Pixellevel Adc By Small Charge Quantum Counting

• doi: 10.1109/ICECS.2006.379815
• title: Pixel-level ADC by small charge quantum counting
• publisher: IEEE
• isbn: 1-4244-0395-2
• issn:
• partnum: 06EX1382
• rank: 3275
• access_type: LOCKED
• content_type: Conferences
• abstract: A pixel-level ADC technique for CMOS image sensors is presented. As the charge represents accurately the amount of illumination, the principle consists in counting small charge packets which come from the detector. Based on a 0.13 μm CMOS technology, simulation results and first measurements are presented showing that the LSB value can be reduced to 1900 electrons with a static power of 250nW per pixel. For the moment, due to the available technology, this technique, is restricted to medium size pixels, i.e. 50x50 μm2.
• article_number: 4263393
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4263393
• html_url: https://ieeexplore.ieee.org/document/4263393/
• abstract_url: https://ieeexplore.ieee.org/document/4263393/
• publication_title: 2006 13th IEEE International Conference on Electronics, Circuits and Systems
• conference_location: Nice, France
• conference_dates: 10-13 Dec. 2006
• publication_number: 4263277
• is_number: 4263278
• publication_year: 2006
• publication_date: 10-13 Dec. 2006
• start_page: 423
• end_page: 426
• citing_paper_count: 8
• citing_patent_count: 14
• download_count: 387
• insert_date: 20070702
• index_terms:
  • ieee_terms:
    • Detectors
    • Image converters
    • CMOS technology
    • Counting circuits
    • CMOS image sensors
    • Voltage
    • Trigger circuits
    • Pixel
    • Lighting
    • Linearity
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Low Values
    • Denoising
    • Noise Reduction
    • Dynamic Range
    • Integration Time
    • Photodiode
    • End Time
    • Eschatological
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Electron Hole Pairs
    • Amount Of Charge
    • Charge Quantity
    • Charge Injection
    • High Linearity
    • Power Supply Voltage
    • Differential Pair
    • Readout Electronics
    • Readout Noise
• isbn_formats:
  • format: CD, value: 1-4244-0395-2, isbnType: Historical
  • format: Print ISBN, value: 1-4244-0394-4, isbnType: Historical
• authors:
  • Author Name: A. Peizerat
    Affiliation: CEA/LETI, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37397198600
    ID: 37397198600
    Order: 1
    Author Affiliations:
    • CEA/LETI, Grenoble, France
  • Author Name: M. Arques
    Affiliation: CEA/LETI, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37688052200
    ID: 37688052200
    Order: 2
    Author Affiliations:
    • CEA/LETI, Grenoble, France
  • Author Name: P. Villard
    Affiliation: CEA/LETI, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37340124700
    ID: 37340124700
    Order: 3
    Author Affiliations:
    • CEA/LETI, Grenoble, France
  • Author Name: J-L. Martin
    Affiliation: CEA/LETI, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37089100709
    ID: 37089100709
    Order: 4
    Author Affiliations:
    • CEA/LETI, Grenoble, France
  • Author Name: G. Bouvier
    Affiliation: INPG-LIS, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/38297784500
    ID: 38297784500
    Order: 5
    Author Affiliations:
    • INPG-LIS, Grenoble, France

Image Sensor

• sensor_type: CMOS
• resolution: Medium size pixels (50x50 µm²)
• dynamic_range: 120 dB expected
• pixel_size: 50x50 µm²
• dark_current: Not specified in the paper

Optical Data

• focal_length: Not specified in the paper
• aperture: Not specified in the paper
• field_of_view: Not specified in the paper
• distortion: Not specified in the paper

Performance Metrics

• frame_rate: Not specified in the paper
• signal_to_noise_ratio: Not directly provided, but discussed in terms of readout and detector noise
• sensitivity: Not specified in the paper
• shutter_speed: Not specified in the paper
• power_consumption: 250 nW static power per pixel, 1.4 µW at I_DET_MAX
• noise: 5400 electrons at I_DET of 5 nA, 170 electrons at I_DET of 5 pA

Applications & Benefits

• cell_imaging: CMOS image sensors are used in applications such as smartphones, medical devices, and automotive systems.
• benefits: Integration of ADC in CMOS image sensors reduces power and noise, while enhancing performance.

Supporting Organizations

• supported_by: CEA/LETI, INPG/LIS

Manuscript Details

• publication_date: 10-13 Dec. 2006

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed

Processed JSON Filename

request_b97bf80d-5cd1-4634-a533-bb9c11ae1d7d-pixellevel_adc_by_small_charge_quantum_counting.json