Pixel Design Of Ultrahigh Speed Cmos Image Sensor

• doi: 10.1109/ASICON52560.2021.9620252
• title: Pixel Design of Ultra-high Speed CMOS Image Sensor
• publisher: IEEE
• isbn: 978-1-6654-1149-3
• issn: 2162-7541
• rank: 3263
• access_type: LOCKED
• content_type: Conferences
• abstract: Ultra-high-speed (UHS) image sensors with time resolution from nano-second to micro-second are widely applied to research phenomena such as electric discharge, explosives, materials fracture. To realize UHS CMOS pixels with high time resolution and imaging quality, the photoelectrons in large pinned photo diode (PPD) must be transferred at very high velocity. This paper firstly presents an overview of two types of UHS CMOS pixels with multiple floating diffusion (MFD) or single floating diffusion (SFD). Then, two design examples with SFD at the edge/center of the photo-diode (PD) are also introduced to show the design of UHS CMOS pixel with large PPD.
• article_number: 9620252
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9620252
• html_url: https://ieeexplore.ieee.org/document/9620252/
• abstract_url: https://ieeexplore.ieee.org/document/9620252/
• publication_title: 2021 IEEE 14th International Conference on ASIC (ASICON)
• conference_location: Kunming, China
• conference_dates: 26-29 Oct. 2021
• publication_number: 9620208
• is_number: 9620199
• publication_year: 2021
• publication_date: 26-29 Oct. 2021
• start_page: 1
• end_page: 4
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 401
• insert_date: 20211201
• index_terms:
  • ieee_terms:
    • Partial discharges
    • Image resolution
    • Image edge detection
    • Conferences
    • CMOS image sensors
    • Explosives
    • Discharges (electric)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Sensor Design
    • Photoelectron
    • Photoelectric
    • Explosive
    • Photodiode
    • High Velocity
    • Time Resolution
    • Electrical Discharge
    • High Time Resolution
    • Material Fracture
    • Types Of Pixels
    • PIN Photodiode
    • Large Capacity
    • Large Capacitance
    • CMOS Process
    • Complete Transfer
    • Lateral Field
    • Lateral Profile
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-6654-1149-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-6654-3867-4, isbnType: New-2005
• authors:
  • Author Name: Peng Feng
    Affiliation: Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37530367800
    ID: 37530367800
    Order: 1
    Author Affiliations:
    • Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, China
    • Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • Author Name: Liyuan Liu
    Affiliation: Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37085745851
    ID: 37085745851
    Order: 2
    Author Affiliations:
    • Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, China
    • Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • Author Name: Nanjian Wu
    Affiliation: Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, China
    Author URL: https://ieeexplore.ieee.org/author/37286754000
    ID: 37286754000
    Order: 3
    Author Affiliations:
    • Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, China
    • Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
    • Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Beijing, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 22.4×22.4 μm, 32×32 μm, 10×10 μm, 14×14 μm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: above 1Mfps

Applications & Benefits

• cell_imaging: UHS phenomena such as electric discharge, explosives, combustion, materials fracture
• benefits: Lower cost and lower power consumption relative to CCDs, integration of mixed-signal circuits within a single chip

Supporting Organizations

• supported_by: National Key Research and Development Program of China under Grant 2019YFB2204300

Manuscript Details

• publication_date: 26-29 Oct. 2021

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • noise
  • dark_current
  • sensitivity
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_320a494f-f803-4955-a1bb-65b3eeab904d-pixel_design_of_ultrahigh_speed_cmos_image_sensor.json