Proton And Gamma Radiation Effects On A Fully Depleted Pinned Photodiode Cmos Image Sensor

• doi: 10.1109/TNS.2020.2990081
• title: Proton and Gamma Radiation Effects on a Fully Depleted Pinned Photodiode CMOS Image Sensor
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 3327
• access_type: LOCKED
• content_type: Journals
• abstract: The radiation hardness of a fully depleted pinned photodiode (PPD) CMOS image sensor (CIS) has been evaluated with gamma and proton irradiations. The sensors employ an additional n-type implant in pixel which allows full depletion to be achieved by reverse biasing the substrate and have been irradiated alongside reference devices in which the implant has been omitted. The results show no visible degradation of the sensor's radiation hardness by the additional implant. The main degraded parameters caused by ionizing radiation, from both gamma and proton irradiation, are the image lag and the surface dark current. High dark current in the sense node (SN) is identified and is found to be caused by the shallow trench isolation (STI) around the SN. The dark current increase after proton irradiation has been shown to be dominated by displacement damage-induced bulk defects and the value is consistent with those from other PPD CISs in the literature. The charge collection efficiency is not significantly affected by the bulk traps even after 10-MeV-equivalent proton fluence of up to 1012 p/cm2. However, the ionizing damage from the highest proton fluence reached causes a considerable drop in the charge-to-voltage conversion factor.
• article_number: 9076701
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9076701
• html_url: https://ieeexplore.ieee.org/document/9076701/
• abstract_url: https://ieeexplore.ieee.org/document/9076701/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 9121776
• publication_year: 2020
• publication_date: June 2020
• start_page: 1107
• end_page: 1113
• citing_paper_count: 6
• citing_patent_count: 0
• download_count: 486
• insert_date: 20200423
• index_terms:
  • ieee_terms:
    • Radiation effects
    • Dark current
    • Protons
    • Sensor phenomena and characterization
    • Implants
    • Current measurement
  • author_terms:
    • CMOS image sensor (CIS)
    • displacement damage dose (DDD)
    • full depletion
    • pinned photodiode (PPD)
    • radiation damage
    • total ionizing dose (TID)
  • dynamic_index_terms:
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
    • Gamma Irradiation
    • Gamma Radiation
    • Effect Of Gamma Irradiation
    • Effect Of Gamma Radiation
    • PIN Photodiode
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Conversion Factor
    • Dark Current
    • Charge Collection
    • Radiation Tolerance
    • Radiation-tolerant
    • Radiation Hardness
    • Charge Collection Efficiency
    • Bulk Defects
    • CCD Camera
    • Charge-coupled Device
    • Charge Coupled Device
    • Activation Energy
    • X-ray Spectroscopy
    • X-ray Spectrometer
    • Integration Time
    • Carrier Mobility
    • Electron Mobility
    • Hole Mobility
    • Peak Amplitude
    • Future Design
    • Quantum Efficiency
    • Saturation Level
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Readout Noise
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Reference Sensor
    • Excessive Signaling
    • Excessive Signalling
    • Surface Current
    • Ocean Currents
• authors:
  • Author Name: Xiao Meng
    Affiliation: Centre for Electronic Imaging, The Open University, Milton Keynes, U.K.
    Author URL: https://ieeexplore.ieee.org/author/37088366250
    ID: 37088366250
    Order: 1
    Author Affiliations:
    • Centre for Electronic Imaging, The Open University, Milton Keynes, U.K.
  • Author Name: Konstantin D. Stefanov
    Affiliation: Centre for Electronic Imaging, The Open University, Milton Keynes, U.K.
    Author URL: https://ieeexplore.ieee.org/author/37296468900
    ID: 37296468900
    Order: 2
    Author Affiliations:
    • Centre for Electronic Imaging, The Open University, Milton Keynes, U.K.
  • Author Name: Andrew D. Holland
    Affiliation: Centre for Electronic Imaging, The Open University, Milton Keynes, U.K.
    Author URL: https://ieeexplore.ieee.org/author/38181840900
    ID: 38181840900
    Order: 3
    Author Affiliations:
    • Centre for Electronic Imaging, The Open University, Milton Keynes, U.K.

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: 1 e-/s below -10°C (nonirradiated) and increased after irradiation mean dark current after different DDD: ~0.0887 e−s−1μm−3·(TeV/g)−1, likely higher after 10^12 p/cm² proton irradiation rate (high dark current in sense node identified)

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: dark current identified as significant source of noise, particularly shot noise of the dark current in irradiated sensors, no major degradation in readout noise after irradiation.

Applications & Benefits

• cell_imaging: PPD CMOS image sensors are used in various imaging applications such as medical devices, time-of-flight ranging, space remote sensing, and consumer imaging.
• benefits: Excellent performance in terms of dark current and noise; potential for high radiation hardness due to reported studies.

Supporting Organizations

• supported_by: The Open University from the Space Strategic Research Area (SRA), U.K. Space Agency under Grant RP10G0348A01.

Manuscript Details

• publication_date: June 2020

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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