Proximity Gettering Design Of Silicon Wafers Using Hydrocarbon Molecular Ion Implantation Technique For Advanced Cmos Image Sensors

• doi: 10.1109/IIT.2018.8807961
• title: Proximity Gettering Design of Silicon Wafers Using Hydrocarbon Molecular Ion Implantation Technique for Advanced CMOS Image Sensors
• publisher: IEEE
• isbn: 978-1-5386-6830-6
• issn:
• rank: 3331
• access_type: LOCKED
• content_type: Conferences
• abstract: The metallic impurity gettering capability of hydrocarbon molecular ion-implanted silicon wafers was demonstrated by using a complementary metal-oxide-semiconductor (CMOS) image sensor that provides floating diffusion amplifier voltage (Vdark) output signals under dark conditions. It was found that the Vdark output signals of hydrocarbon molecular ion implanted p/p- and p/p+ silicon wafers did not increase after intentional contamination with Fe, Cu, Ni and Co metallic impurities. This indicates that the hydrocarbon molecular ion implanted silicon wafers were able to getter metallic impurities in the projection range of hydrocarbon molecular ion implantation during CMOS device fabrication. It was also found that the hydrocarbon-molecular-ion-implanted silicon wafers had improved electrical device performance factors, such as pn-junction leakage current, in actual device process lines. This gettering technique has no dependence on the silicon wafer substrates such as whether it is composed of bulk por p+ boron doped silicon crystals. We believe that the hydrocarbon-molecular-ion-implanted silicon wafers will be advantages for advanced CMOS image sensor fabrication.
• article_number: 8807961
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8807961
• html_url: https://ieeexplore.ieee.org/document/8807961/
• abstract_url: https://ieeexplore.ieee.org/document/8807961/
• publication_title: 2018 22nd International Conference on Ion Implantation Technology (IIT)
• conference_location: Würzburg, Germany
• conference_dates: 16-21 Sept. 2018
• publication_number: 8794648
• is_number: 8807892
• publication_year: 2018
• publication_date: 16-21 Sept. 2018
• start_page: 275
• end_page: 286
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 226
• insert_date: 20190822
• index_terms:
  • ieee_terms:
    • Impurities
    • CMOS image sensors
    • Silicon
    • Fabrication
    • Hydrocarbons
    • Ion implantation
    • Gettering
  • author_terms:
    • CMOS image sensor
    • molecular ion implantation
    • proximity gettering technique
    • floating diffusion amplifier
    • dark current
    • metallic impurity contamination
  • dynamic_index_terms:
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Molecular Ion
    • Silicon Wafer
    • Image Sensor
    • Camera Sensor
    • Ion Implantation Technique
    • Output Signal
    • Dark Conditions
    • Advanced Imaging
    • Device Fabrication
    • Chemical Doping
    • Doped Silicon
    • P-doping
    • Electrical Performance
    • Electrical Devices
    • Advanced Sensors
    • Silicon Crystal
    • Single-crystal Silicon
    • Single Crystal Silicon
    • Advanced Fabrication
    • Dark Signal
    • Output Voltage Signal
    • Heat Treatment
    • Heat-treated
    • Fabrication Process
    • Complex Carbon
    • Bulk Silicon
    • Device Fabrication Process
    • Device Manufacturing Process
    • Deeper Level
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Atom Probe Tomography
    • Metal Contamination
    • Range Of Ions
    • Stopping And Range Of Ions In Matter
    • Silicon Wafer Surface
    • Epitaxial Growth
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5386-6830-6, isbnType: New-2005
  • format: DVD ISBN, value: 978-1-5386-6827-6, isbnType: New-2005
  • format: Print ISBN, value: 978-1-5386-6828-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5386-6829-0, isbnType: New-2005
• authors:
  • Author Name: Kazunari Kurita
    Affiliation: SUMCO CORPORATION, Imari, Saga, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086170826
    ID: 37086170826
    Order: 1
    Author Affiliations:
    • SUMCO CORPORATION, Imari, Saga, Japan
  • Author Name: Takeshi Kadono
    Affiliation: SUMCO CORPORATION, Imari, Saga, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086167473
    ID: 37086167473
    Order: 2
    Author Affiliations:
    • SUMCO CORPORATION, Imari, Saga, Japan
  • Author Name: Satoshi Shigematsu
    Affiliation: SUMCO CORPORATION, Imari, Saga, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086418438
    ID: 37086418438
    Order: 3
    Author Affiliations:
    • SUMCO CORPORATION, Imari, Saga, Japan
  • Author Name: Ryo Hirose
    Affiliation: SUMCO CORPORATION, Imari, Saga, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086167354
    ID: 37086167354
    Order: 4
    Author Affiliations:
    • SUMCO CORPORATION, Imari, Saga, Japan
  • Author Name: Ryosuke Okuyama
    Affiliation: SUMCO CORPORATION, Imari, Saga, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086166253
    ID: 37086166253
    Order: 5
    Author Affiliations:
    • SUMCO CORPORATION, Imari, Saga, Japan
  • Author Name: Ayumi Onaka-Masada
    Affiliation: SUMCO CORPORATION, Imari, Saga, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086417427
    ID: 37086417427
    Order: 6
    Author Affiliations:
    • SUMCO CORPORATION, Imari, Saga, Japan
  • Author Name: Hidehiko Okuda
    Affiliation: SUMCO CORPORATION, Imari, Saga, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086171122
    ID: 37086171122
    Order: 7
    Author Affiliations:
    • SUMCO CORPORATION, Imari, Saga, Japan
  • Author Name: Yoshihiro Koga
    Affiliation: SUMCO CORPORATION, Imari, Saga, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086167475
    ID: 37086167475
    Order: 8
    Author Affiliations:
    • SUMCO CORPORATION, Imari, Saga, Japan
  • Author Name: Jea-Gun Park
    Affiliation: Hanyang University, Seoul, Korea
    Author URL: https://ieeexplore.ieee.org/author/37311230600
    ID: 37311230600
    Order: 9
    Author Affiliations:
    • Hanyang University, Seoul, Korea

Image Sensor

• sensor_type: CMOS
• resolution: N/A
• dynamic_range: N/A
• pixel_size: N/A
• dark_current: N/A

Optical Data

• focal_length: N/A
• aperture: N/A
• field_of_view: N/A
• distortion: N/A

Performance Metrics

• frame_rate: N/A
• signal_to_noise_ratio: N/A
• sensitivity: N/A
• shutter_speed: N/A
• power_consumption: N/A
• noise: N/A

Applications & Benefits

• cell_imaging: Used in applications such as smartphones, medical devices, and automotive systems.
• benefits: Digital imaging and conversion of light into electrical signals.

Supporting Organizations

• supported_by: SUMCO CORPORATION, Hanyang University

Manuscript Details

• publication_date: 16-21 Sept. 2018

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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