Performance And Spatial Sensitivity Variations Of Singlephoton Avalanche
Diodes Manufactured In An Image Sensor Cmos Process
- doi: 10.1109/LED.2015.2475168
-
title: Performance and Spatial Sensitivity Variations
of Single-Photon Avalanche Diodes Manufactured in an Image Sensor CMOS
Process
- publisher: IEEE
- isbn:
- issn: 1558-0563
- rank: 3235
- access_type: LOCKED
- content_type: Journals
-
abstract: In this letter, we present the results from a
series of single-photon avalanche diode (SPAD) structures implemented in
a commercial 0.18-μm CMOS process intended for CMOS image sensors.
Variations without any effect on the performance and variations that
produced non-functional devices are described. Devices based on the
p+/n-well and deep-n-well/p-doped epitaxial (P-EPI) SPADs' junctions
were found to work well in this process. When biased for 10% quantum
efficiency, the best 10-μm diameter p+/n-well SPADs exhibited a dark
count rate (DCR) of ~1 kHz, whereas the DCR of the deep-n-well/ P-EPI
SPADs was only 10 Hz under the same conditions. We also show that the
former type exhibited local sensitivity variations within the SPADs
ranging from a factor 4 at low excess voltage to 1.2 at an excess
voltage of ~0.5 V. No significant sensitivity variations were found for
the deep-n-well/P-EPI SPADs, but they were found to exhibit a
significant sensitivity outside the central junction, contributing from
8.3% at low excess voltage to ~70% at high excess voltage.
- article_number: 7230234
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7230234
-
html_url:
https://ieeexplore.ieee.org/document/7230234/
-
abstract_url:
https://ieeexplore.ieee.org/document/7230234/
- publication_title: IEEE Electron Device Letters
- conference_location:
- conference_dates:
- publication_number: 55
- is_number: 7302615
- publication_year: 2015
- publication_date: Nov. 2015
- start_page: 1118
- end_page: 1120
- citing_paper_count: 6
- citing_patent_count: 0
- download_count: 553
- insert_date: 20150831
-
index_terms:
-
ieee_terms:
- Sensitivity
- Photonics
- Junctions
- Performance evaluation
- CMOS process
- Geometry
-
author_terms:
- Avalanche photodiodes
- Photodiodes
- CMOS integrated circuits
- Avalanche photodiodes
- photodiodes
- CMOS integrated circuits
-
dynamic_index_terms:
- Spatial Variation
- Variation In Sensitivity
- Image Sensor
- Camera Sensor
- CMOS Process
- Avalanche Diode
- Single-photon Avalanche Diode
- Factor 4
- Quantum Efficiency
- Dark Count Rate
- Electrode
- Central Region
- Device Performance
- Short Wavelength
- Shorter Wavelengths
- Focal Plane
- Back Focal Plane
- Spatial Measures
- polySia
- Polycrystalline Silicon
- Polysilicon
- Sensitivity To Light
- Sun Sensitivity
-
authors:
-
Author Name: Johan Borg
Affiliation: Department of Computer Science, Luleå
University of Technology, Luleå, Sweden
Author URL:
https://ieeexplore.ieee.org/author/37298257700
ID: 37298257700
Order: 1
Author Affiliations:
-
Department of Computer Science, Luleå University of Technology,
Luleå, Sweden
Image Sensor
- sensor_type: CMOS
- resolution: Not specified
- dynamic_range: Not specified
- pixel_size: 10 µm (for P+/n-well SPAD devices)
-
dark_current: 1 kHz (P+/n-well), 10 Hz (DNWELL/P-EPI
devices)
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: Applications in time-of-flight distance
measurements and time-resolved imaging.
-
benefits: Integration of SPADs with support circuitry
(e.g., time to digital converters) to simplify implementation of 2D
detector arrays.
Supporting Organizations
-
supported_by: Fraunhofer Institute of Integrated
Circuits
Manuscript Details
- publication_date: Nov. 2015
Relevancy Score
- score: 9
-
missing_fields:
- resolution
- dynamic_range
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
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