Physical Effects Of Avalanche Cmos Photodiodes

• doi:
• title: Physical effects of avalanche CMOS photodiodes
• publisher: IEEE
• isbn: 978-4-88552-246-8
• issn: 2166-8892
• partnum: 10EX4341
• rank: 3255
• access_type: LOCKED
• content_type: Conferences
• abstract: Three photodiodes of P-diffusion_N-well_P-substrate, N-well_P-substrate, N-diffusion_P-substrate photodiodes using the TSMC 0.35μm CMOS technology are implemented to understand their breakdown voltages at the Geiger mode. The measured results reveal that a photodiode with a larger perimeter yields a lower breakdown voltage. N-well_P-substrate and N-diffusion_P-substrate photodiodes have the largest breakdown voltage and the best current gain, respectively. Particularly, the electrical fields associated with photodiode's structures are theoretically derived to support the measured results. The results from our experiments can be beneficial to the photodiode design of a 3D image sensor.
• article_number: 5588004
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5588004
• html_url: https://ieeexplore.ieee.org/document/5588004/
• abstract_url: https://ieeexplore.ieee.org/document/5588004/
• publication_title: OECC 2010 Technical Digest
• conference_location: Sapporo, Japan
• conference_dates: 5-9 July 2010
• publication_number: 5577382
• is_number: 5587915
• publication_year: 2010
• publication_date: 5-9 July 2010
• start_page: 824
• end_page: 825
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 157
• insert_date: 20100930
• index_terms:
  • ieee_terms:
    • Photodiodes
    • CMOS technology
    • CMOS integrated circuits
    • P-n junctions
    • Breakdown voltage
    • Dark current
  • dynamic_index_terms:
    • Photodiode
    • 3D Sensor
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • P-n Junction
• isbn_formats:
  • format: CD, value: 978-4-88552-246-8, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-6785-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-4-88552-246-8, isbnType: New-2005
• authors:
  • Author Name: Chieh Ning Chan
    Affiliation: Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37539379500
    ID: 37539379500
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
  • Author Name: Oscal T.-C. Chen
    Affiliation: Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37271445000
    ID: 37271445000
    Order: 2
    Author Affiliations:
    • Department of Electrical Engineering, National Chung Cheng University, Chiayi, Taiwan

Image Sensor

• sensor_type: CMOS
• resolution: 30um x 30um
• dynamic_range: Not specified
• pixel_size: 30um
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Used for 3D image sensor applications.
• benefits: Improved breakdown voltage and current gain in photodiodes.

Supporting Organizations

• supported_by: National Science Council, Taiwan

Manuscript Details

• publication_date: 5-9 July 2010

Relevancy Score

• score: 8
• missing_fields:
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_eafe897b-5263-48ee-a1a2-9d35b82cf6e3-physical_effects_of_avalanche_cmos_photodiodes.json