Platinum Silicide As Electrode Material Of Microfabricated Quantum Electron Tunneling Transducers

• doi: 10.1109/EDM.2010.5568840
• title: Platinum silicide as electrode material of microfabricated quantum electron tunneling transducers
• publisher: IEEE
• isbn: 978-1-4244-6627-6
• issn: 1815-3712
• partnum: 10EX4305
• rank: 3283
• access_type: LOCKED
• content_type: Conferences
• abstract: The platinum silicide is proposed as electrode material for electrostatically controlled MEMS/NEMS, in our case - for nanoelectromechanical sensors based on quantum electron tunneling. The process flow of device fabrication is presented and reasons to use platinum silicide as metallization material are described. In this paper we also demonstrate the use of conductive atomic force micoscopy (AFM) in spreading resistance imaging mode for inspection of topography and electrical properties of platinum silicide surface. The goal of this study is to define the platinum silicide films structural and electrical properties variation after thermal processing (conventional operation in CMOS process flow) and to correct the process flow parameters as may be required. Both AFM-inspection operations of pre- and post-thermal processed test structures are performed. The experimental results are presented.
• article_number: 5568840
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5568840
• html_url: https://ieeexplore.ieee.org/document/5568840/
• abstract_url: https://ieeexplore.ieee.org/document/5568840/
• publication_title: 2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices
• conference_location: Novosibirsk, Russia
• conference_dates: 30 June-4 July 2010
• publication_number: 5512008
• is_number: 5568637
• publication_year: 2010
• publication_date: 30 June-4 July 2010
• start_page: 159
• end_page: 164
• citing_paper_count: 0
• citing_patent_count: 2
• download_count: 162
• insert_date: 20100909
• index_terms:
  • ieee_terms:
    • Heating
    • Measurement by laser beam
    • CMOS integrated circuits
    • Seminars
    • Laser modes
    • Micromechanical devices
    • Transducers
  • author_terms:
    • MEMS
    • NEMS
    • spreading resistance
    • platinum silicide
    • STM
    • AFM
  • dynamic_index_terms:
    • Electrode Materials
    • Microfabrication
    • Micromachining
    • Platinum Silicide
    • Goal Of This Study
    • Structural Properties
    • Surface Properties
    • Thermal Process
    • Process Flow
    • Conventional Operations
    • Impedance
    • Resistivity
    • Sample Surface
    • Actuator
    • Accelerometer
    • Accelerometry
    • Fabrication Process
    • Counter Electrode
    • Auxiliary Electrode
    • Magnetometer
    • Magnetometry
    • Magnetic Sensor
    • Magnetron Sputtering
    • Sputter Deposition
    • Silicon Nitride
    • Reactive Ion Etching
    • Sacrificial Layer
    • Conductive Atomic Force Microscopy
    • Conductive AFM
    • Nanoelectromechanical Systems
    • Control Circuit
    • Layer Of Platinum
    • Tunneling Current
    • Scanning Probe Microscopy
    • Wet Etching
    • CMOS Technology
    • Conductive Tip
• isbn_formats:
  • format: CD, value: 978-1-4244-6627-6, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-6626-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-6628-3, isbnType: New-2005
• authors:
  • Author Name: Nikita N. Balan
    Affiliation: Vneshtechnika FSUE, Moscow, Russia
    Author URL: https://ieeexplore.ieee.org/author/37546916100
    ID: 37546916100
    Order: 1
    Author Affiliations:
    • Vneshtechnika FSUE, Moscow, Russia
  • Author Name: Evgenii N. Ivashov
    Affiliation: Moscow State Institute of Electronics and Mathematics, Moscow, Russia
    Author URL: https://ieeexplore.ieee.org/author/37546927700
    ID: 37546927700
    Order: 2
    Author Affiliations:
    • Moscow State Institute of Electronics and Mathematics, Moscow, Russia
  • Author Name: Alexander B. Nevskii
    Affiliation: Angstrem JSC, Moscow, Russia
    Author URL: https://ieeexplore.ieee.org/author/37546926600
    ID: 37546926600
    Order: 3
    Author Affiliations:
    • Angstrem JSC, Moscow, Russia

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Not specified
• benefits: Not specified

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: 30 June-4 July 2010

Relevancy Score

• score: 1
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits
  • supported_by
  • publication_date

Processed JSON Filename

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