Process Integration Considerations For 300 Mm Tsv Manufacturing

• doi: 10.1109/TDMR.2009.2034317
• title: Process Integration Considerations for 300 mm TSV Manufacturing
• publisher: IEEE
• isbn:
• issn: 1558-2574
• rank: 3311
• access_type: LOCKED
• content_type: Journals
• abstract: Through-silicon via (TSV) will transition to high volume production when end-customer value (as exhibited by functionality, performance, form factor, etc.) are delivered at equivalent yield and cost. While this has been successfully achieved for CMOS image sensors (starting with 200 mm), significant work remains to be done in the TSV value chain (design-materials-process-packaging-test) in the communication and memory segments. This paper will address key unit process/process-integration challenges and highlight recent internal/ partner and industry findings in the context of TSV manufacturability at 300 mm.
• article_number: 5286292
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5286292
• html_url: https://ieeexplore.ieee.org/document/5286292/
• abstract_url: https://ieeexplore.ieee.org/document/5286292/
• publication_title: IEEE Transactions on Device and Materials Reliability
• conference_location:
• conference_dates:
• publication_number: 7298
• is_number: 5310814
• publication_year: 2009
• publication_date: Dec. 2009
• start_page: 524
• end_page: 528
• citing_paper_count: 58
• citing_patent_count: 2
• download_count: 1182
• insert_date: 20091013
• index_terms:
  • ieee_terms:
    • Through-silicon vias
    • Manufacturing processes
    • Etching
    • Chemical vapor deposition
    • Silicon
    • Planarization
    • Integrated circuit interconnections
    • Dielectrics
    • Pulp manufacturing
    • Copper
  • author_terms:
    • Chemical vapor deposition (CVD)
    • chemical–mechanical planarization (CMP)
    • electrochemically deposition (ECD)
    • etch
    • etching
    • physical vapor deposition (PVD)
    • through-silicon via (TSV)
  • dynamic_index_terms:
    • Through Silicon Via
    • Form Factor
    • Aspect Ratio
    • Etching
    • Chemical Vapor Deposition
    • Vapor Deposition
    • Chemical Deposition
    • Overburden
    • Process Flow
    • Integration Scheme
    • Integration Strategy
    • Etching Process
    • Scallop
    • Physical Vapor Deposition
    • Etching Step
    • Bosch Process
• authors:
  • Author Name: Sesh Ramaswami
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37987676100
    ID: 37987676100
    Order: 1
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA
  • Author Name: John Dukovic
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37988725600
    ID: 37988725600
    Order: 2
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA
  • Author Name: Brad Eaton
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37298164100
    ID: 37298164100
    Order: 3
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA
  • Author Name: Sharma Pamarthy
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37978016000
    ID: 37978016000
    Order: 4
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA
  • Author Name: Ajay Bhatnagar
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37528504200
    ID: 37528504200
    Order: 5
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA
  • Author Name: Zhitao Cao
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37088683518
    ID: 37088683518
    Order: 6
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA
  • Author Name: Kedar Sapre
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37973018700
    ID: 37973018700
    Order: 7
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA
  • Author Name: Yuchun Wang
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37087446915
    ID: 37087446915
    Order: 8
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA
  • Author Name: Ajay Kumar
    Affiliation: Applied Materials, Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/38066300600
    ID: 38066300600
    Order: 9
    Author Affiliations:
    • Applied Materials, Santa Clara, CA, USA

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: CMOS image sensors are used in applications such as smartphones, medical devices, and automotive systems.
• benefits: Enables digital imaging in various applications.

Supporting Organizations

• supported_by: not specified

Manuscript Details

• publication_date: Dec. 2009

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_6c1505f0-605c-465e-a760-25a3fa93d6c7-process_integration_considerations_for_300_mm_tsv_manufacturing.json