Plasma Doping Of High Aspect Ratio Structures

• doi: 10.1109/IIT.2014.6940003
• title: Plasma doping of high aspect ratio structures
• publisher: IEEE
• isbn: 978-1-4799-5212-0
• issn:
• rank: 3282
• access_type: LOCKED
• content_type: Conferences
• abstract: Doping high aspect ratio (HAR) structures poses a major challenge for device manufacturers, particularly in the advanced memory and CMOS image sensor technology spaces. CMOS technology scaling limitations have led to the emergence of vertically integrated cells, which leading-edge chipmakers are already introducing into mass production. Each case involves HAR structures that may require doping to improve or even enable device operation. Meanwhile, scaling is driving CMOS image sensor device challenges in pixel-to-pixel isolation, dark-current reduction, and noise reduction. This study demonstrates the capability of plasma doping as an enabling technology for doping in these challenging HAR structures. Plasma doping process flow optimization and analytical techniques, such as secondary ion mass spectroscopy (SIMS), are demonstrated.
• article_number: 6940003
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6940003
• html_url: https://ieeexplore.ieee.org/document/6940003/
• abstract_url: https://ieeexplore.ieee.org/document/6940003/
• publication_title: 2014 20th International Conference on Ion Implantation Technology (IIT)
• conference_location: Portland, OR, USA
• conference_dates: 26 June-4 July 2014
• publication_number: 6927586
• is_number: 6939760
• publication_year: 2014
• publication_date: 26 June-4 July 2014
• start_page: 1
• end_page: 4
• citing_paper_count: 7
• citing_patent_count: 0
• download_count: 682
• insert_date: 20141030
• index_terms:
  • ieee_terms:
    • Doping
    • Plasmas
    • CMOS image sensors
    • Three-dimensional displays
    • Implants
    • Radio frequency
    • Surface treatment
  • author_terms:
    • Plasma Doping
    • Ion Implantation
    • 3D NAND
    • CMOS Image Sensor
    • Deep Trench Isolation
    • Secondary Ion Mass Spectroscopy (SIMS)
  • dynamic_index_terms:
    • Aspect Ratio
    • High Aspect Ratio
    • High Aspect Ratio Structures
    • Plasma Doping
    • Denoising
    • Noise Reduction
    • Mass Production
    • Image Sensor
    • Camera Sensor
    • Secondary Ion Mass Spectrometry
    • Scalable Technology
    • Doping Process
    • Memory Technologies
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Sidewall
    • Side Walls
    • Bias Voltage
    • Innovation System
    • Innovation Ecosystem
    • Doping Concentration
    • Radiofrequency Pulse
    • Flash Memory
    • Flash Storage
    • Memory Applications
    • High Doping Concentration
    • Radio Frequency Plasma
• isbn_formats:
  • format: Electronic ISBN, value: 978-1-4799-5212-0, isbnType: New-2005
• authors:
  • Author Name: Deven Raj
    Affiliation: Varian Semiconductor Business Unit, Applied Materials, Inc., Gloucester, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085387794
    ID: 37085387794
    Order: 1
    Author Affiliations:
    • Varian Semiconductor Business Unit, Applied Materials, Inc., Gloucester, MA, USA
  • Author Name: Jun S. Lee
    Affiliation: Varian Semiconductor Business Unit, Applied Materials, Inc., Gloucester, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085391622
    ID: 37085391622
    Order: 2
    Author Affiliations:
    • Varian Semiconductor Business Unit, Applied Materials, Inc., Gloucester, MA, USA
  • Author Name: Helen Maynard
    Affiliation: Varian Semiconductor Business Unit, Applied Materials, Inc., Gloucester, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37370821500
    ID: 37370821500
    Order: 3
    Author Affiliations:
    • Varian Semiconductor Business Unit, Applied Materials, Inc., Gloucester, MA, USA
  • Author Name: Kerry Lacey
    Affiliation: Varian Semiconductor Business Unit, Applied Materials, Inc., Gloucester, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085380168
    ID: 37085380168
    Order: 4
    Author Affiliations:
    • Varian Semiconductor Business Unit, Applied Materials, Inc., Gloucester, MA, USA

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Reduced by plasma doping

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: CMOS image sensors are used in various applications such as smartphones and medical devices.
• benefits: Allows for better resolution and dark current reduction through plasma doping.

Supporting Organizations

• supported_by: Applied Materials Maydan Technology Center, Varian Applications Lab, Varian Plasma Products business unit

Manuscript Details

• publication_date: 26 June-4 July 2014

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • focal_length
  • aperture
  • field_of_view
  • distortion

Processed JSON Filename

request_32253a65-1b84-401e-b52d-2586671aaec4-plasma_doping_of_high_aspect_ratio_structures.json