieeexplore.ieee.org/document/5325991/
• abstract_url: https://ieeexplore.ieee.org/document/5325991/
• publication_title: 2009 Proceedings of ESSCIRC
• conference_location: Athens, Greece
• conference_dates: 14-18 Sept. 2009
• publication_number: 5307451
• is_number: 5325915
• publication_year: 2009
• publication_date: 14-18 Sept. 2009
• start_page: 200
• end_page: 203
• citing_paper_count: 7
• citing_patent_count: 1
• download_count: 835
• insert_date: 20091110
• index_terms:
  • ieee_terms:
    • Pixel
    • Image sensors
    • Optical pulses
    • Distance measurement
    • Pulse measurements
    • Space vector pulse width modulation
    • Laser noise
    • CMOS process
    • Performance evaluation
    • Delay
  • dynamic_index_terms:
    • Sensor Pixel
    • Active Pixel Sensor
    • Distancing Measures
    • Laser Pulse
    • Pulse Width
    • Pulsewidth Modulation
    • Standard Process
    • Ambient Light
    • Near-infrared Laser
    • Single Laser Pulse
    • Single-pulse Laser
    • Standard CMOS
    • Noise Equivalent Power
    • Time Delay
    • Electrostatic Potential
    • Electric Potential
    • Sensory Systems
    • Charge Carriers
    • Photodetector
    • Near-infrared
    • Image Sensor
    • Camera Sensor
    • Transfer Time
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Charge Collection
    • Laser Pulse Width
    • End Of Pulse
    • Photogenerated Charge Carriers
    • Readout Circuit
    • Photo-generated Charge
    • Amount Of Charge
    • Charge Quantity
• isbn_formats:
  • format: Print ISBN, value: 978-1-4244-4354-3, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-4355-0, isbnType: New-2005
• authors:
  • Author Name: Andreas Spickermann
    Affiliation: Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37891140500
    ID: 37891140500
    Order: 1
    Author Affiliations:
    • Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
  • Author Name: Daniel Durini
    Affiliation: Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37564987800
    ID: 37564987800
    Order: 2
    Author Affiliations:
    • Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
  • Author Name: Stefan Brocker
    Affiliation: Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37671236700
    ID: 37671236700
    Order: 3
    Author Affiliations:
    • Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
  • Author Name: Werner Brockherde
    Affiliation: Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37275079200
    ID: 37275079200
    Order: 4
    Author Affiliations:
    • Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
  • Author Name: Bedrich J. Hosticka
    Affiliation: Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37275079700
    ID: 37275079700
    Order: 5
    Author Affiliations:
    • Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
  • Author Name: Anton Grabmaier
    Affiliation: Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany
    Author URL: https://ieeexplore.ieee.org/author/37588742500
    ID: 37588742500
    Order: 6
    Author Affiliations:
    • Fraunhofer Institute for Microelectronic Circuits and Systems (IMS), Duisburg, Germany

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: 56dB
• pixel_size: 30x30 µm²
• dark_current: Not specified in detail

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• power_consumption: 3.3V
• noise: 4.46W/m²

Applications & Benefits

• cell_imaging: Not specified
• benefits: Improved response velocity, optimized ambient light suppression, low noise performance.

Supporting Organizations

• supported_by: German Federal Ministry for Education and Research (BMBF)

Manuscript Details

• publication_date: 14-18 Sept. 2009

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • cell_imaging
  • benefits

Processed JSON Filename

request_23c876b5-2a49-4d46-ab51-b16cb650ab0b-pulsed_timeofflight_3dcmos_imaging_using_photogatebased_active_pixel_sensors.json