Process Development Of 3D Wlcsp For Ultrathin Cmos Image Sensor

• doi: 10.1109/ICEPT50128.2020.9202985
• title: Process development of 3D WLCSP for ultra-thin CMOS image sensor
• publisher: IEEE
• isbn: 978-1-7281-6827-2
• issn:
• rank: 3312
• access_type: LOCKED
• content_type: Conferences
• abstract: For a long time, CMOS image sensor (CIS) packaging has been developing towards lighter weight, better performance and high-density integration. In order to meet the miniaturization of electronic devices, the packaging size of CMOS image sensor products also needs to be reduced accordingly. Therefore, new processes need to be developed to meet the needs of thinner products packaging. In this paper, a kind of three-dimensional wafer level chip scale package (3D WLCSP) for ultra-thin CMOS image sensor using via-last through silicon via (TSV) and temporary bonding technology is reported. The process flow of the 3D WLCSP using via-last TSV, key processes including wafer-level temporary bonding, wafer backside thinning, stress relief etching, Bosch etching, oxide removing, low temperature plasma-enhanced chemical vapor deposition (PECVD) to deposit isolation layer, seed layer deposition, conformal electroplating and passivation, ball grid array (BGA) formation were developed. Key process parameters of the developed 3D WLCSP was characterized by various failure analysis methods. The main failure modes were pad damage and silica isolation layer crack. After process optimization, high packaging yield was obtained. The result indicates that 3D WLCSP with vertical via-last TSV and temporary bonding can provide a low-cost, reliable solution for the ultra-thin CMOS image sensor packaging.
• article_number: 9202985
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9202985
• html_url: https://ieeexplore.ieee.org/document/9202985/
• abstract_url: https://ieeexplore.ieee.org/document/9202985/
• publication_title: 2020 21st International Conference on Electronic Packaging Technology (ICEPT)
• conference_location: Guangzhou, China
• conference_dates: 12-15 Aug. 2020
• publication_number: 9199379
• is_number: 9201905
• publication_year: 2020
• publication_date: 12-15 Aug. 2020
• start_page: 1
• end_page: 4
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 766
• insert_date: 20200922
• index_terms:
  • ieee_terms:
    • Through-silicon vias
    • Three-dimensional displays
    • Bonding
    • Packaging
    • Reliability
    • CMOS image sensors
    • Etching
  • author_terms:
    • CMOS image sensor
    • ultra-thin
    • 3D WLCSP
    • TSV
    • temporary bonding
  • dynamic_index_terms:
    • Chemical Vapor Deposition
    • Vapor Deposition
    • Chemical Vapour Deposition
    • Chemical Deposition
    • Process Flow
    • Electroplating
    • Electrochemical Deposition
    • Plasma-enhanced Chemical Vapor Deposition
    • PECVD
    • High-density Integration
    • Layer Thickness
    • Aspect Ratio
    • Reliability Test
    • Thermal Expansion
    • Coefficient Of Thermal Expansion
    • Oxide Layer
    • Etching Process
    • Physical Vapor Deposition
    • Physical Vapour Deposition
    • Dry Etching
    • Wafer Surface
    • Oxidative Etching
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-7281-6827-2, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-7281-6826-5, isbnType: New-2005
• authors:
  • Author Name: Yao Wang
    Affiliation: College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37088512806
    ID: 37088512806
    Order: 1
    Author Affiliations:
    • College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
  • Author Name: Fei Qin
    Affiliation: College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37840357700
    ID: 37840357700
    Order: 2
    Author Affiliations:
    • College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
  • Author Name: Shuying Ma
    Affiliation: HuaTian Technology (Kunshan) Electronics Co., Ltd, China
    Author URL: https://ieeexplore.ieee.org/author/37086880080
    ID: 37086880080
    Order: 3
    Author Affiliations:
    • HuaTian Technology (Kunshan) Electronics Co., Ltd, China
  • Author Name: Jiao Wang
    Affiliation: HuaTian Technology (Kunshan) Electronics Co., Ltd, China
    Author URL: https://ieeexplore.ieee.org/author/37086440522
    ID: 37086440522
    Order: 4
    Author Affiliations:
    • HuaTian Technology (Kunshan) Electronics Co., Ltd, China
  • Author Name: Aimo Xiao
    Affiliation: HuaTian Technology (Kunshan) Electronics Co., Ltd, China
    Author URL: https://ieeexplore.ieee.org/author/37088458575
    ID: 37088458575
    Order: 5
    Author Affiliations:
    • HuaTian Technology (Kunshan) Electronics Co., Ltd, China
  • Author Name: Shuai Zhao
    Affiliation: College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37086806487
    ID: 37086806487
    Order: 6
    Author Affiliations:
    • College of Mechanical Engineering and Applied Electronics Technology, Beijing University of Technology, Beijing, China

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: not specified
• benefits: not specified

Supporting Organizations

• supported_by: National Natural Science Foundation of China No. 11672009 and National Science and Technology Major Project No. 2017ZX02519

Manuscript Details

• publication_date: 12-15 Aug. 2020

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

request_3302c46b-a00f-471b-b8c4-d1e37818013f-process_development_of_3d_wlcsp_for_ultrathin_cmos_image_sensor.json